IP Library › Granted Patent US 12,535,950
Granted Patent B2
US 12,535,950 · App. 18/610,556 · Granted Jan 27, 2026

Memory device compressing soft decision data and operating method thereof

Inventors: Suyong Kim (Suwon-si, KR); Ilhan Park (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
G06F3/0608G06F3/0656G06F3/0679
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Quick Facts
Patent No.
US 12,535,950
App. No.
18/610,556
Granted
Jan 27, 2026
Kind
B2
Abstract

A memory device includes a first memory cell array and a second memory cell array, a first page buffer and a second page buffer configured to read data from the first memory cell array and the second memory cell array, respectively; and a first compression circuit configured to compress first soft decision data into first compressed data by encoding a location of a bit having a first value among bits of the first soft decision data, the first soft decision data being obtained from the first memory cell array by using a plurality of soft read voltages, wherein the first compression circuit is further configured to compress the first soft decision data into the first compressed data while second hard decision data is being output, the second hard decision data being read from the second memory cell array by using a hard read voltage.

Claims (54)

1 . A memory device comprising:

a first memory cell array and a second memory cell array;

a first page buffer and a second page buffer configured to read data from the first memory cell array and the second memory cell array, respectively; and

a first compression circuit configured to compress first soft decision data into first compressed data by encoding a location of a bit having a first value among bits of the first soft decision data, the first soft decision data being obtained from the first memory cell array by using a plurality of soft read voltages, wherein:

the first compression circuit is further configured to compress the first soft decision data into the first compressed data using N bits while second hard decision data is being output, the second hard decision data being read from the second memory cell array by using a hard read voltage, where N is a natural number of at least 2;

N−1 bits among the N bits represent the location of the bit having the first value among 2 N-1 bits; and

a remaining one bit among the N bits represents whether the bit having the first value is a last bit having the first value among the 2 N-1 bits.

2 . The memory device of claim 1 , further comprising

a memory interface circuit configured to output the second hard decision data or the first compressed data through N input/output pins,

wherein the first compression circuit is further configured to encode the location of the bit having the first value by using N or fewer bits.

3 . The memory device of claim 2 , wherein

the first compression circuit is further configured to compress the first soft decision data in units of 2 N-1 bits by using the N bits.

4 . The memory device of claim 3 , wherein,

when there is no bit having the first value among the 2 N-1 bits,

the 2 N-1 bits are compressed into N−1 bits having the first values and one bit having a second value.

5 . The memory device of claim 3 , wherein

a last bit among the 2 N-1 bits is compressed into N−1 bits having the first value and one bit having a second value when the last bit among the 2 N-1 bits has the first value, and

the 2 N-1 bits are compressed into N bits having the first value when there is no bit having the first value among the 2 N-1 bits.

6 . The memory device of claim 1 , wherein the first compression circuit is further configured to add information to a front end of the first compressed data, the information indicating a size of the first compressed data.

7 . The memory device of claim 1 , wherein the first compression circuit is further configured to add a pattern to a back end of the first compressed data, the pattern indicating an end of the first compressed data.

8 . The memory device of claim 1 , further comprising

a second compression circuit configured to compress second soft decision data into second compressed data by encoding a location of a bit having the first value among bits of the second soft decision data, the second soft decision data being obtained from the second memory cell array by using the plurality of soft read voltages,

wherein the second compression circuit is further configured to compress the second soft decision data into the second compressed data while first hard decision data is being output, the first hard decision data being read from the first memory cell array by using the hard read voltage.

9 . An operating method of a memory device, the operating method comprising:

reading first hard decision data from a first memory cell array;

generating second compressed data by compressing second soft decision data obtained from a second memory cell array, while outputting the first hard decision data through an input/output (I/O) pin;

outputting the second compressed data through the I/O pin after outputting the first hard decision data;

reading second hard decision data from the second memory cell array;

generating first compressed data by compressing first soft decision data obtained from the first memory cell array, while outputting the second hard decision data through the I/O pin; and

outputting the first compressed data through the I/O pin after outputting the second hard decision data.

10 . The operating method of claim 9 , wherein

the generating of the first compressed data comprises compressing the first soft decision data in units of 2 N-1 bits by using N bits, where N is a natural number,

wherein the compressing of the first soft decision data in units of 2 N-1 bits comprises:

encoding a location of a bit having a first value by using N−1 bits among the N bits; and

encoding whether the bit having the first value is a last bit having the first value among the 2 N-1 bits by using a remaining one bit among the N bits.

11 . The operating method of claim 9 , wherein

the generating of the first compressed data comprises compressing the first soft decision data in units of 2 N bits by using N bits, where N is a natural number,

wherein the compressing of the first soft decision data in units of 2 N bits comprises

encoding a location of a bit having a first value by using N bits.

12 . The operating method of claim 11 , wherein the compressing of the first soft decision data in units of 2 N bits further comprises adding an end pattern to compressed data resulting from compressing the 2 N bits, the end pattern indicating completion of the compression of the 2 N bits.

13 . The operating method of claim 9 , wherein

the generating of the first compressed data comprises adding information to a front end of the first compressed data, the information indicating a size of the first compressed data.

14 . The operating method of claim 9 , wherein

the generating of the first compressed data comprises adding a pattern to a back end of the first compressed data, the pattern indicating an end of the first compressed data.

15 . A memory system comprising:

a memory device configured to generate second compressed data by compressing second soft decision data obtained from a second memory cell array, while outputting first hard decision data read from a first memory cell array, output the second compressed data after outputting the first hard decision data, generate first compressed data by compressing first soft decision data obtained from the first memory cell array, while outputting second hard decision data read from the second memory cell array, and output the first compressed data after outputting the second hard decision data; and

a memory controller configured to receive the first hard decision data, the second hard decision data, the first compressed data, and the second compressed data, obtain the first soft decision data by decompressing the first compressed data, correct an error in the first hard decision data based on the first hard decision data and the first soft decision data, and correct an error in the second hard decision data based on the second hard decision data and the second soft decision data.

16 . The memory system of claim 15 , wherein

the memory device is further configured to compress the first soft decision data in units of 2 N-1 bits by using N bits, where N is a natural number,

wherein N−1 bits among the N bits represent a location of a bit having a first value among the 2 N-1 bits, and

a remaining one bit among the N bits represents whether the bit having the first value is a last bit having the first value among the 2 N-1 bits.

17 . The memory system of claim 15 , wherein the memory device is further configured to compress the first soft decision data in units of 2 N bits by using N bits, where N is a natural number,

wherein the N bits represent a location of a bit having a first value among the 2 N bits.

18 . The memory system of claim 17 , wherein the memory device is further configured to add an end pattern to compressed data resulting from compressing the 2 N bits, the end pattern indicating completion of the compression of the 2 N bits.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2024
From: KIM, SUYONG; PARK, ILHAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 066838/0378 →
Priority Claims (2)
KR 10-2023-0038969 · Mar 24, 2023 · national
KR 10-2023-0078852 · Jun 20, 2023 · national
Continuity (1)
Related Publication 20240319874A1 · Sep 26, 2024
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