IP Library › Granted Patent US 12,538,657
Granted Patent B2
US 12,538,657 · App. 17/798,160 · Granted Jan 27, 2026

OLED display substrate and method for making the same, display panel and display device

Inventors: Mengyang Wen (Beijing, CN); Xing Fan (Beijing, CN); Yueping Zuo (Beijing, CN); Chunyang Wang (Beijing, CN); Xiongnan Zhang (Beijing, CN)
Assignee: BOE Technology Group Co., Ltd.
H10K59/122H10K71/00H10K59/1201
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Quick Facts
Patent No.
US 12,538,657
App. No.
17/798,160
Granted
Jan 27, 2026
Kind
B2
Abstract

An OLED display substrate and a method for making the same, a display panel and a display device are provided. The OLED display substrate includes: a base substrate; a thin-film transistor array layer located on the base substrate; a pixel definition layer and a light-emitting unit located on a side of the thin-film transistor array layer away from the base substrate; where the pixel definition layer defines a pixel opening penetrating the pixel definition layer, at least part of the hierarchical structure of the light-emitting unit is located in the pixel opening, and a side surface of the pixel opening is provided with a insulative barrier layer.

Claims (33)

1 . An OLED display substrate, comprising:

a base substrate;

a thin-film transistor array layer located on the base substrate;

a pixel definition layer and a light-emitting unit located on a side of the thin-film transistor array layer away from the base substrate; and

wherein the pixel definition layer defines a pixel opening penetrating the pixel definition layer, at least part of the hierarchical structure of the light-emitting unit is located in the pixel opening, and a side surface of the pixel opening is provided with an insulative barrier layer;

wherein the side surface of the pixel definition layer away from the base substrate is provided with a light shielding layer;

wherein the light shielding layer comprises a plurality of spaced light shielding graphics.

2 . The OLED display substrate according to claim 1 , wherein the insulative barrier layer uses an inorganic insulative material.

3 . The OLED display substrate according to claim 2 , wherein the insulative barrier layer uses a light shielding material.

4 . The OLED display substrate according to claim 2 , wherein the insulative barrier layer uses a molybdenum oxide.

5 . The OLED display substrate according to claim 1 , wherein the insulative barrier layer and the light shielding layer are arranged on the same layer and material.

6 . The OLED display substrate according to claim 1 , wherein the insulative barrier layer is integral with the light shielding layer.

7 . The OLED display substrate according to claim 1 , wherein the thickness of the insulative barrier layer is 200 nm-400 nm.

8 . A display panel, comprising an OLED display substrate according to claim 1 .

9 . A display device, comprising an OLED display substrate according to claim 1 .

10 . A method for making an OLED display substrate, comprising:

forming a thin-film transistor array layer on a base substrate;

forming a pixel definition layer on a side of the thin-film transistor array layer away from the base substrate, the pixel definition layer defining a pixel opening penetrating the pixel definition layer;

forming an insulative barrier layer on a side surface in the pixel opening; and

forming at least part of the hierarchical structure of a light-emitting unit in the pixel opening;

wherein the forming the insulative barrier layer on the side surface of the pixel opening comprises:

forming the insulative barrier layer by using a light shielding material;

wherein the method further comprises:

forming the light shielding layer on the side surface of the pixel definition layer away from the base substrate;

wherein the method further comprises: forming a plurality of spaced light shielding graphics by performing a patterning process on the light shielding layer.

11 . The method for making the OLED display substrate according to claim 10 , wherein the insulative barrier layer and the light shielding layer are simultaneously formed by one patterning process by using the light shielding material.

12 . The method for making the OLED display substrate according to claim 10 , wherein before the forming the pixel definition layer on a side of the thin-film transistor array layer away from the base substrate, the method further comprises:

forming a first electrode on a side of the thin-film transistor array layer away from the base substrate, the light-emitting unit comprising the first electrode;

wherein the forming the pixel definition layer on a side of the thin-film transistor array layer away from the base substrate comprises:

forming the pixel definition layer on a side of the first electrode away from the base substrate; and

the after forming the pixel definition layer on a side of the first electrode away from the base substrate, the method further comprising:

forming the light shielding material layer on the side surface of the pixel opening and a side of the pixel definition layer away from the base substrate,

forming the insulative barrier layer covering the side surface of the pixel opening and a plurality of spaced light shielding graphics covering a side of the pixel definition layer away from the base substrate by performing the patterning process on the light shielding material layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2022
From: WEN, MENGYANG; FAN, XING; ZUO, YUEPING; WANG, CHUNYANG; ZHANG, XIONGNAN
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 060742/0690 →
Priority Claims (1)
CN 202010511389.1 · Jun 8, 2020 · national
Continuity (1)
Related Publication 20230106236A1 · Apr 6, 2023
References Cited (13)
US 20020140343A1 · Hirabayashi · 2002 [cited by examiner]
US 20030020864A1 · Yanagawa et al. · 2003 [cited by applicant]
US 20170271419A1 · Cui et al. · 2017 [cited by applicant]
US 20190123116A1 · Wang et al. · 2019 [cited by applicant]
CN 105765739A · 2016 [cited by examiner]
CN 107819080A · 2018 [cited by applicant]
CN 108511621A · 2018 [cited by applicant]
CN 109616499A · 2019 [cited by applicant]
CN 111310741A · 2020 [cited by applicant]
CN 111584590A · 2020 [cited by applicant]
CN 111584608A · 2020 [cited by applicant]
Title: Polymer light emitting diode structure, manufacturing method, display substrate, and display device Images of Fig. 1 Cited for Reference Copy; Publication CN105765739A.Jul. 13, 2016; Inventor: Cui Ying; Hu Chunji… [cited by examiner]
PCT/CN2021/094127 international search report and written opinion. [cited by applicant]