Treatment liquid for semiconductor with ruthenium
Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.
1 . A treatment liquid for a semiconductor with ruthenium, comprising a ligand which coordinates to ruthenium and an oxidant, wherein
the oxidant is a hypobromite ion,
a concentration of the hypobromite ion is 0.01 to 1.9% by mass,
the ligand which coordinates to ruthenium is a compound having a carbonyl group, and
a concentration of the ligand which coordinates to ruthenium is 0.01 to 35% by mass.
2 . The treatment liquid for a semiconductor with ruthenium according to claim 1 , wherein the ligand which coordinates to ruthenium is at least one selected from the group consisting of ligands represented by the following formulae (1) to (4):
wherein R 1 and R 2 are each independently a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond, or a hydroxyl group;
wherein R 3 and R 5 are each independently a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond, or a hydroxyl group, and R 4 is a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond;
wherein R 6 , R 8 , and R 9 are each independently a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond, or a hydroxyl group, and R 7 is a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond;
wherein R 10 and R 12 to 14 are each independently a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond, or a hydroxyl group, and R 11 is a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond.
3 . The treatment liquid for a semiconductor with ruthenium according to claim 1 , wherein the ligand which coordinates to ruthenium is a ligand represented by the following formula (5):
wherein R 15 and R 16 are each independently a hydrocarbon group having carbon number of 1 to 10, optionally containing a hydroxyl group or/and an ether bond, or a hydroxyl group.
4 . The treatment liquid for a semiconductor with ruthenium according to claim 2 , wherein the compound having a carbonyl group is oxalic acid, dimethyl oxalate, 1,2,3,4,5,6-cyclohexanehexacarboxylic acid, succinic acid, acetic acid, butane-1,2,3,4-tetracarboxylic acid, dimethylmalonic acid, glutaric acid, diglycolic acid, citric acid, malonic acid, 1,3-adamantane dicarboxylic acid, or 2,2-bis(hydroxymethyl)propionic acid.
5 . The treatment liquid for a semiconductor with ruthenium according to claim 1 , having a pH at 25° C. of 7 or more and 14 or less.
6 . The treatment liquid for a semiconductor with ruthenium according to claim 1 , wherein the concentration of the hypobromite ion is 0.012 to 1.9% by mass.
7 . A method for treating a ruthenium-containing wafer with the treatment liquid according to claim 1 , comprising contacting the ruthenium-containing wafer with the treatment liquid.