Sensor device and driving method thereof
A sensor device includes: a sensor layer including first sensors, and second sensors forming a capacitance with the first sensors; and a sensor driver configured to transmit driving signals to the first sensors, and receive sensing signals from the second sensors, during a touch sensing period. The sensor driver is further configured to transmit first driving signals to at least some of the first sensors, and second driving signals to at least some of the second sensors, during an object sensing period different from the touch sensing period. During the object sensing period, the first driving signals applied to the first sensors located at an edge of the sensor layer are different from the first driving signals applied to the first sensors located at a central portion of the sensor layer in at least one of a voltage level, frequency, phase, or code.
1 . A sensor device comprising:
a sensor layer including first sensors, and second sensors forming a capacitance with the first sensors; and
a sensor driver configured to transmit driving signals to the first sensors, and receive sensing signals from the second sensors, during a touch sensing period,
wherein the sensor driver is further configured to transmit first driving signals to at least some of the first sensors, and second driving signals to at least some of the second sensors, during an object sensing period different from the touch sensing period, and
wherein during the object sensing period, the first driving signals applied to the first sensors located at an edge of the sensor layer are different from the first driving signals applied to the first sensors located at a central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, or a code.
2 . The sensor device of claim 1 , wherein during the object sensing period, the second driving signals applied to the second sensors located at the edge of the sensor layer are different from the second driving signals applied to the second sensors located at the central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, or a code.
3 . The sensor device of claim 2 , wherein during the object sensing period, the first driving signals applied to the first sensors located at the edge of the sensor layer have a higher signal-to-noise ratio (SNR) than that of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
4 . The sensor device of claim 2 , wherein during the object sensing period, voltage levels of the first driving signals applied to the first sensors located at the edge of the sensor layer are different from voltage levels of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
5 . The sensor device of claim 4 , wherein during the object sensing period, voltage levels of the first driving signals applied to the first sensors located at the edge of the sensor layer are greater than voltage levels of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
6 . The sensor device of claim 2 , wherein during the object sensing period, phases of the first driving signals applied to the first sensors located at the edge of the sensor layer are different from phases of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
7 . The sensor device of claim 6 , wherein during the object sensing period, a phase difference between the first driving signals applied to the first sensors located at the edge of the sensor layer is smaller than a phase difference between the first driving signals applied to the first sensors located at the central portion of the sensor layer.
8 . The sensor device of claim 6 , wherein during the object sensing period, phases of the first driving signals applied to the first sensors located at the edge of the sensor layer are set to cause more constructive interference than the phases of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
9 . The sensor device of claim 2 , wherein during the object sensing period, frequencies of the first driving signals applied to the first sensors located at the edge of the sensor layer are different from frequencies of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
10 . The sensor device of claim 9 , wherein during the object sensing period, frequencies of the first driving signals applied to the first sensors located at the edge of the sensor layer are set to cause more constructive interference than the frequencies of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
11 . The sensor device of claim 2 , wherein during the object sensing period, codes of the first driving signals applied to the first sensors located at the edge of the sensor layer are different from codes of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
12 . The sensor device of claim 9 , wherein during the object sensing period, codes of the first driving signals applied to the first sensors located at the edge of the sensor layer cause more constructive interference than those of codes of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
13 . A driving method of a sensor device comprising a sensor layer including first sensors, and second sensors forming a capacitance with the first sensors, the method comprising:
applying first driving signals to at least some of the first sensors, the first driving signals applied to the first sensors located at an edge of the sensor layer being different from the first driving signals applied to the first sensors located at a central portion of the sensor layer in at least one of a voltage, a frequency, a phase, or a code; and
applying second driving signals to at least some of the second sensors, the second driving signals applied to the second sensors located at the edge of the sensor layer being different from the second driving signals applied to the second sensors located at the central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, or a code.
14 . The driving method of the sensor device of claim 13 , wherein the first driving signals applied to the first sensors located at the edge of the sensor layer have a higher signal-to-noise ratio (SNR) than that of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
15 . The driving method of the sensor device of claim 13 , wherein voltage levels of the first driving signals applied to the first sensors located at the edge of the sensor layer are greater than voltage levels of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
16 . The driving method of the sensor device of claim 13 , wherein a phase difference between the first driving signals applied to the first sensors located at the edge of the sensor layer is smaller than a phase difference between the first driving signals applied to the first sensors located at the central portion of the sensor layer.
17 . The driving method of the sensor device of claim 13 , wherein phases of the first driving signals applied to the first sensors located at the edge of the sensor layer are set to cause more constructive interference than phases of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
18 . The driving method of the sensor device of claim 13 , wherein frequencies of the first driving signals applied to the first sensors located at the edge of the sensor layer are set to cause more constructive interference than frequencies of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
19 . The driving method of the sensor device of claim 13 , wherein codes of the first driving signals applied to the first sensors located at the edge of the sensor layer are set to cause more constructive interference than codes of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
20 . The driving method of the sensor device of claim 13 , wherein the at least one of the voltage, the frequency, the phase, or the code of the first driving signals applied to the first sensors located at the edge of the sensor layer cause more constructive interference than the at least one of the voltage, the frequency, the phase, or the code of the first driving signals applied to the first sensors located at the central portion of the sensor layer.
21 . A sensor device comprising:
a sensor layer including first sensors, and second sensors crossing the first sensors; and
a sensor driver configured to transmit first driving signals to the first sensors, and receive sensing signals from the second sensors, during a first sensing period,
wherein the sensor driver is configured to transmit second driving signals different from the first driving signals to at least two of the first sensors during a second sensing period different from the first sensing period, and
wherein during the second sensing period, the second driving signal applied to the first sensor located at an edge of the sensor layer is different from the second driving signals applied to the first sensor located at a central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, or a code.
22 . The sensor device of claim 21 , wherein:
the first driving signals are signals used to detect a position of a first object; and
the second driving signals are signals used to detect a position of a second object that is different from the first object.