Mask for X-ray lithography and metrology
A mask apparatus for x-ray lithography and metrology where the x-ray absorber material is embedded in diamond and then covered with a thermally conductive material to provide requisite thermal conductivity when irradiated with x-rays. The apparatus then includes a hollow holder that is thermally interfaced with the mask and may also include means for external thermal control. The mask apparatus allows for transmission of x-rays from a lithography beam as well as metrology beams of other wavelengths including UV, IR, visible, and others.
1 . A mask for X-ray lithography and metrology, comprising:
a substrate composed of diamond material;
a patterned membrane composed of diamond material;
an x-ray absorber layer embedded into the patterned membrane; and
at least one capping layer covering a surface of the x-ray absorber layer and the patterned membrane.
2 . The mask of claim 1 , wherein a thickness of the patterned membrane is greater than 0.05 micrometers and less than 5 micrometers.
3 . The mask of claim 1 , wherein patterns in the patterned membrane have a single binary depth.
4 . The mask of claim 1 , wherein patterns in the patterned membrane have multiple binary depths.
5 . The mask of claim 1 , wherein patterns in the patterned membrane have grayscaled depths.
6 . The mask of claim 1 , wherein the x-ray absorber layer is selected from the group consisting of tungsten, copper, gold, platinum, iridium, lead, tantalum, hafnium, hafnium oxide, tin, silver, palladium, ruthenium, molybdenum, niobium, germanium, zinc, nickel, cobalt, iron, chromium, titanium, titanium nitride, vanadium, scandium, silicon, silicon carbide, silicon dioxide, silicon nitride, aluminum, aluminum oxide, and aluminum nitride.
7 . The mask of claim 1 , wherein the x-ray absorber layer comprises a combination of materials selected from the group consisting of tungsten, copper, gold, platinum, iridium, lead, tantalum, hafnium, hafnium oxide, tin, silver, palladium, ruthenium, molybdenum, niobium, germanium, zinc, nickel, cobalt, iron, chromium, titanium, titanium nitride, vanadium, scandium, silicon, silicon carbide, silicon dioxide, silicon nitride, aluminum, aluminum oxide, and aluminum nitride.
8 . The mask of claim 1 , wherein the x-ray absorber layer fills the patterned membrane uniformly.
9 . The mask of claim 1 , wherein the x-ray absorber layer conformally coats sides of the patterned membrane.
10 . The mask of claim 1 , wherein the at least one capping layer is selected from the group consisting of diamond-like carbon, single crystalline diamond, polycrystalline diamond, nano-crystalline diamond, diamond glassy carbon, graphite, graphene, metal, and metal oxides.
11 . The mask of claim 1 , wherein the at least one capping layer comprises a combination of materials selected from the group consisting of diamond-like carbon, single crystalline diamond, polycrystalline diamond, nano-crystalline diamond, diamond glassy carbon, graphite, graphene, metal, and metal oxides.
12 . The mask of claim 1 , further comprising a mounting structure that is adhered to the mask with a thermally conductive material and with active cooling apparatus to control a temperature of the mask.
13 . The mask and mounting structure of claim 12 , wherein the mounting structure is hollow to allow metrology beams to probe the mask from either direction, the metrology beams comprising one or more of infrared, visible, ultraviolet or x-ray wavelengths.