IP Library › Granted Patent US 12,536,111
Granted Patent B2
US 12,536,111 · App. 18/474,384 · Granted Jan 27, 2026

Systems and methods for semiconductor devices with extended high-bandwidth memory (HBM) offsets

Inventors: Anwar Ali (San Jose, CA); Deepam Trivedi (Santa Clara, CA); Ho-Hsin Yeh (Belmont, CA)
Assignee: Avago Technologies International Sales Pte. Limited
G06F13/1673G06F13/1678G06F13/4234
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,536,111
App. No.
18/474,384
Granted
Jan 27, 2026
Kind
B2
Abstract

The subject technology is directed to systems and methods for semiconductor devices with extended high-bandwidth memory (HBM) offsets. In a specific embodiment, the subject technology provides an apparatus that includes a circuit comprising a first connector and a second connector. The circuit is configured to send a first signal using the first connector to indicate a first selection. The apparatus further includes a first memory device comprising a first selector and a third connector and a fourth connector. The first selector is configured to couple the third connector to the second connector based on the first signal. The one or more connectors of the first memory devices cover a broad distance to ensure robust connectivity between the circuit and the first memory device. There are other embodiments as well.

Claims (36)

1 . An apparatus comprising:

a circuit comprising a first connector and a second connector, the circuit being configured to send a first signal using the first connector to indicate a first selection, the second connector being positioned at a first location;

an interposer comprising a first interconnect and a second interconnect; and

a first memory device comprising a first selector and a third connector and a fourth connector, the first selector being coupled to the first connector through the first interconnect, the first selector being configured to couple the third connector to the second connector through the second interconnect based on the first signal, the third connector being positioned closer to the first location than the fourth connector;

wherein the first selection comprises a selection of a connector of the first memory device to be coupled to the second connector and is determined based on a spatial proximity associated with the first memory device; and

wherein the third connector is coupled to the second connector in accordance with a predetermined routing rule characterized by a first routing angle.

2 . The apparatus of claim 1 , further comprising a second memory device, wherein:

the circuit further comprises a fifth connector and a sixth connector, the circuit being configured to send a second signal using the fifth connector to indicate a second selection, the sixth connector being positioned at a second location;

the interposer further comprises a third interconnect and a fourth interconnect; and

the second memory device comprises a second selector and a seventh connector and an eighth connector, the second selector being coupled to the fifth connector through the third interconnect, the second selector being configured to couple the sixth connector to the seventh connector through the fourth interconnect based on the second signal, the seventh connector being closer to the second location than the eighth connector.

3 . The apparatus of claim 1 , wherein the circuit comprises an application specific integrated circuit.

4 . The apparatus of claim 1 , wherein the first memory device comprises a high bandwidth memory.

5 . The apparatus of claim 1 , wherein the first connector comprises a physical layer circuit.

6 . An apparatus comprising:

a circuit comprising a first connector and a second connector, the circuit being configured to send a first signal using the first connector to indicate a first selection, the second connector being positioned at a first location;

an interposer comprising a first interconnect and a second interconnect; and

a first buffer die comprising a first selector and a third connector and a fourth connector, the first selector being coupled to the first connector through the first interconnect, the first selector being configured to couple the third connector to the second connector through the second interconnect based on the first signal, the third connector being positioned closer to the first location than the fourth connector;

wherein the first selection comprises a selection of a connector of the first memory device to be coupled to the second connector and is determined based on a spatial proximity associated with the first memory device; and

wherein the third connector is coupled to the second connector in accordance with a predetermined routing rule characterized by a first routing angle.

7 . The apparatus of claim 6 , further comprising a first memory device coupled to the first buffer die.

8 . The apparatus of claim 6 , further comprising a first memory device coupled to the interposer.

9 . The apparatus of claim 8 , wherein the first memory device comprises a high bandwidth memory.

10 . The apparatus of claim 6 , wherein the circuit comprises an application specific integrated circuit.

11 . The apparatus of claim 6 , wherein the first buffer die is coupled to the interposer.

12 . The apparatus of claim 6 , wherein the third connector is coupled to the second connector through the second interconnect.

13 . The apparatus of claim 6 , wherein the first selector comprises a multiplexor.

14 . The apparatus of claim 6 , wherein the first connector comprises a physical layer circuit.

15 . An apparatus comprising:

a circuit comprising a first connector and a second connector, the circuit being configured to send a first signal using the first connector to indicate a first selection, the second connector being positioned at a first location;

an interposer coupled to the circuit, the interposer comprising a first interconnect; and

a first memory device comprising a first selector and a third connector and a fourth connector, the first selector being coupled to the first connector through the first interconnect, the first selector being configured to couple the third connector to the second connector based on the first signal, the third connector being positioned closer to the first location than the fourth connector;

wherein the first selection comprises a selection of a connector of the first memory device to be coupled to the second connector and is determined based on a spatial proximity associated with the first memory device; and

wherein the third connector is coupled to the second connector in accordance with a predetermined routing rule characterized by a first routing angle.

16 . The apparatus of claim 15 , wherein the circuit comprises an application-specific integrated circuit.

17 . The apparatus of claim 15 , wherein the first memory device comprises a high bandwidth memory.

18 . The apparatus of claim 15 , wherein the first selector comprises a multiplexor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2023
From: ALI, ANWAR; TRIVEDI, DEEPAM; YEH, HO-HSIN
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 065025/0579 →
Continuity (2)
Provisional Application 63505934 · Jun 2, 2023
Related Publication 20240403240A1 · Dec 5, 2024
References Cited (22)
US 10658322B2 · Kwon et al. · 2020 [cited by applicant]
US 10998291B2 · Keeth · 2021 [cited by applicant]
US 11036660B2 · Ooi et al. · 2021 [cited by applicant]
US 11562993B2 · Collins · 2023 [cited by applicant]
US 20160163609A1 · Rahman · 2016 [cited by examiner]
US 20180102776A1 · Chandrasekar et al. · 2018 [cited by applicant]
US 20180358313A1 · Newman et al. · 2018 [cited by applicant]
US 20210407962A1 · Kim et al. · 2021 [cited by applicant]
US 20220028848A1 · Baek · 2022 [cited by applicant]
US 20220302080A1 · Ali · 2022 [cited by examiner]
US 20220358072A1 · Vergis et al. · 2022 [cited by applicant]
CN 111488309A · 2020 [cited by applicant]
EP 4064347A1 · 2020 [cited by applicant]
EP 3855442A1 · 2021 [cited by applicant]
TW 202143229A · 2021 [cited by applicant]
S. Park, Y. et al., “2.5D Large-Scale Interposer Bonding Process Verification using Daisy-Chain for PIM Heterogeneous Integration Platform,” 2023 ICEIC, Singapore, Feb. 5-8, 2023, pp. 1-3, available online Mar. 10, 2023… [cited by examiner]
Thomas Wong, “Enabling Cost-Effective, High-Performance Die-To-Die Connectivity,” Jul. 9, 2020, 16 pages. [cited by applicant]
Marketwired, “Open-Silicon Tapes Out Industry's First High Bandwidth Memory (HBM2) IP Subsystem Solution for 2.5D ASICs in 16nm FF+,” Sep. 28, 2016, 3 pages. [cited by applicant]
Cho et al., “Design and Analysis of Power Distribution Network (PDN) for High Bandwidth Memory (HBM) Interposer in 2.5D Terabyte/s Bandwidth Graphics Module,” May 1, 2016, 6 pages. [cited by applicant]
Jedec Solid State Technology Association, Jedec Standard, Low Power Double Data Rate 4 (LPDDR4), JESD209-4, Aug. 2014, 195 pages. [cited by applicant]
Wikipedia, Multiplexer, https://en.wikipedia.org/w/index.php?title=Multiplexer&oldid=953736475, Apr. 28, 2020, 8 pages. [cited by applicant]
European Patent Office, Extended Search Report, Application No. 24179346.2, Oct. 8, 2024, 12 pages. [cited by applicant]