Sheet-shaped solder
A sheet-shaped solder that is not susceptible to electromigration, and a solder joint part and semiconductor device using the same are provided. A pressed sheet-shaped solder containing a solder alloy containing Sn as a primary component, an additional element, and an incidental impurity is provided. A pressed surface of the sheet-shaped solder is a surface perpendicular to a main surface of the sheet-shaped solder, and c-axes of Sn crystals are aligned in a direction perpendicular to a thickness direction of the sheet-shaped solder. Moreover, a solder joint part including a semiconductor element, and an electrically conductive connection member, and a solder joining layer being the above sheet-shaped solder melted between the semiconductor element and the electrically conductive connection member is provided.
1 . A pressed sheet-shaped solder containing a solder alloy containing Sn as a primary component, at least one additional element, and incidental impurities, wherein
a pressed surface of the sheet-shaped solder is a surface perpendicular to a main surface of the sheet-shaped solder, and
c-axes of Sn crystals are aligned in a direction perpendicular to a thickness direction of the sheet-shaped solder,
wherein a degree of c-axis alignment being an index of an overall c-axis orientation of the Sn crystals in the pressed surface is not less than 0.3 and not greater than 0.95.
2 . The sheet-shaped solder according to claim 1 , wherein the at least one additional element is selected from among Sb, Cu, Ag, Ni, Ge, and combination thereof.
3 . A solder joint comprising:
a semiconductor element;
an electrically conductive connection member; and
a solder joining layer being the sheet-shaped solder according to claim 1 , melted between the semiconductor element and the electrically conductive connection member.
4 . The solder joint according to claim 3 , wherein the electrically conductive connection member is a lead frame.
5 . A semiconductor device comprising the solder joint according to claim 3 .
6 . A method of manufacturing a semiconductor device comprising:
pressing a solder alloy containing Sn as a primary component, an additional element, and an incidental impurity to thereby manufacture a sheet-shaped solder in which a pressed surface is a surface perpendicular to a main surface of the sheet-shaped solder and in which c-axes of Sn crystals are aligned perpendicularly to a thickness direction of the sheet-shaped solder;
laminating a semiconductor element, the sheet-shaped solder, and an electrically conductive connection member; and
melting the sheet-shaped solder.
7 . The method of manufacturing a semiconductor device according to claim 6 , wherein the pressing includes applying a pressure until a degree of c-axis alignment being an index of an overall c-axis orientation of Sn crystals reaches not less than 0.3.
8 . The method of manufacturing a semiconductor device according to claim 6 , further comprising cutting the pressed solder alloy in a direction parallel to a pressure application direction to obtain the sheet-shaped solder.
9 . The method of manufacturing a semiconductor device according to claim 7 , wherein the pressing includes applying a pressure until a degree of c-axis alignment being an index of an overall c-axis orientation of Sn crystals reaches not greater than 0.95.