IP Library › Granted Patent US 12,546,659
Granted Patent B2
US 12,546,659 · App. 18/425,874 · Granted Feb 10, 2026

Electroconductive thermal insulating material and infrared sensor

Inventor: Kunihiko Nakamura (Osaka, JP)
Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
G01J5/046G01J5/12G01J5/20
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Quick Facts
Patent No.
US 12,546,659
App. No.
18/425,874
Granted
Feb 10, 2026
Kind
B2
Abstract

An electroconductive thermal insulating material includes first domains and at least one second domain. The first domains each have a phononic crystal, and the phononic crystal has holes arranged in plan view. The second domain is a domain formed around the first domain in plan view and having no hole.

Claims (43)

1 . An infrared sensor comprising:

a substrate;

an infrared receiver; and

an electroconductive thermal insulating material, wherein

the electroconductive thermal insulating material comprises:

first domains each having a phononic crystal, the phononic crystal having holes arranged in plan view;

at least one second domain formed around the first domain in plan view and having no hole,

a connected portion connected to at least one selected from the group consisting of the substrate and a member on the substrate; and

a separated portion separated from the substrate, wherein

the first domains are divided from each other by the second domain,

in plan view, the first domain has a substantially polygonal shape in which at least one interior angle is greater than 90°,

the infrared receiver is joined to the separated portion of the electroconductive thermal insulating material,

the infrared receiver is supported by the electroconductive thermal insulating material in a state where the infrared receiver is separated from the substrate, and

the electroconductive thermal insulating material includes, between a joined portion thereof joined to the infrared receiver and the connected portion, the first domain and the second domain.

2 . The infrared sensor according to claim 1 , wherein

the infrared receiver is a thermopile infrared receiver,

the electroconductive thermal insulating material has:

a first region having a first Seebeck coefficient;

a second region having a second Seebeck coefficient different from the first Seebeck coefficient; and

a joining region joining the first region and the second region to each other, and

the infrared receiver is joined to the joining region of the electroconductive thermal insulating material.

3 . The infrared sensor according to claim 1 , wherein

the infrared receiver is a bolometer infrared receiver, and

the infrared sensor comprises:

a first wiring and a second wiring both electrically connected to the infrared receiver;

a first signal processing circuit electrically connected to the first wiring; and

a second signal processing circuit electrically connected to the second wiring.

4 . The infrared sensor according to claim 1 , wherein

the first domain and the second domain are formed throughout the separated portion of the electroconductive thermal insulating material.

5 . The infrared sensor according to claim 1 , wherein

in plan view, the first domain has a shape capable of tessellation.

6 . The infrared sensor according to claim 1 , wherein

in plan view, the first domain has a substantially obtuse triangular shape, a substantially parallelogrammic shape, or a substantially parallel hexagonal shape.

7 . The infrared sensor according to claim 1 , wherein

in plan view, the first domain has a substantially hexagonal shape, and

the first domains are arranged in a substantially honeycomb pattern.

8 . The infrared sensor according to claim 1 , wherein

the holes are arranged with a periodicity P in plan view, and

the first domain has an area of 25 P 2 or more in plan view.

9 . The infrared sensor according to claim 1 , wherein

the second domain includes:

a base layer formed to be flush with the first domain; and

a reinforcing layer disposed on the base layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2024
From: NAKAMURA, KUNIHIKO
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 067942/0709 →
Priority Claims (1)
JP 2021-127296 · Aug 3, 2021 · national
Continuity (2)
Continuation PCTJP2022026883 · Jul 6, 2022
Related Publication 20240183718A1 · Jun 6, 2024
References Cited (14)
US 8094023B1 · El-Kady et al. · 2012 [cited by applicant]
US 10281333B2 · Takahashi · 2019 [cited by examiner]
US 10605667B2 · Kawasaki · 2020 [cited by examiner]
US 20170047499A1 · Hussein · 2017 [cited by applicant]
US 20170069818A1 · Mitrovic et al. · 2017 [cited by applicant]
US 20170356806A1 · Takahashi et al. · 2017 [cited by applicant]
US 20190178718A1 · Kawasaki et al. · 2019 [cited by applicant]
US 20200003625A1 · Tambo et al. · 2020 [cited by applicant]
US 20210028759A1 · Ayazi et al. · 2021 [cited by applicant]
JP 2017223644A · 2017 [cited by applicant]
JP 2019105624A · 2019 [cited by applicant]
WO 2019225058A1 · 2019 [cited by applicant]
International Search Report dated Sep. 6, 2022 issued in International Patent Application No. PCT/JP2022/026883, with English translation. [cited by applicant]
M. Nomura et al., “Impeded thermal transport in Si multiscale hierarchical architectures with phononic crystal nanostructures”, Physical Review B, vol. 91, 205422 (2015), pp. 1-6. [cited by applicant]