High-voltage based low-power, temperature dependent, thin-oxide only on-chip high current low drop out (LDO) regulator
Techniques to utilize thin-oxide devices, such as gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs), in high voltage environments, such as to provide a high-voltage based low-power, temperature dependent, thin-oxide-only on-chip high current low drop out (LDO) regulator in a system-on-chip (SoC), such as provide power to configuration random-access memory (CRAM) cells distributed throughout configurable/programmable circuitry. Thin-oxide only circuitry may include thin-oxide-only amplifier circuitry, thin-oxide-only power gate circuitry, thin-oxide-only level shifters that shift voltage swings of control signals to voltage domains of the power gate circuitry, and thin-oxide-only clamp circuitry.
1 . An apparatus, comprising:
low drop out (LDO) regulator circuitry configured to regulate an output voltage based on a reference voltage;
wherein the LDO regulator circuitry comprises metal-oxide-semiconductor field-effect transistors (MOSFETs);
wherein gate-oxide layers of the MOSFETs are 3 nanometers or less;
wherein a voltage of a supply rail of the LDO regulator circuitry, the reference voltage, and the output voltage exceed a desired gate-to-source voltage of the MOSFETs; and
wherein the LDO regulator circuitry is configured to maintain gate-to-source voltages of the MOSFETs within the desired gate-to-source voltage.
2 . The apparatus of claim 1 , wherein the LDO regulator circuitry is configured to maintain the gate-to-source voltages of the MOSFETs within the desired gate-to-source voltage to protect the gate-oxide layers of the MOSFETs from strain.
3 . The apparatus of claim 1 , wherein:
the LDO regulator circuitry comprises a plurality of LDO regulator circuits configured to regulate output voltages for respective load circuitry based on the reference voltage; and
a first one of the LDO regulator circuits comprises a core circuit configured to regulate a voltage at an output of the core circuit based on the reference voltage, and a plurality of sub-circuits configured to distribute the regulated voltage of the core circuit to respective loads.
4 . The apparatus of claim 3 , wherein:
the core circuit comprises a first stage amplifier circuit comprising a differential amplifier and a first MOSFET configured to couple the supply rail to the output of the core circuit based on an output of the differential amplifier;
a first sub-circuit of the sub-circuits comprises a regulated rail coupled to the output of the core circuit, and a second stage amplifier circuit comprising a second MOSFET configured to provide power from the supply rail to the regulated rail; and
the core circuit further comprises first power gate circuitry configured to control the second MOSFET based on a power gate control, including to shift a voltage swing of the power gate control to maintain a gate-to-source voltage of the second MOSFET within the desired gate-to-source voltage.
5 . The apparatus of claim 4 , wherein:
the first power gate circuitry is configured to shift the voltage swing of the power gate control from a voltage swing of V 1 to V 2 , to a voltage swing of V 3 to V 4 ;
V
1
=
0
v
;
0.7
≤
V
2
<
0.9
v
;
0.9
v
≤
V
3
<
1.2
v
;
and
V
4
≥
1.2
v
.
6 . The apparatus of claim 4 , wherein the first power gate circuitry comprises:
a third MOSFET configured to couple the supply rail to a gate of the second MOSFET;
a fourth MOSFET configured to couple the output of the differential amplifier to the gate of the second MOSFET; and
level shift circuitry configured to control the third and fourth MOSFETS based on the power gate control.
7 . The apparatus of claim 6 , wherein the level shift circuitry comprises a differential MOSFET-based voltage divider circuit comprising a first output configured to control the third MOSFET and a second output configured to control the fourth MOSFET.
8 . The apparatus of claim 7 , wherein:
the power gate control has a voltage swing of V 1 to V 2 ;
the differential MOSFET-based voltage divider circuit is configured to provide the first output with a voltage swing of V 3 to V 4 , and to provide the second output with a voltage swing of V 5 to V 6 ;
V
1
=
0
v
;
0.7
≤
V
2
<
0.9
v
;
V
3
≥
1.2
v
;
V
4
=
1
2
V
3
;
V
5
=
0
v
;
and
V
6
≥
1.2
v
.
9 . The apparatus of claim 4 , wherein the first sub-circuit further comprises second power gate circuitry, and wherein the second power gate circuitry comprises:
a third MOSFET configured to couple the regulated rail to an output of the first sub-circuit based on the power gate control; and
level shift circuitry configured to control the third MOSFET based on the power gate control, including to shift the voltage swing of the power gate control to a voltage domain of the third MOSFET.
10 . The apparatus of claim 4 , wherein the first sub-circuit further comprises start-up circuitry, and wherein the start-up circuitry comprises:
a third MOSFET configured to apply the supply rail to an output of the first sub-circuit; and
level shift circuitry configured to control the third MOSFET based on a clamp control, including to shift a voltage swing of the clamp control to maintain a gate-to-source voltage of the third MOSFET within the desired gate-to-source voltage.
11 . The apparatus of claim 10 , wherein the level shift circuitry comprises a differential MOSFET-based voltage divider circuit.
12 . The apparatus of claim 11 , wherein:
the differential MOSFET-based voltage divider circuit is configured to shift the voltage swing of the clamp control from a voltage swing of V 1 to V 2 , to a voltage swing of V 3 to V 4 ;
V
1
=
0
v
;
0.7
≤
V
2
<
0.9
v
;
V
3
≥
1.2
v
;
and
V
4
=
1
2
V
3.
13 . The apparatus of claim 4 , wherein the first sub-circuit further comprises clamp circuitry, and wherein the clamp circuitry comprises:
a third MOSFET configured to clamp an output of the first sub-circuit to a voltage that is below the voltage of the supply rail; and
control circuitry configured to control the third MOSFET with a control having a voltage swing of 0 v to voltage of the regulated rail, based on the power gate control and a clamp control.
14 . The apparatus of claim 4 , wherein:
the core circuit further comprises fixed leaker circuitry coupled to the output of the core circuit; and
the first sub-circuit comprises programmable leaker circuitry coupled to an output of the sub-circuit.
15 . The apparatus of claim 4 , wherein the LDO regulator circuitry further comprises:
a first stage amplifier circuit comprising a differential amplifier and a first MOSFET configured to couple the supply rail to a regulated rail based on an output of the differential amplifier;
a second stage amplifier circuit comprising a second MOSFET configured to provide power from the supply rail to the regulated rail; and
first power gate circuitry configured to control the second MOSFET based on a power gate control, including to shift a voltage swing of the power gate control to maintain a gate-to-source voltage of the second MOSFET within the desired gate-to-source voltage.
16 . The apparatus of claim 15 , wherein the LDO regulator circuitry further comprises second power gate circuitry, and wherein the second power gate circuitry comprises:
a third MOSFET configured to couple the regulated rail to an output of the first sub-circuit based on the power gate control; and
level shift circuitry configured to control the third MOSFET based on the power gate control, including to shift the voltage swing of the power gate control to a voltage domain of the third MOSFET.
17 . The apparatus of claim 15 , wherein the LDO regulator circuitry further comprises start-up circuitry, and wherein the start-up circuitry comprises:
a third MOSFET configured to apply the supply rail to an output of the first sub-circuit; and
level shift circuitry configured to control the third MOSFET based on a clamp control, including to shift a voltage swing of the clamp control to maintain a gate-to-source voltage of the third MOSFET within the desired gate-to-source voltage.
18 . The apparatus of claim 15 , wherein the LDO regulator circuitry further comprises clamp circuitry, and wherein the clamp circuitry comprises:
a third MOSFET configured to clamp an output of the first sub-circuit to a voltage that is below the voltage of the supply rail; and
control circuitry configured to control the third MOSFET with a control having a voltage swing of 0 v to a voltage of the regulated rail, based on the power gate control and a clamp control.
19 . A integrated circuit (IC) device, comprising:
a gate-all-around metal-oxide-semiconductor field-effect transistor (MOSFET), configured to couple a first node of the IC device to a second node of the IC device; and
power gate circuitry configured to control the MOSFET based on a power gate control, wherein a voltage swing of the power gate control exceeds a desired gate-to-source voltage of the MOSFET, and wherein the power gate circuitry is further configured to shift the voltage swing of the power gate control to maintain the gate-to-source voltage of the MOSFET within the desired gate-to-source voltage.
20 . The IC device of claim 19 , wherein a gate-oxide layer of the MOSFET is 3 nanometers or less.