Electronic devices and methods of manufacturing electronic devices
In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.
1 . An electronic device, comprising:
a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, wherein a topmost side of the upper dielectric layer defines a topmost side of the dielectric structure;
an electronic component over a top side of the substrate and coupled with the conductive structure;
an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component; and
a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate;
wherein the conductive structure comprises a first tab structure at the first lateral side of the substrate, wherein the first tab structure contacts the shield, wherein a topmost side of the first tab structure extends above the topmost side of the upper dielectric layer, and wherein the first tab structure extends to at least a bottommost side of the upper dielectric layer.
2 . The electronic device of claim 1 , wherein the first tab structure comprises:
a first upper tab over the upper dielectric layer;
a first lower tab under the upper dielectric layer; and
a first tab via coupled with the first upper tab and the first lower tab and extending through the upper dielectric layer.
3 . The electronic device of claim 2 , wherein:
the first upper tab and the first lower tab contact the shield; and
the upper dielectric layer is between the first tab via and the shield.
4 . The electronic device of claim 2 , wherein:
the first upper tab, the first lower tab, and the first tab via contact the shield at the first lateral side of the substrate.
5 . The electronic device of claim 2 , wherein:
the conductive structure comprises a second tab structure at a second lateral side of the substrate, the second tab structure contacting the shield and extending above the upper dielectric layer.
6 . The electronic device of claim 2 , wherein the first tab structure comprises:
a plurality of upper tabs located above the upper dielectric layer and including the first upper tab;
a plurality of lower tabs located below the upper dielectric layer and including the first lower tab; and
a plurality of tab vias located through the upper dielectric layer and including the first tab via, wherein each tab via of the plurality of tab vias is coupled between a respective one of the plurality of upper tabs and a respective one of the plurality of lower tabs.
7 . The electronic device of claim 6 , wherein:
the encapsulant is between a first one of the plurality of upper tabs and a second one of the plurality of upper tabs; and
the encapsulant contacts a lateral side of the first one of the plurality of upper tabs and a lateral side of the second one of the plurality of upper tabs.
8 . The electronic device of claim 2 , wherein the first tab structure comprises:
a plurality of upper tabs located above the upper dielectric layer and including the first upper tab; and
a plurality of tab vias located through the upper dielectric layer and including the first tab via, wherein each tab via of the plurality of tab vias is coupled between a respective one of the plurality of upper tabs and the first lower tab.
9 . The electronic device of claim 8 , wherein:
the encapsulant is between a first one of the plurality of upper tabs and a second one of the plurality of upper tabs; and
the encapsulant contacts a lateral side of the first one of the plurality of upper tabs and a lateral side of the second one of the plurality of upper tabs.
10 . An electronic device, comprising:
a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, wherein a topmost side of the upper dielectric layer defines a topmost side of the dielectric structure;
an electronic component over a top side of the substrate and coupled with the conductive structure;
an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component; and
a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate;
wherein the conductive structure comprises a first tab structure at the first lateral side of the substrate, wherein the first tab structure contacts the shield, wherein a topmost side of the first tab structure is below the topmost side of the upper dielectric layer, and wherein the first tab structure extends to at least a bottommost side of the upper dielectric layer.
11 . The electronic device of claim 10 , wherein:
the first tab structure extends continuously across the first lateral side of the substrate.
12 . The electronic device of claim 10 , wherein:
the first tab structure comprises a plurality of spaced apart tabs; and
the dielectric structure is between a first one of the plurality of spaced apart tabs and a second one of the plurality of spaced apart tabs.
13 . The electronic device of claim 10 , wherein:
a first portion of an upper side of the first tab structure is exposed from the upper dielectric layer; and
the upper dielectric layer is over a second portion of the first tab structure.
14 . The electronic device of claim 10 , wherein:
the encapsulant comprises a skirt portion over a top side of the first tab structure and contacting a lateral side of the upper dielectric layer.
15 . The electronic device of claim 10 , wherein:
the first tab structure comprises a plurality of spaced apart tabs;
the encapsulant comprises a skirt portion over a top side of the plurality of spaced apart tabs; and
the skirt portion extends between a first one of the plurality of spaced apart tabs and a second one of the plurality of spaced apart tabs.
16 . A method to manufacture an electronic device, comprising:
providing a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, wherein a topmost side of the upper dielectric layer defines a topmost side of the dielectric structure;
providing an electronic component over a top side of the substrate and coupled with the conductive structure;
providing an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component; and
providing a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate;
wherein the conductive structure comprises a first tab structure at the first lateral side of the substrate, wherein the first tab structure contacts the shield, wherein a topmost side of the first tab structure extends above the topmost side of the upper dielectric layer, and wherein the first tab structure extends to at least a bottommost side of the upper dielectric layer.
17 . The method of claim 16 , wherein the first tab structure comprises:
a first upper tab over the upper dielectric layer;
a first lower tab under the upper dielectric layer; and
a first tab via coupled with the first upper tab and the first lower tab and extending through the upper dielectric layer.
18 . The method of claim 17 , wherein:
the first upper tab and the first lower tab contact the shield; and
the upper dielectric layer is between the first tab via and the shield.
19 . The method of claim 17 , wherein:
the first upper tab, the first lower tab, and the first tab via contact the shield at the first lateral side of the substrate.
20 . The method of claim 17 , wherein:
the conductive structure comprises a second tab structure at a second lateral side of the substrate, the second tab structure contacting the shield and extending above the upper dielectric layer.