Granted Patent B2

US 12,535,701 · App. 19/017,010 · Granted Jan 27, 2026

Inventors: Satohiro Okamoto (Kanagawa, JP); Yasuyuki Arai (Kanagawa, JP); Ikuko Kawamata (Kanagawa, JP); Atsushi Miyaguchi (Kanagawa, JP); Yoshitaka Moriya (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

G02F1/133305G02F1/13452G06F3/0412G09G3/2096G09G3/3611G09G5/003H05K1/189H10D86/411H10D86/423H10D86/60G02F1/167G06F2203/04102G09G3/3208G09G3/36G09G5/39G09G2300/0421G09G2300/0478H05K2201/10128

Abstract

Claims (65)

1 . A display device comprising:

a first substrate, the first substrate comprising a first resin;

a plurality of transistors over the first substrate;

a plurality of light-emitting elements over and electrically connected to the plurality of transistors; and

a second substrate over the plurality of light-emitting elements,

wherein the display device is configured to be bent in a first region, a second region, and a third region,

wherein, in a non-bent state, the first region is provided in a region not overlapping with a display portion of the display device,

wherein, in the non-bent state, the second region is provided in a region overlapping with a first light-emitting element of the plurality of light-emitting elements, and

wherein, in the non-bent state, the third region is provided in a region overlapping with a second light-emitting element of the plurality of light-emitting elements and provided between the first region and the second region.

2 . The display device according to claim 1 , further comprising:

a first insulating layer over the first resin;

a semiconductor layer over the first insulating layer;

a second insulating layer over the semiconductor layer;

a first gate electrode layer of a first transistor of the plurality of transistors over the second insulating layer and overlapping with the semiconductor layer;

a first electrode layer of the first light-emitting element over the first gate electrode layer; and

a second electrode layer of the first light-emitting element over the first electrode layer of the first light-emitting element with an electroluminescent layer of the first light-emitting element provided therebetween.

3 . The display device according to claim 2 ,

wherein the semiconductor layer comprises an oxide semiconductor, and

wherein the oxide semiconductor comprises at least indium.

4 . The display device according to claim 2 , further comprising:

a third insulating layer over the first gate electrode layer of the first transistor; and

a source electrode layer and a drain electrode layer over the third insulating layer,

wherein each of the source electrode layer and the drain electrode layer is electrically connected to the semiconductor layer.

5 . The display device according to claim 1 , further comprising:

a scanning line driver circuit; and

a signal line driver circuit.

6 . The display device according to claim 5 ,

wherein the scanning line driver circuit is located between the first substrate and the second substrate, and

wherein the signal line driver circuit is not located between the first substrate and the second substrate.

7 . The display device according to claim 5 , wherein the first region is provided between the third region and a fourth region in which the first resin overlaps with the signal line driver circuit.

8 . A display device comprising:

a first resin;

a plurality of transistors over the first resin;

a plurality of light-emitting elements over and electrically connected to the plurality of transistors; and

a second resin over the plurality of light-emitting elements,

wherein the display device is configured to be bent in a first region, a second region, and a third region,

wherein, in a non-bent state, the first region is provided in a region not overlapping with the plurality of light-emitting elements,

wherein, in the non-bent state, the second region is provided in a region overlapping with a first light-emitting element of the plurality of light-emitting elements, and

wherein, in the non-bent state, the third region is provided in a region overlapping with a second light-emitting element of the plurality of light-emitting elements and provided between the first region and the second region,

wherein the display device further comprises:

a scanning line driver circuit located between the first resin and the second resin; and

a signal line driver circuit not located between the first resin and the second resin,

wherein the first region is provided between the third region and a fourth region in which the first resin overlaps with the signal line driver circuit.

9 . The display device according to claim 8 ,

wherein each of the plurality of transistors comprises a semiconductor layer comprising an oxide semiconductor,

wherein the oxide semiconductor comprises at least indium, and

wherein one of the first resin and the second resin comprises an aramid resin or a polyimide resin.

10 . A display device comprising:

a first resin;

a plurality of transistors over the first resin;

a plurality of light-emitting elements over and electrically connected to the plurality of transistors; and

a second resin over the plurality of light-emitting elements,

wherein the display device is configured to be bent in a first region, a second region, and a third region,

wherein, in a non-bent state, the first region is provided in a region not overlapping with the plurality of light-emitting elements,

wherein, in the non-bent state, the second region is provided in a region overlapping with a first light-emitting element of the plurality of light-emitting elements, and

wherein, in the non-bent state, the third region is provided in a region overlapping with a second light-emitting element of the plurality of light-emitting elements and provided between the first region and the second region,

wherein the display device further comprises:

a scanning line driver circuit located between the first resin and the second resin; and

a signal line driver circuit not located between the first resin and the second resin,

wherein the first region is provided between the third region and a fourth region in which the first resin overlaps with the signal line driver circuit, and

wherein each of the first region, the second region, and the third region is bent in a first direction of the display device.

11 . The display device according to claim 10 ,

wherein each of the plurality of transistors comprises a semiconductor layer comprising an oxide semiconductor,

wherein the oxide semiconductor comprises at least indium, and

wherein one of the first resin and the second resin comprises an aramid resin or a polyimide resin.

Priority Claims (1)

Continuity (11)

References Cited (166)