Granted Patent B2

US 12,553,771 · App. 17/777,805 · Granted Feb 17, 2026

Inventors: Steven R. J. Brueck (Albuquerque, NM); Payman Zarkesh-Ha (Albuquerque, NM); Alexander Neumann (Albuquerque, NM)

G01J3/24G01J3/0256G01J3/04G01J3/1895G02B6/42G02B6/4215

Abstract

Claims (28)

1 . A spectral sensor comprising:

a planar waveguide on a semiconductor substrate;

a restriction mechanism that restricts a range of angles of incidence of light;

a transversely chirped input grating comprising grating lines that are tilted with respect to each other, such that a period of the transversely chirped input grating varies along the grating lines of the transversely chirped input grating, formed to couple incident light into the planar waveguide to provide a spatially and spectrally selective coupling of incident light into the planar waveguide;

a propagation region to filter out light that is not coupled into the planar waveguide;

a detector array arranged on the opposite side of the propagation region from the chirped input grating;

a transversely chirped output grating comprising grating lines that are tilted with respect to each other, such that a period of the transversely chirped output grating varies along the grating lines of the transversely chirped output grating and differently than the transversely chirped input grating, that couples the light from the planar waveguide to the detector array; and

an electrical circuit to readout output signals from the detector array.

2 . The spectral sensor of claim 1 , further comprising a light block to shield the detector array from incident light that is not coupled into the planar waveguide.

3 . The spectral sensor of claim 1 , wherein the planar waveguide comprises a bottom cladding, a waveguide core, and a top cladding.

4 . The spectral sensor of claim 3 , wherein the top cladding and the bottom cladding are comprised of silicon dioxide and the waveguide core is comprised of silicon nitride.

5 . The spectral sensor of claim 1 , wherein additional electronics is fabricated along with the detector array for readout of the detection signals.

6 . The spectral sensor of claim 1 , wherein the detector array is fabricated in a different semiconductor material that is epitaxially grown on the semiconductor substrate.

7 . The spectral sensor of claim 1 , wherein the detector array is fabricated in a different material system from that of the substrate and is wafer bonded to the substrate.

8 . The spectral sensor of claim 1 , wherein the detector array is electrically connected to electronics fabricated in the substrate that generates one or more electrical signals corresponding to a spectrum of the incident light which is incident at a fixed angle.

9 . A method of forming a spectral sensor comprising:

providing a semiconductor substrate;

forming a detector array on the semiconductor substrate;

forming a planar waveguide on the semiconductor substrate;

forming a transversely chirped input grating comprising grating lines that are tilted with respect to each other, such that a period of the transversely chirped input grating varies along the grating lines of the transversely chirped input grating, to couple incident light into the planar waveguide, wherein the transversely chirped input grating provides a spatially and spectrally selective coupling of incident light into the planar waveguide;

forming a propagation region to filter out light that is not coupled into the planar waveguide;

forming a restriction mechanism that restricts a range of angles of incidence of light impinging onto the chirped input grating;

forming a transversely output grating comprising grating lines that are tilted with respect to each other, such that a period of the transversely chirped output grating varies along the grating lines of the transversely chirped output grating and differently than the transversely chirped input grating, that couples the light from the planar waveguide to the detector array; and

forming an electrical circuit to readout output signals from the detector array.

10 . The method of claim 9 , further comprising forming a light block to shield the detector array from incident light scattered into the detector array that is not coupled into the planar waveguide.

11 . The method of claim 9 , wherein the detector array is fabricated in the semiconductor substrate.

12 . The method of claim 9 , wherein the detector array and associated electronics is fabricated in a separate chip, is mounted atop the waveguide, and the output grating is fabricated near the waveguide to couple light propagating in the waveguide to the detector array.

13 . The method of claim 9 , wherein the detector array is fabricated in a semiconductor material that is wafer bonded to the substrate.

Assignments (1)

Continuity (2)

References Cited (56)