IP Library › Granted Patent US 12,537,277
Granted Patent B2
US 12,537,277 · App. 18/660,257 · Granted Jan 27, 2026

Substrate integrated waveguide having multiple substrates

Inventors: Yi-Ju Lee (Hsinchu, TW); Ding-Bing Lin (Hsinchu, TW); Yi-Han Wu (Hsinchu, TW)
Assignee: ALPHA NETWORKS INC.
H01P3/121
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,537,277
App. No.
18/660,257
Granted
Jan 27, 2026
Kind
B2
Abstract

A substrate integrated waveguide having multiple substrate comprises a first substrate and a second substrate stacked with the first substrate, wherein metal layers are formed on opposite sides of the first substrate and opposite sides of the second substrate, a plurality of metal holes are formed between two metal layers of the same substrate to limit transmission paths of electromagnetic waves transmitted in the substrate, and areas having no metal therein are formed between the first and second substrates so that the electromagnetic waves could be transmitted between the first and second substrates thereby.

Claims (10)

1 . A substrate integrated waveguide having multiple substrates, comprising:

a first substrate having a first dielectric layer, a first metal layer and a second metal layer disposed on opposite sides of the first dielectric layer, and a plurality of first metal holes disposed in the first dielectric layer, wherein the first metal holes are arranged into a plurality of first hole-rows along a first direction in which an electromagnetic wave is transmitted in the first dielectric layer, and two terminals of each of the first metal holes are connected to the first metal layer and the second metal layer, respectively; and

a second substrate having a second dielectric layer, a third metal layer and a fourth metal layer disposed on opposite sides of the second dielectric layer, and a plurality of second metal holes disposed in the second dielectric layer, wherein the second metal holes are arranged into a plurality of second hole-rows along a second direction in which the electromagnetic wave is transmitted in the second dielectric layer, and two terminals of each of the second metal holes are connected to the third metal layer and the fourth metal layer, respectively;

wherein, the first substrate is stacked with the second substrate, the second metal layer faces the third metal layer, there is no metal within a first metal-less area of the second metal layer and a second metal-less area of the third metal layer such that the electromagnetic wave is transmitted between the first substrate and the second substrate through the first metal-less area and the second metal-less area, a first structure configured for transmitting and receiving the electromagnetic wave is disposed near a first side of the first metal-less area, and a plurality of third metal holes are disposed near a second side of the first metal-less area and arranged into a third hole-row along a third direction perpendicular to the first direction,

wherein the first side and the second side are opposite sides of the first metal-less area, and a second structure configured for transferring the electromagnetic wave is disposed on the second substrate near one side of the second metal-less area.

2 . The substrate integrated waveguide according to claim 1 , wherein an amount of the first hole-rows is the same as an amount of the second hole-rows.

3 . The substrate integrated waveguide according to claim 1 , wherein an amount of the first hole-rows is not the same as an amount of the second hole-rows.

4 . The substrate integrated waveguide according to claim 1 , wherein a third structure configured for transferring the electromagnetic wave is disposed on the second substrate near two sides of the second metal-less area.

5 . The substrate integrated waveguide according to claim 1 , wherein the second metal layer and the third metal layer are integrated as one metal layer.

6 . The substrate integrated waveguide according to claim 1 , wherein the first metal-less area on the second metal layer is an area on which a predetermined area is vertically projected, and the second metal-less area on the third metal layer is an area on which the predetermined area is vertically projected.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2024
From: LEE, YI-JU; LIN, DING-BING; WU, YI-HAN
To: ALPHA NETWORKS INC.
Reel/Frame 067368/0307 →
Priority Claims (1)
TW 112132735 · Aug 30, 2023 · national
Continuity (1)
Related Publication 20250079678A1 · Mar 6, 2025
References Cited (22)
US 6515562B1 · Takenoshita · 2003 [cited by examiner]
US 10374324B2 · Stevenson · 2019 [cited by examiner]
US 11658378B2 · Myers et al. · 2023 [cited by applicant]
US 20090220240A1 · Abhari et al. · 2009 [cited by applicant]
US 20150318618A1 · Chen · 2015 [cited by examiner]
US 20210084800A1 · Yan et al. · 2021 [cited by applicant]
US 20210111472A1 · Myers · 2021 [cited by examiner]
US 20220069455A1 · Tang et al. · 2022 [cited by applicant]
US 20220407200A1 · Chattopadhyay et al. · 2022 [cited by applicant]
CN 115995693 · 2023 [cited by applicant]
CN 116190959 · 2023 [cited by applicant]
CN 116417765 · 2023 [cited by applicant]
JP 2023026285 · 2023 [cited by applicant]
TW 202211535 · 2022 [cited by applicant]
WO 2019190396 · 2019 [cited by applicant]
JPA OA issued on May 14, 2025. [cited by applicant]
M. N. Hafiz, et al., “Design of a rectangular slot coupling for effective transition between two layers of SIW.”, 2015 IEEE International RF and Microwave Conference (RFM), 2015, pp. 40-44, DOI: 10.1109/RFM. 2015.578770… [cited by applicant]
European Patent Office , “European search report”, issued on Oct. 25, 2024. [cited by applicant]
D.V. Navarro-Mendez et. al., “Two Layer Slot-Antenna Array in SIW Technology”, Proceedings of the 40th European Microwave Conference, pp. 1492-1495, XP093214810, Sep. 28, 2010. [cited by applicant]
Han Tao et. al., “Millimeter-Wave High-Gain Substrate Integrated Multi-Slot Antenna Array with A Low Cross Polarization Leve”, IEEE, 2020 International Conference on Microwave and Millimeter Wave Technology, pp. 1-3, XP… [cited by applicant]
Kai-Da Xu, Xenxun Li and Yanhui Liu, “Dual-Frequency SIW Cavity-Backed Slot Antenna Using Two High-Order Modes”, IEEE, 2017 Sixth Asia—[Acific Conference on Antennas and Propagation, pp. 1-3, XP033376387, Oct. 16, 2017. [cited by applicant]
JPO OA issued on Sep. 3, 2025. [cited by applicant]