Plasma processing apparatus and semiconductor device manufacturing method
A plasma processing apparatus generating plasma by electromagnetic waves supplied into a processing container to process a substrate, includes an upper electrode disposed in an upper portion of the processing container, a power supply member connected to the upper electrode to supply electromagnetic waves to the upper electrode, a first shield member and a second shield member configured to electrically shield the upper electrode and the power supply member, a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating inside thereof, and a conductive member covering a first end of the insulating member and electrically interconnecting the first shield member and the second shield member. The power supply member passes through an inner space in the insulating member and supplies electromagnetic waves to the upper electrode.
1 . A plasma processing apparatus which generates plasma by electromagnetic waves supplied into a processing container to perform processing of a substrate, the plasma processing apparatus comprising:
an upper electrode disposed in an upper portion of the processing container;
a power supply member which is connected to the upper electrode to supply the electromagnetic waves to the upper electrode;
a first shield member configured to electrically shield the upper electrode and the power supply member;
a second shield member configured to electrically shield the upper electrode and the power supply member;
a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating an inside of the ring-shaped insulating member; and
a conductive member covering a first end portion of the insulating member and electrically interconnecting the first shield member to the second shield member,
wherein the power supply member passes through an inner space in the insulating member and supplies the electromagnetic waves to the upper electrode.
2 . The plasma processing apparatus of claim 1 , wherein the first end portion of the insulating member is in direct contact with both the first shield member and the second shield member, and a second end of the insulating member is in direct contact with the upper electrode.
3 . The plasma processing apparatus of claim 2 , wherein the electromagnetic waves are electromagnetic waves in a VHF band or UHF band.
4 . The plasma processing apparatus of claim 3 , wherein the electromagnetic waves have a frequency of 100 MHz or higher and 800 MHz or lower.
5 . The plasma processing apparatus of claim 4 , wherein the power supply member and the insulating member are configured to share a central axis.
6 . The plasma processing apparatus of claim 5 , wherein the plurality of gas through-holes are provided rotationally symmetrically with respect to the central axis.
7 . The plasma-processing apparatus of claim 6 , further comprising:
a shower head including a gas path communicating with the plurality of gas through-holes under the upper electrode.
8 . The plasma processing apparatus of claim 7 , wherein the shower head is partitioned into a first region and a second region formed around an outer periphery of the first region,
wherein some of the plurality of gas through-holes communicate with the first region, and
wherein remaining ones of the plurality of gas through-holes communicate with the second region.
9 . The plasma processing apparatus of claim 8 , wherein the plurality of gas through-holes has a diameter of 6 mm or less.
10 . The plasma processing apparatus of claim 9 , wherein the insulating member has an inner diameter of 150 mm or more.
11 . A method of manufacturing a semiconductor device by using the plasma processing apparatus set forth in claim 1 , the method comprising:
providing a substrate within the processing container of the plasma processing apparatus; and
plasma-processing the substrate within the processing container to form the semiconductor device on the substrate thereby.
12 . The plasma processing apparatus of claim 1 , wherein the electromagnetic waves are electromagnetic waves in a VHF band or UHF band.
13 . The plasma processing apparatus of claim 1 , wherein the power supply member and the insulating member are configured to share a central axis.
14 . The plasma-processing apparatus of claim 1 , further comprising:
a shower head including a gas path communicating with the plurality of gas through-holes under the upper electrode.
15 . The plasma processing apparatus of claim 1 , wherein the plurality of gas through-holes has a diameter of 6 mm or less.
16 . The plasma processing apparatus of claim 1 , wherein the insulating member has an inner diameter of 150 mm or more.