Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order using a multi-chamber apparatus; a step of forming a conductive film; a step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape; a step of forming a sixth insulator and an insulating film in this order using a multi-chamber apparatus; a step of planarizing the insulating film; a step of forming, in the insulating film and the sixth insulator, an opening where the second oxide is exposed; a step of forming a seventh insulator and a first conductor; and a step of forming an eighth insulator and a ninth insulator in this order using a multi-chamber apparatus.
1 . A method for manufacturing a semiconductor device, comprising:
a first step of forming a first insulator, a second insulator, and a third insulator in this order;
a second step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order;
a third step of forming a conductive film over and in contact with the third oxide film;
a fourth step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape;
a fifth step of forming a sixth insulator and an insulating film in this order;
a sixth step of planarizing the insulating film;
a seventh step of processing the insulating film, the sixth insulator, the conductive layer, and the oxide layer, thereby forming a first conductor, a second conductor, a third oxide, a fourth oxide, and an opening reaching the second oxide;
an eighth step of forming a seventh insulator in contact with the insulating film, the sixth insulator, the first conductor, the second conductor, the third oxide, and the fourth oxide in the opening;
a ninth step of forming a third conductor over the seventh insulator in the opening; and
a tenth step of forming an eighth insulator and a ninth insulator in this order,
wherein the first step is performed using a first multi-chamber apparatus,
wherein the second step is performed using a second multi-chamber apparatus,
wherein the fifth step is performed using a third multi-chamber apparatus, and
wherein the tenth step is performed using a fourth multi-chamber apparatus.
2 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the fourth insulator, the fifth insulator, the first oxide film, the second oxide film, and the third oxide film are formed by a sputtering method.
3 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first insulator, the second insulator, and the third insulator are formed by a sputtering method.
4 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the sixth insulator and the insulating film are formed by a sputtering method.
5 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second oxide film is formed using an In-M-Zn oxide target, where Mis gallium, aluminum, yttrium, or tin.
6 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first multi-chamber apparatus, the third multi-chamber apparatus, and the fourth multi-chamber apparatus are the same apparatus.
7 . A method for manufacturing a semiconductor device, comprising:
a first step of forming a first insulator, a second insulator, and a third insulator in this order;
a second step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order;
a third step of forming a conductive film over and in contact with the third oxide film;
a fourth step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape;
a fifth step of forming a sixth insulator and an insulating film in this order;
a sixth step of planarizing the insulating film;
a seventh step of processing the insulating film, the sixth insulator, the conductive layer, and the oxide layer, thereby forming a first conductor, a second conductor, a third oxide, a fourth oxide, and an opening where a top surface of the second oxide is exposed;
an eighth step of forming a seventh insulator and a third conductor in this order;
a ninth step of forming an eighth insulator;
a tenth step of processing the eighth insulator, the insulating film, the sixth insulator, the fifth insulator, the fourth insulator, the third insulator, and the second insulator, thereby exposing a top surface of the first insulator; and
an eleventh step of forming a ninth insulator and a tenth insulator in this order,
wherein the first step is performed using a first multi-chamber apparatus,
wherein the second step is performed using a second multi-chamber apparatus,
wherein the fifth step is performed using a third multi-chamber apparatus, and
wherein the eleventh step is performed using a fourth multi-chamber apparatus.
8 . The method for manufacturing a semiconductor device, according to claim 7 ,
wherein the fourth insulator, the fifth insulator, the first oxide film, the second oxide film, and the third oxide film are formed by a sputtering method.
9 . The method for manufacturing a semiconductor device, according to claim 7 ,
wherein the first insulator, the second insulator, and the third insulator are formed by a sputtering method.
10 . The method for manufacturing a semiconductor device, according to claim 7 ,
wherein the sixth insulator and the insulating film are formed by a sputtering method.
11 . The method for manufacturing a semiconductor device, according to claim 7 ,
wherein the second oxide film is formed using an In-M-Zn oxide target, where Mis gallium, aluminum, yttrium, or tin.
12 . The method for manufacturing a semiconductor device, according to claim 7 ,
wherein the first multi-chamber apparatus, the third multi-chamber apparatus, and the fourth multi-chamber apparatus are the same apparatus.