Multiturn counter using magnetic domain wall conductors wound in the manner of closed loops
In a revolution counter using magnetic domain wall conductors which are wound each as a loop in a form of a spiral configured to be closed, in the connecting region the inner and outer loop section ends of the loop of a first magnetic domain wall conductor are combined and bridged by a second magnetic domain wall conductor which is connected to the magnetic domain wall conductor ends of the spiral with a respective gap therebetween, wherein the gap creates a local interruption of the domain wall conductor, and wherein the mean width of the gap is set to be smaller than the thickness of the domain wall conductors, and the adjoining domain conductor sections are encompassed by a non-magnetic layer in the gap region.
1 . Revolution counter, comprising magnetic domain wall conductors which are wound each as a loop in a form of a spiral configured to be closed and are situated essentially in a plane, wherein in a connecting region inner and outer loop section ends of the loop of a first magnetic domain wall conductor are combined and bridged by a second magnetic domain wall conductor which is connected to the inner and outer loop section ends of the loop of the first magnetic domain wall conductor with a gap therebetween, the gap creating a local interruption of the first magnetic domain wall conductor, the gap being provided with such a width that, during a movement of a domain wall of a first domain conductor section of either the first or the second magnetic domain wall conductor, a stray field is generated therein and, in a direction the movement, downstream from the gap, results in nucleation of a domain wall in a subsequent domain conductor section, a mean width of the gap being set to be less than a thickness of the magnetic domain wall conductors and adjoining domain conductor sections of the first and second magnetic domain wall conductors being encompassed by a non- magnetic layer in a region of the gap.
2 . The revolution counter according to claim 1 , wherein the first and second magnetic domain wall conductors are horizontally or vertically offset with respect to one another by less than 25% of the thickness or a width of the first magnetic domain wall conductor.
3 . The revolution counter according to claim 1 , wherein end faces of the first and second magnetic domain wall conductors forming the gap are disposed parallel to one another or obliquely in an angular range of 25° to 90°.
4 . The revolution counter according to claim 2 , wherein end faces of the first and second magnetic domain wall conductors forming the gap are disposed parallel to one another or obliquely in an angular range of 25° to 90°.
5 . The revolution counter according to claim 1 , wherein the first and second magnetic domain wall conductors are each comprised of a soft magnetic material having a saturation magnetization differing from the saturation magnetization of the other domain wall conductor by less than 40%.
6 . The revolution counter according to claim 1 , wherein the product (cross-section · saturation magnetization) of respective regions of the first and second magnetic domain wall conductors comprised of the respective soft magnetic materials differ by <25%.
7 . The revolution counter according to claim 1 , wherein the non-magnetic layer is made of a diamagnetic, paramagnetic, or antiferromagnetic material.
8 . The revolution counter according to claim 1 , wherein respective regions of the first and second magnetic domain wall conductors are comprised of respective soft magnetic materials differing in saturation magnetization and the product (cross-section · saturation magnetization) of the respective regions of the first and second magnetic domain wall conductors differ by <25%.