IP Library › Granted Patent US 12,557,249
Granted Patent B2
US 12,557,249 · App. 18/469,958 · Granted Feb 17, 2026

Heat radiation structure, electronic device, and heat transfer structure

Inventors: Masahiro Kitamura (Yokohama, JP); Takuroh Kamimura (Yokohama, JP); Ryota Watanabe (Yokohama, JP); Junki Hashiba (Yokohama, JP)
Assignee: LENOVO (SINGAPORE) PTE. LTD.
H05K7/2039
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Quick Facts
Patent No.
US 12,557,249
App. No.
18/469,958
Granted
Feb 17, 2026
Kind
B2
Abstract

A heat radiation structure includes a mesh that abuts on a surface of a die, and a vapor chamber that interposes the mesh between the surface of the die and the vapor chamber. The mesh includes a heat generation element abutting range portion that is provided at a central portion of the mesh, is impregnated with a liquid metal, and abuts on the surface of the die to receive heat, and a pair of heat generation element non-abutting range portions that continuously extends from both sides of the heat generation element abutting range portion and does not abut on the surface of the die. Each of the pair of heat generation element non-abutting range portions is fixed to the vapor chamber via a sheet material. Each of a pair of the heat generation element non-abutting range portions is interposed between a pair of the sheet materials.

Claims (20)

1 . A heat radiation structure for an electric component that generates heat, the heat radiation structure comprising:

a porous material that abuts on a surface of the electric component; and

a heat radiation element that interposes the porous material between a surface of the electric component and the heat radiation element,

wherein the porous material includes:

a heat generation element abutting range portion that is at a central portion of the porous material, is impregnated with a heat transfer fluid, and abuts on the surface of the electric component to receive heat; and

a pair of heat generation element non-abutting range portions that continuously extends from both sides of the heat generation element abutting range portion and does not abut on the surface of the electric component, wherein each heat generation element non-abutting range portion is fixed to the heat radiation element via a sheet material, wherein the heat radiation structure further comprises:

a board;

a semiconductor chip mounted on the board, wherein the semiconductor chip includes a substrate and a die, and the electric component is the die; and

a sponge that blocks a space that is between the heat radiation element and the substrate and that is along a periphery of the die,

wherein the sponge abuts on the heat radiation element via a portion of the sheet material that does not overlap the porous material.

2 . The heat radiation structure according to claim 1 ,

wherein each heat generation element non-abutting range portion is interposed between a pair of the sheet materials.

3 . The heat radiation structure according to claim 1 ,

wherein the heat generation element non-abutting range portion and the sheet material are fixed with an adhesion material, and

the sheet material and the heat radiation element are fixed with a pressure-sensitive adhesion material.

4 . The heat radiation structure according to claim 1 ,

wherein a rib is on an edge of the substrate, and

the sponge is between the rib and the heat radiation element.

5 . The heat radiation structure according to claim 1 ,

wherein the porous material is a mesh.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2023
From: KITAMURA, MASAHIRO; KAMIMURA, TAKUROH; WATANABE, RYOTA; HASHIBA, JUNKI
To: LENOVO (SINGAPORE) PTE. LTD.
Reel/Frame 064954/0838 →
Priority Claims (1)
JP 2022-161010 · Oct 5, 2022 · national
Continuity (1)
Related Publication 20240121916A1 · Apr 11, 2024
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