Semiconductor device
A semiconductor device includes: a substrate including a trench; a bottom gate electrode suitable for gap-filling a lower portion of the trench and including a silicon-doped first metal nitride; and a top gate electrode formed over the bottom gate electrode, and including a silicon-doped second metal nitride having a higher silicon content than a silicon content of the bottom gate electrode and having a higher ratio of a metal content to a nitrogen content than a ratio of a metal content to a nitrogen content of the bottom gate electrode.
1 . A semiconductor device, comprising:
a substrate including a trench;
a bottom gate electrode suitable for gap-filling a lower portion of the trench and including a silicon-doped first metal nitride; and
a top gate electrode formed over the bottom gate electrode, and including a silicon-doped second metal nitride having a higher silicon content than a silicon content of the bottom gate electrode and having a higher ratio of a metal content to a nitrogen content than a ratio of a metal content to a nitrogen content of the bottom gate electrode.
2 . The semiconductor device of claim 1 , wherein the silicon-doped first metal nitride has a silicon content of greater than 0% and less than 1%.
3 . The semiconductor device of claim 1 , wherein the ratio of the metal content to the nitrogen content of the silicon-doped first metal nitride is 1 or more.
4 . The semiconductor device of claim 1 , wherein the silicon-doped first metal nitride has:
a ratio of a metal content to a nitrogen content of 1 or more, and
a silicon content of greater than 0% and less than 1%.
5 . The semiconductor device of claim 1 , wherein the silicon-doped second metal nitride has a silicon content of greater than 1% and less than 5%.
6 . The semiconductor device of claim 1 , wherein the silicon-doped second metal nitride has a higher ratio of a crystal grain direction <100> to a crystal grain direction <111> than a higher ratio of a crystal grain direction <100> to a crystal grain direction <111> of the silicon-doped first metal nitride.
7 . The semiconductor device of claim 1 , wherein the silicon-doped first metal nitride and the silicon-doped second metal nitride include titanium nitride.
8 . The semiconductor device of claim 1 , wherein the top gate electrode includes:
a first top gate electrode of a liner type and
a second top gate electrode of a bulk type which is formed over the first top gate electrode and has bottom and side surfaces covered by the first top gate electrode.
9 . The semiconductor device of claim 8 , wherein the first top gate electrode is the silicon-doped second metal nitride.
10 . The semiconductor device of claim 8 , wherein the second top gate electrode includes a lower resistance material than the first top gate electrode.
11 . The semiconductor device of claim 8 , wherein the second top gate electrode includes the same material as a material of the bottom gate electrode.
12 . The semiconductor device of claim 8 , wherein the second top gate electrode includes titanium nitride or molybdenum.
13 . A semiconductor device, comprising:
a substrate including a trench;
a bottom gate electrode suitable for gap-filling a lower portion of the trench; and
a top gate electrode formed over the bottom gate electrode, and including a silicon-doped metal nitride having a higher metal content than a nitrogen content.
14 . The semiconductor device of claim 13 , wherein the silicon-doped metal nitride has a silicon content of greater than 1% and less than 5%.
15 . The semiconductor device of claim 13 , wherein the silicon-doped metal nitride has a ratio of a metal content to a nitrogen content of greater than 1, and
a silicon content of greater than 1% and less than 5%.
16 . The semiconductor device of claim 13 , wherein the silicon-doped metal nitride includes silicon-doped titanium nitride.
17 . The semiconductor device of claim 13 , wherein the top gate electrode includes:
a first top gate electrode of a liner type and
a second top gate electrode of a bulk type which is formed over the first top gate electrode and has bottom and side surfaces covered by the first top gate electrode.
18 . The semiconductor device of claim 17 , wherein the first top gate electrode is the silicon-doped metal nitride.
19 . The semiconductor device of claim 17 , wherein the second top gate electrode includes a lower resistance material than the first top gate electrode.
20 . The semiconductor device of claim 17 , wherein the second top gate electrode includes the same material as a material of the bottom gate electrode.
21 . The semiconductor device of claim 17 , wherein the second top gate electrode includes titanium nitride or molybdenum.
22 . The semiconductor device of claim 13 , wherein the bottom gate electrode includes:
a single layer structure or a stacked structure of one or more selected from a group including molybdenum, ruthenium, a stacked structure of molybdenum nitride and molybdenum, and a stacked structure of titanium nitride and molybdenum.