Protective gas flow during wafer dechucking in PVD chamber
Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.
1 . A method of substrate processing, comprising:
flowing a purge gas into a substrate processing chamber housing a substrate clamped to a chuck with a process kit surrounding the substrate and the chuck, wherein the purge gas is introduced at a location above the substrate, wherein the purge gas flows over an upper surface of the substrate, around an outer edge of the substrate, and between the chuck and the process kit towards an outlet of the substrate processing chamber;
dechucking the substrate while the purge gas is flowing;
stopping the flow of the purge gas into the substrate processing chamber after dechucking the substrate; and
transferring the dechucked substrate out of the substrate processing chamber while the flow of the purge gas is stopped.
2 . The method of claim 1 , wherein the purge gas is discharged from the substrate processing chamber at a location below the substrate.
3 . The method of claim 1 , wherein the substrate is dechucked while the purge gas is flowing from above the substrate to below the substrate.
4 . The method of claim 1 , wherein a flow rate of the purge gas is controlled based on a pressure in the substrate processing chamber.
5 . The method of claim 4 , wherein the flow rate of the purge gas is controlled to maintain the pressure less than 150 m Torr.
6 . The method of claim 1 , further comprising lifting the substrate off of the chuck.
7 . An apparatus for substrate processing, comprising:
a processing chamber having an inlet for directing a flow of a purge gas into the processing chamber and an outlet for discharging the purge gas from the processing chamber;
a chuck disposed in the processing chamber and being configured to support a substrate housed in the processing chamber and to chuck and dechuck the substrate, wherein the inlet is located above the chuck and the outlet is located below the chuck, wherein a gas flow path is defined from the inlet, around the chuck, and to the outlet; and
a controller configured to:
flow the purge gas into the processing chamber while the substrate is clamped to the chuck with a process kit surrounding the substrate and the chuck, wherein the purge gas is introduced at a location above the substrate, wherein the purge gas flows over an upper surface of the substrate, around an outer edge of the substrate, and between the chuck and the process kit towards the outlet of the processing chamber;
dechuck the substrate while the purge gas is flowing;
stop the flow of the purge gas into the processing chamber after dechucking the substrate; and
transfer the dechucked substrate out of the processing chamber while the flow of the purge gas is stopped.
8 . The apparatus of claim 7 , wherein the processing chamber includes another inlet located below the chuck and above the outlet.
9 . The apparatus of claim 7 , further comprising the process kit surrounding the chuck.
10 . The apparatus of claim 7 , further comprising lift pins extending through the chuck configured to lift the substrate away from the chuck.
11 . A system for processing substrates, comprising:
an apparatus for substrate processing, comprising:
a processing chamber having an inlet for directing a flow of a purge gas into the processing chamber and an outlet for discharging the purge gas from the processing chamber; and
a chuck disposed in the processing chamber and being configured to support a substrate housed in the processing chamber and to chuck and dechuck the substrate, wherein the inlet is located above the chuck and the outlet is located below the chuck, wherein a gas flow path is defined from the inlet, around the chuck, and to the outlet; and
a controller configured to:
control the flow of the purge gas through the inlet into the processing chamber based on a pressure inside the processing chamber while dechucking the substrate;
flow the purge gas into the processing chamber while the substrate is clamped to the chuck with a process kit surrounding the substrate and the chuck, wherein the purge gas is introduced at a location above the substrate, wherein the purge gas flows over an upper surface of the substrate, around an outer edge of the substrate, and between the chuck and the process kit towards the outlet of the processing chamber;
dechuck the substrate while the purge gas is flowing;
stop the flow of the purge gas into the processing chamber after dechucking the substrate; and
transfer the dechucked substrate out of the processing chamber while the flow of the purge gas is stopped.
12 . The system of claim 11 , wherein the processing chamber includes another inlet located below the chuck and above the outlet.
13 . The system of claim 11 , further comprising the process kit surrounding the chuck.
14 . The system of claim 11 , further comprising lift pins extending through the chuck configured to lift the substrate away from the chuck.
15 . The system of claim 11 , wherein the purge gas is process compatible.
16 . The system of claim 11 , wherein the controller comprises a flow controller configured to control a flow rate of the purge gas through the inlet and into the processing chamber.
17 . The system of claim 16 , wherein the flow controller is configured to control the flow rate of the purge gas to maintain the pressure inside the processing chamber below a predetermined value.
18 . The system of claim 17 , wherein the predetermined value is 150 m Torr.