Adaptive method to efficiently read out retention degraded NAND data

1 . A method of operating a computing device with a solid state drive (SSD), the method comprising:

obtaining a preexisting read retry table that includes a sequential list of voltage index sets for reading a flash memory of the SSD;

determining an aging parameter of the SSD;

identifying a retry voltage index set from the sequential list based on the aging parameter;

reading the flash memory using the retry voltage index set; and

generating a first retry pattern including a plurality of voltage index sets from the sequential list,

wherein a first sequential entry of the first retry pattern is the retry voltage index set, and

wherein reading the flash memory uses sequential entries of the first retry pattern, starting with the retry voltage index set.

2 . The method of claim 1 , further comprising:

determining a number program/erase (P/E) cycles of the flash memory,

wherein the aging parameter is based on the number program/erase (P/E) cycles of the flash memory.

3 . The method of claim 2 ,

wherein the number of P/E cycles is determined based on a page or a block of the flash memory or a flash memory cell of the flash memory.

4 . The method of claim 1 , further comprising:

determining an elapsed time from an enablement of the SSD,

wherein the aging parameter is based on the elapsed time at the SSD, the flash memory, a page or a block of the flash memory, or a flash memory cell of the flash memory.

5 . The method of claim 4 , further comprising:

obtaining, from a basic input/output system of the computing device, a Non-Volatile Memory Express timestamp; and

calculating the elapsed time.

6 . The method of claim 1 , further comprising:

determining a temperature of the SSD from a sensor,

wherein the aging parameter is based on the temperature.

7 . The method of claim 1 ,

wherein each entry of the first retry pattern is based on a different aging parameter of the SSD.

8 . The method of claim 7 ,

wherein the first sequential entry of the first retry pattern is selected based on a number program/erase (P/E) cycles of the flash memory.

9 . The method of claim 8 ,

wherein a second sequential entry of the first retry pattern is selected based on a temperature of the SSD.

10 . The method of claim 8 ,

wherein a second sequential entry of the first retry pattern is selected based on an elapsed time from enablement of the SSD.

11 . The method of claim 1 , further comprising:

generating a predetermined number of retry patterns, including the first retry pattern,

wherein each retry pattern includes a plurality of voltage index sets from the sequential list,

wherein reading the flash memory sequentially uses the predetermined number of retry patterns, starting with the first retry pattern.

12 . The method of claim 1 ,

wherein the first retry pattern is generated in response to execution of a predetermined process of the computing device.

13 . The method of claim 12 ,

wherein the predetermined process is bootup of the computing device.

14 . A non-transitory computer readable medium (CRM) storing computer readable program code for operating a computing device with a solid state drive (SSD), the computer readable program code causes the computing device to:

obtain a preexisting read retry table that includes a sequential list of voltage index sets for reading a flash memory of the SSD;

determine an aging parameter of the SSD;

identify a retry voltage index set from the sequential list based on the aging parameter;

read the flash memory using the retry voltage index set; and

generate a first retry pattern including a plurality of voltage index sets from the sequential list,

wherein a first sequential entry of the first retry pattern is the retry voltage index set, and

wherein reading the flash memory uses sequential entries of the first retry pattern, starting with the retry voltage index set.

15 . A computing device comprising:

a solid state drive (SSD) including a flash memory; and

a processor configured to read the flash memory,

wherein the processor is configured to:

obtain a preexisting read retry table that includes a sequential list of voltage index sets for reading the flash memory;

determine an aging parameter of the SSD;

identify a retry voltage index set from the sequential list based on the aging parameter;

read the flash memory using the retry voltage index set; and

generate a first retry pattern including a plurality of voltage index sets from the sequential list,

wherein a first sequential entry of the first retry pattern is the retry voltage index set, and

wherein reading the flash memory uses sequential entries of the first retry pattern, starting with the retry voltage index set.