IP Library › Granted Patent US 12,555,707
Granted Patent B2
US 12,555,707 · App. 18/560,607 · Granted Feb 17, 2026

Thermistor sintered body and method for manufacturing thermistor sintered body

Inventors: Kazumasa Nakamura (Saitama, JP); Noriyuki Nakayama (Saitama, JP); Ikuo Yanase (Saitama, JP)
Assignee: SHIBAURA ELECTRONICS CO., LTD.
H01C7/041B28B1/20H01C17/00
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,555,707
App. No.
18/560,607
Granted
Feb 17, 2026
Kind
B2
Abstract

A thermistor sintered body has a thickness in a range of 1 μm to 100 μm and an area in a range of 1 mm 2 to 10 mm 2 , and is composed of a single body of a sintered body having a composition of NiMn 2 O 4 . This thermistor sintered body can be manufactured by a first step of dropping a raw material liquid RL onto a surface of a substrate rotatably supported, a second step of rotating the substrate with the dropped raw material liquid RL and spreading the raw material liquid RL, a third step of forming a sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid RL and the substrate on which the raw material liquid RL has been placed, and a fourth step of separating the sintered body from the substrate.

Claims (32)

1 . A thermistor sintered body, wherein the thermistor sintered body has a thickness in a range of 1 μm to 100 μm and an area in a range of 1 mm 2 to 10 mm 2 , and the thermistor sintered body is composed of a single body of a sintered body having a composition of NiMn 2 O 4 , wherein in the thermistor sintered body, 40% to 80% of Mn in the NiMn 2 O 4 is substituted with Fe, and the thermistor sintered body has a relative density of 90% or more.

2 . The thermistor sintered body according to claim 1 , wherein:

the thickness is in a range of 10 μm to 50 μm; and

the area is in a range of 2 mm 2 to 5 mm 2 .

3 . A manufacturing method of a thermistor sintered body according to claim 1 , the manufacturing method comprising:

a first step of dropping a raw material liquid onto a surface of a rotatably supported substrate;

a second step of rotating the substrate with the dropped raw material liquid and spreading the raw material liquid;

a third step of forming the sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid and the substrate on which the raw material liquid has been placed;

and a fourth step of separating the sintered body from the substrate.

4 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein the third step is performed after repeating the first step and the second step a plurality of times.

5 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein in the fourth step, the sintered body is separated from the substrate based on a difference in linear expansion coefficient between the sintered body and the substrate.

6 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein in the fourth step, the sintered body is separated from the substrate by selectively dissolving the substrate.

7 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein a thermistor joined body, in which the sintered body is formed on the surface of the substrate, is cut and divided in a grid pattern when viewed from above in order to generate a plurality of thermistor divided bodies; and

wherein the sintered body is separated from the substrate by selectively dissolving a boundary portion in each of the plurality of generated thermistor divided bodies, the boundary portion being located between the sintered body and the substrate.

8 . The manufacturing method of the thermistor sintered body according to claim 5 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated.

9 . The manufacturing method of the thermistor sintered body according to claim 3 further comprising:

recovering the sintered body separated from the substrate by magnetic force.

10 . The thermistor sintered body according to claim 2 , wherein 20% to 90% of Mn in the NiMn 2 O 4 is substituted with Fe.

11 . A manufacturing method of a thermistor sintered body according to claim 2 , the manufacturing method comprising:

a first step of dropping a raw material liquid onto a surface of a rotatably supported substrate;

a second step of rotating the substrate with the dropped raw material liquid and spreading the raw material liquid;

a third step of forming the sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid and the substrate on which the raw material liquid has been placed; and

a fourth step of separating the sintered body from the substrate.

12 . The manufacturing method of the thermistor sintered body according to claim 4 , wherein in the fourth step, the sintered body is separated from the substrate based on a difference in linear expansion coefficient between the sintered body and the substrate.

13 . The manufacturing method of the thermistor sintered body according to claim 4 , wherein in the fourth step, the sintered body is separated from the substrate by selectively dissolving the substrate.

14 . The manufacturing method of the thermistor sintered body according to claim 4 ,

wherein a thermistor joined body, in which the sintered body is formed on the surface of the substrate, is cut and divided in a grid pattern when viewed from above in order to generate a plurality of thermistor divided bodies; and

wherein the sintered body is separated from the substrate by selectively dissolving a boundary portion in each of the plurality of generated thermistor divided bodies, the boundary portion being located between the sintered body and the substrate.

15 . The manufacturing method of the thermistor sintered body according to claim 6 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated.

16 . The manufacturing method of the thermistor sintered body according to claim 7 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated.

17 . The manufacturing method of the thermistor sintered body according to claim 5 further comprising recovering the sintered body separated from the substrate by magnetic force.

18 . The manufacturing method of the thermistor sintered body according to claim 6 further comprising recovering the sintered body separated from the substrate by magnetic force.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2024
From: NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY
To: SHIBAURA ELECTRONICS CO., LTD.
Reel/Frame 066104/0380 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 28, 2023
From: NAKAMURA, KAZUMASA; NAKAYAMA, NORIYUKI; YANASE, IKUO
To: SHIBAURA ELECTRONICS CO., LTD.; NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY
Reel/Frame 065678/0740 →
Continuity (1)
Related Publication 20240257999A1 · Aug 1, 2024
References Cited (12)
US 20060130956A1 · White et al. · 2006 [cited by applicant]
US 20100259358A1 · Ryu · 2010 [cited by applicant]
JP S6466926A · 1989 [cited by applicant]
JP S6477101A · 1989 [cited by applicant]
JP H04247603A · 1992 [cited by applicant]
JP H06263518A · 1994 [cited by applicant]
JP 2005279953A · 2005 [cited by applicant]
JP 2006179911A · 2006 [cited by applicant]
JP 5180987B2 · 2013 [cited by applicant]
Feltz et al, WO 9322255 Nov. 1993. [cited by examiner]
International Search Report for PCT/JP2021/041493 dated Feb. 1, 2022. [cited by applicant]
Written Opinion for PCT/JP2021/041493 dated Feb. 1, 2022. [cited by applicant]