Sot-driven field-free switching MRAM and array thereof
An SOT-driven field-free switching MRAM and an array thereof. From top to bottom, the SOT-MRAM sequentially includes: a selector ( 1 ) configured to turn on or turn off the SOT-MRAM under an action of an external voltage; a magnetic tunnel junction ( 2 ), including a ferromagnetic reference layer, a tunneling layer and a ferromagnetic free layer arranged sequentially from top to bottom; and a spin-orbit coupling layer ( 3 ) made of one or more selected from heavy metal, doped heavy metal, heavy metal alloy, metal oxide, dual heavy metal layers, semiconductor material, two-dimensional semi-metal material and anti-ferromagnetic material. The spin-orbit coupling layer is configured to generate an in-plane effective field in the ferromagnetic free layer by using the interlayer exchange coupling effect and generate spin-orbit torques by using the spin Hall effect, so as to perform a deterministic data storage in the magnetic tunnel junction ( 2 ).
1 . An SOT-driven field-free switching MRAM, wherein from top to bottom, the SOT-MRAM sequentially comprises:
a selector configured to turn on or turn off the SOT-MRAM under an action of an external voltage;
a magnetic tunnel junction, comprising a ferromagnetic reference layer, a tunneling layer and a ferromagnetic free layer arranged sequentially from top to bottom; and
a spin-orbit coupling layer made of one or more selected from heavy metal, doped heavy metal, heavy metal alloy, metal oxide, dual heavy metal layers, semiconductor material, two-dimensional semi-metal material and anti-ferromagnetic material, wherein the spin-orbit coupling layer is configured to generate an in-plane effective field in the ferromagnetic free layer by using the interlayer exchange coupling effect and generate spin-orbit torques by using the spin Hall effect, so as to perform a deterministic data storage in the magnetic tunnel junction,
wherein the selector is a metal-semiconductor-metal structure made of a two-dimensional van der Waals material, and the external voltage is an external forward voltage or an external reverse voltage.
2 . The SOT-driven field-free switching MRAM according to claim 1 , wherein a magnetization direction of a magnetic material in the ferromagnetic free layer is perpendicular to a plane where the ferromagnetic material is located.
3 . The SOT-driven field-free switching MRAM according to claim 1 , wherein the two-dimensional van der Waals material is WS 2 or WSe 2 .
4 . The SOT-driven field-free switching MRAM according to claim 1 , wherein the ferromagnetic reference layer and the ferromagnetic free layer are made of CoFeB, Co or NiFe.
5 . The SOT-driven field-free switching MRAM according to claim 1 , wherein the tunneling layer is made of MgO.
6 . The SOT-driven field-free switching MRAM according to claim 1 , wherein in the spin-orbit coupling layer, the heavy metal is made of one or more of Pt, Pd, Hf, β-Ta and β-W; the heavy metal alloy is made of one or more of Pt 80 Al 20 , Pt 85 Hf 15 and Pt 75 Au 25 ; the metal oxide comprises one or more of W 88 O 12 and PtO 2 ; the anti-ferromagnetic material is made of one or more of PtMn, FeMn, PdMn and IrMn; the semiconductor material is (Ga, Mn) As; and the two-dimensional semi-metal material is made of one or more of WTe 2 , MoTe 2 and PtTe 2 .
7 . The SOT-driven field-free switching MRAM according to claim 1 , wherein the SOT-MRAM further comprises:
a bit line located above the selector, wherein the bit line is configured to output the data stored in the SOT-MRAM.
8 . An array formed by the SOT-driven field-free switching MRAMs according to claim 1 , wherein the array is an array structure of M rows, N columns and K layers comprising M×N×K SOT-MRAMs, and spin-orbit coupling layers of each row of SOT-MRAMs are connected to a corresponding common word line, where M, N and K are positive integers.
9 . The array according to claim 8 , wherein the array is the three-dimensional array when K is greater than 1, in two adjacent layers of SOT-MRAMs, a bit line in a bottom layer of SOT-MRAMs and the common word line in a top layer of SOT-MRAMs cross at an interval.