IP Library Granted Patent US 12,523,769
Granted Patent B2
US 12,523,769 · App. 17/627,962 · Granted Jan 13, 2026

Ranging sensor, method for driving the same, and ranging module

Inventors: Yohtaro Yasu (Kanagawa, JP); Jayesh Hannurkar (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
G01S17/36G01S7/4914G01S7/4915
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,523,769
App. No.
17/627,962
Granted
Jan 13, 2026
Kind
B2
Abstract

Ranging sensors with reduced cyclic errors and drive current dispersion are disclosed. In one example, a ranging sensor includes a phase shift circuit that generates a phase-shifted drive pulse signal by shifting a drive pulse signal to a plurality of phases in a time division manner within one frame period, with the drive pulse signal being generated in response to a light emission control signal indicating an irradiation timing of a light emission source. A pixel accumulates electric charges on the basis of the phase-shifted drive pulse signal and outputs a detection signal corresponding to the accumulated electric charges, with the electric charges being obtained by photoelectrically converting reflected light by a predetermined object. The technology can be applied to a ranging module or the like that measures a distance to a predetermined object, for example.

Claims (37)

1 . A ranging sensor comprising:

a pixel array including pixels two-dimensionally arranged in a matrix, wherein the pixels respectively include:

a photoelectric conversion portion that photoelectrically converts reflected light,

a first charge storage portion that accumulates electric charges on a basis of a phase-shifted drive pulse signal, and

a second charge storage portion that accumulates the electric charges on a basis of a signal obtained by reversing a phase with respect to the phase-shifted drive pulse signal;

a phase shift circuit that generates the phase-shifted drive pulse signal by shifting a drive pulse signal to at least three phases in a time division manner within one frame period, the drive pulse signal being generated in response to a light emission control signal indicating an irradiation timing of a light emission source; and

wherein the pixels respectively accumulate the electric charges on a basis of the phase-shifted drive pulse signal and output a detection signal corresponding to the accumulated electric charges, the electric charges being obtained by photoelectrically converting reflected light that is reflected by a target object reflecting light emitted from the light emission source.

2 . The ranging sensor according to claim 1 , wherein the phase shift circuit shifts the drive pulse signal to a first phase at a first timing within one frame period, and shifts the drive pulse signal to a second phase at a second timing.

3 . The ranging sensor according to claim 2 , wherein a first period during which the phase-shifted drive pulse signal shifted to the first phase is generated differs from a second period during which the phase-shifted drive pulse signal shifted to the second phase is generated.

4 . The ranging sensor according to claim 1 , wherein

the phase shift circuit is one of at least two phase shift circuits, including a first phase shift circuit and a second phase shift circuit,

wherein the first phase shift circuit generates the phase-shifted drive pulse signal to be supplied to a respective pixel in a first region of the pixel array, and

the second phase shift circuit generates the phase-shifted drive pulse signal to be supplied to the respective pixel in a second region different from the first region of the pixel array.

5 . The ranging sensor according to claim 4 , wherein a phase to be shifted by the first phase shift circuit and a phase to be shifted by the second phase shift circuit differ from each other at least during part of one frame period.

6 . The ranging sensor according to claim 4 , wherein a phase to be shifted by the first phase shift circuit and a phase to be shifted by the second phase shift circuit differ from each other during one entire frame period.

7 . The ranging sensor according to claim 4 , wherein each of the first region and the second region includes at least one pixel column.

8 . The ranging sensor according to claim 4 , wherein each of the first region and the second region includes a plurality of pixel columns.

9 . The ranging sensor according to claim 4 , wherein the first region and the second region are located to divide the pixel array in a vertical direction.

10 . The ranging sensor according to claim 4 , wherein the first region and the second region are arranged in a checkered pattern.

11 . The ranging sensor according to claim 4 , wherein a phase to be shifted by the first phase shift circuit and a phase to be shifted by the second phase shift circuit are in an orthogonal relation.

12 . The ranging sensor according to claim 1 , further comprising a pulse generation circuit that generates the drive pulse signal on a basis of the light emission control signal, and supplies the drive pulse signal to the phase shift circuit.

13 . The ranging sensor according to claim 1 , further comprising a control circuit that controls a timing at which the phase shift circuit changes a phase of the phase-shifted drive pulse signal.

14 . The ranging sensor according to claim 1 , further comprising

a light emission control unit that generates the light emission control signal, and supplies the light emission control signal to the light emission source.

15 . The ranging sensor according to claim 1 , which is formed with one chip in which a plurality of dies is stacked.

16 . A ranging module comprising:

a light emission source that emits light onto a target object at an irradiation timing based on a light emission control signal; and

a ranging sensor that receives reflected light that is reflected by the target object reflecting the light emitted from the light emission source,

wherein the ranging sensor includes:

a pixel array including pixels two-dimensionally arranged in a matrix, wherein the pixels respectively include:

a photoelectric conversion portion that photoelectrically converts reflected light,

a first charge storage portion that accumulates electric charges on a basis of a phase-shifted drive pulse signal, and

a second charge storage portion that accumulates the electric charges on a basis of a signal obtained by reversing a phase with respect to the phase-shifted drive pulse signal;

a phase shift circuit that generates the phase-shifted drive pulse signal by shifting a drive pulse signal to at least three phases in a time division manner within one frame period, the drive pulse signal being generated in response to a light emission control signal indicating an irradiation timing of the light emission source; and

wherein the pixels respectively accumulate electric charges on a basis of the phase-shifted drive pulse signal and output a detection signal corresponding to the accumulated electric charges, the electric charges being obtained by photoelectrically converting the reflected light.

17 . The ranging module according to claim 16 , wherein the phase shift circuit shifts the drive pulse signal to a first phase at a first timing within one frame period, and shifts the drive pulse signal to a second phase at a second timing.

18 . The ranging module according to claim 17 , wherein a first period during which the phase-shifted drive pulse signal shifted to the first phase is generated differs from a second period during which the phase-shifted drive pulse signal shifted to the second phase is generated.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2022
From: YASU, YOHTARO; HANNURKAR, JAYESH
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 058679/0102 →
Priority Claims (1)
JP 2019-157074 · Aug 29, 2019 · national
Continuity (1)
Related Publication 20220252727A1 · Aug 11, 2022
References Cited (19)
US 20050156121A1 · Bamji · 2005 [cited by applicant]
US 20090045359A1 · Kumahara · 2009 [cited by applicant]
US 20140218570A1 · Payne · 2014 [cited by applicant]
US 20150156121A1 · Yang · 2015 [cited by applicant]
US 20170315238A1 · Nagai · 2017 [cited by examiner]
US 20180052231A1 · Cho et al. · 2018 [cited by applicant]
US 20190208150A1 · Jin · 2019 [cited by examiner]
US 20190293792A1 · Keel · 2019 [cited by examiner]
CN 1601753A · 2005 [cited by applicant]
CN 109543560A · 2019 [cited by applicant]
CN 109994494A · 2019 [cited by applicant]
JP 2009085707A · 2009 [cited by applicant]
TW I276351B · 2007 [cited by applicant]
WO 2009051499A1 · 2009 [cited by applicant]
WO 2017121820A1 · 2017 [cited by applicant]
WO 2017145450A1 · 2017 [cited by applicant]
International Search Report (PCT/ISA/210), International Application No. PCT/JP2020/026700, dated Jul. 31, 2020. [cited by applicant]
Cyrus S Bamji,et al., 5.8 1Mpixel 65nm BSI 320MHz Demodulated TOF Image Sensor with 3.5um Global Shutter Pixels and Analog Binning, Microsoft Corp., 2018 IEEE International Solid-State Circuits Conference Session 5 / Im… [cited by applicant]
Min-Sun Keel,et al., A 640×480 Indirect Time-of-Flight CMOS Image Sensor with 4-tap 7-μm Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation Scheme, Samsung Electronics Co., Ltd.,2019 Symposium on VLSI … [cited by applicant]