Electronic devices comprising blocking regions, and related electronic systems and methods
An electronic device comprising one or more blocking regions. The electronic device also comprises a source stack comprising one or more conductive materials, a source contact vertically adjacent to the source stack, and a doped semiconductive material vertically adjacent to the source contact. Tiers of alternating conductive materials and dielectric materials are vertically adjacent to the doped semiconductive material, and pillars extend through the tiers of alternating conductive materials and dielectric materials, the doped semiconductive material, and the source contact and into the source stack. The one or more blocking regions are laterally adjacent to the semiconductive material. Additional electronic devices, electronic systems, and methods are also disclosed.
1 . An electronic device, comprising:
a source stack comprising one or more conductive materials;
a source contact vertically adjacent to the source stack;
a doped semiconductive material directly vertically adjacent to the source contact;
tiers of alternating conductive materials and dielectric materials vertically adjacent to the doped semiconductive material;
pillars comprising a blocking material extending through the tiers of alternating conductive materials and dielectric materials, the doped semiconductive material, and the source contact and into the source stack; and
one or more blocking regions laterally adjacent to the doped semiconductive material.
2 . The electronic device of claim 1 , further comprising a fill material vertically adjacent to the source contact, the fill material extending through the tiers of alternating conductive materials and dielectric materials and the doped semiconductive material.
3 . The electronic device of claim 2 , wherein the one or more blocking regions are laterally interposed between the fill material and the doped semiconductive material.
4 . The electronic device of claim 2 , wherein one blocking region is laterally adjacent to the fill material.
5 . The electronic device of claim 2 , wherein two blocking regions are laterally adjacent to the fill material, the two blocking regions on opposite sides of the fill material.
6 . The electronic device of claim 1 , wherein the one or more blocking regions comprises titanium, titanium silicide, titanium cobalt silicide, tungsten, tungsten nitride, tungsten nitride silicide, tungsten silicide, or a combination thereof.
7 . The electronic device of claim 1 , wherein the one or more blocking regions comprises multiple phases of titanium, titanium silicide, titanium cobalt silicide, tungsten, tungsten nitride, tungsten nitride silicide, tungsten silicide, or a combination thereof.
8 . The electronic device of claim 1 , wherein the one or more blocking regions comprises tungsten silicide.
9 . An electronic device, comprising:
a source contact vertically adjacent to a source stack comprising one or more conductive materials;
a doped semiconductive material comprising polysilicon directly vertically adjacent to the source contact;
one or more blocking regions laterally adjacent to the doped semiconductive material, the one or more blocking regions comprising a metal or a metallized material of the polysilicon;
tiers of alternating conductive materials and dielectric materials vertically adjacent to the doped semiconductive material; and
pillars comprising a blocking material extending through the tiers of alternating conductive materials and dielectric materials, the doped semiconductive material, and the source contact and into the source stack.
10 . The electronic device of claim 9 , wherein the one or more blocking regions comprises a homogeneous composition.
11 . The electronic device of claim 9 , wherein the one or more blocking regions comprises a heterogeneous composition.
12 . The electronic device of claim 11 , wherein the heterogeneous composition of the one or more blocking regions comprises a gradient of silicon atoms.
13 . The electronic device of claim 9 , wherein a portion of the one or more blocking regions proximal to the doped semiconductive material exhibits a different chemical composition than a portion of the one or more blocking regions distal to the doped semiconductive material.
14 . The electronic device of claim 13 , wherein the one or more blocking regions comprises a gradient of silicon atoms in tungsten silicide.
15 . The electronic device of claim 9 , further comprising a fill material, the one or more blocking regions between the doped semiconductive material and the fill material.
16 . An electronic system, comprising:
an input device;
an output device;
a processor device; and
one or more memory devices operable coupled to the processor device, the one or more memory devices comprising:
a source stack comprising one or more conductive materials;
a source contact vertically adjacent to the source stack;
a doped semiconductive material directly vertically adjacent to the source contact;
tiers of alternating conductive materials and dielectric materials vertically adjacent to the doped semiconductive material;
memory pillars extending through the tiers of alternating conductive materials and dielectric materials and into the source stack;
a fill material laterally adjacent to the memory pillars, the fill material extending through the tiers of alternating conductive materials and dielectric materials and to the source contact; and
one or more blocking regions between the doped semiconductive material and the fill material.
17 . A method of forming an electronic device, the method comprising:
forming an electronic device structure comprising a source contact sacrificial structure adjacent to a source stack, a doped semiconductive material comprising a polysilicon material directly vertically adjacent to the source contact sacrificial structure, and an insulative cap material adjacent to the doped semiconductive material;
forming an opening in the insulative cap material and doped semiconductive material to expose the doped semiconductive material;
converting an exposed portion of the polysilicon material into one or more blocking regions comprising a metal or a metallized material of the polysilicon material;
forming a slit sacrificial structure in the opening;
forming tiers adjacent to the doped semiconductive material, the tiers comprising alternating dielectric materials and nitride materials;
forming pillars comprising a blocking material through the tiers, the doped semiconductive material, and the source contact sacrificial structure and into the source stack;
removing at least a portion of the slit sacrificial structure to form a slit opening extending through the tiers and the slit sacrificial structure and exposing the source contact sacrificial structure and the one or more blocking regions;
removing the source contact sacrificial structure to form a source contact opening;
forming a source contact in the source contact opening;
replacing the nitride materials of the tiers with conductive materials; and
forming a fill material in the slit opening, the one or more blocking regions laterally adjacent to the fill material.
18 . The method of claim 17 , wherein converting an exposed portion of the polysilicon material into one or more blocking regions comprises forming the one or more blocking regions laterally adjacent to the doped semiconductive material.
19 . The method of claim 17 , wherein converting an exposed portion of the polysilicon material into one or more blocking regions comprises forming a gradient of silicon in the one or more blocking regions.
20 . The method of claim 17 , wherein converting an exposed portion of the polysilicon material into one or more blocking regions comprises forming the one or more blocking regions comprising titanium, titanium silicide, titanium cobalt silicide, tungsten, tungsten nitride, tungsten nitride silicide, tungsten silicide, or a combination thereof.
21 . The method of claim 17 , wherein converting an exposed portion of the polysilicon material into one or more blocking regions comprises forming the one or more blocking regions comprising a tungsten-containing material or a titanium-containing material.
22 . The method of claim 17 , wherein forming a fill material in the slit opening comprises forming the fill material in direct contact with one blocking region.
23 . The method of claim 22 , wherein forming the fill material in direct contact with one blocking region comprises forming the one blocking region separating the doped semiconductive material and the fill material.
24 . The method of claim 17 , wherein forming a fill material in the slit opening comprises forming the fill material in direct contact with two blocking regions.
25 . The method of claim 24 , wherein forming the fill material in direct contact with two blocking region comprises forming the two blocking regions separating the doped semiconductive material and the fill material.