Three-dimensional memory device with low resistance buffer pillar
Provided is a three-dimensional (3D) memory device including: a substrate, a stack structure, and a vertical channel pillar. The stack structure is disposed on the substrate. The stack structure includes a plurality of dielectric layers and a plurality of gate layers stacked alternately. The vertical channel pillar penetrates through the stack structure. The vertical channel pillar includes a first source/drain pillar and a channel layer laterally surrounding the first source/drain pillar. The first source/drain pillar includes a first buffer pillar and a first semiconductor layer having a first conductivity type wrapping the first buffer pillar. The channel layer includes a polysilicon layer having a second conductivity type different from the first conductivity type. In some embodiments, the 3D memory device may be, but is not limited to, a AND flash memory.
1 . A three-dimensional (3D) memory device, comprising:
a substrate;
a stack structure, disposed on the substrate, wherein the stack structure comprises a plurality of dielectric layers and a plurality of gate layers stacked alternately; and
a vertical channel pillar, penetrating through the stack structure, wherein the vertical channel pillar comprises:
a first source/drain pillar comprising a first buffer pillar and a first semiconductor layer having a first conductivity type wrapping the first buffer pillar, wherein a resistance value of the first buffer pillar is lower than a resistance value of the first semiconductor layer;
a second source/drain pillar comprising a second buffer pillar and a second semiconductor layer having the first conductivity type wrapping the second buffer pillar; and
a channel layer laterally surrounding the first source/drain pillar and the second source/drain pillar, wherein the channel layer comprises a polysilicon layer having a second conductivity type different from the first conductivity type.
2 . The 3D memory device according to claim 1 , wherein the first source/drain pillar further comprises a first barrier layer disposed between the first buffer pillar and the first semiconductor layer.
3 . The 3D memory device according to claim 1 , wherein the first semiconductor layer is in contact with the channel layer, the first semiconductor layer has positive charge carriers and the channel layer has negative charge carriers.
4 . The 3D memory device according to claim 1 , wherein the second source/drain pillar further comprises a second barrier layer disposed between the second buffer pillar and the second semiconductor layer.
5 . The 3D memory device according to claim 4 , wherein a thickness of the first semiconductor layer is 5 nm to 100 nm, and a thickness of the second semiconductor layer is 5 nm to 100 nm.
6 . The 3D memory device according to claim 1 , wherein the second semiconductor layer is in contact with the channel layer, the second semiconductor layer has positive charge carriers and the channel layer has negative charge carriers.
7 . The 3D memory device according to claim 1 , wherein the first buffer pillar has a bottom surface lower than a bottom surface of the stack structure.
8 . The 3D memory device according to claim 1 , wherein the first buffer pillar has a bottom surface between a top surface and a bottom surface of the stack structure.
9 . The 3D memory device according to claim 8 , wherein the first semiconductor layer comprises:
a lower portion having a top surface and a bottom surface opposite to each other, the top surface of the lower portion in contact with the bottom surface of the first buffer pillar, and the bottom surface of the lower portion lower than the bottom surface of the stack structure; and
an upper portion laterally surrounding a sidewall of the first buffer pillar.
10 . The 3D memory device according to claim 9 , wherein a ratio (H 1 /H 2 ) of a height H 1 of the lower portion to a height H 2 of the first buffer pillar is between 0.01 and 0.99.