Image sensor in which pixels have substantially uniform heights and a method of fabricating the same
An image sensor includes: a substrate including an active region and a peripheral region, unit pixels disposed on the active region, device isolation patterns defining the unit pixels disposed on the active region, a light-shield layer on the substrate and having a grid structure defining optical transmission regions, color filters on the light-shield layer, and microlenses on the color filters. The device isolation patterns include first device isolation patterns and a second device isolation pattern, wherein the first device isolation patterns are disposed on a central portion of the active region, and the second device isolation pattern is between the first device isolation patterns and the peripheral region. The first device isolation patterns have a first top surface substantially parallel to a bottom surface of the substrate. The second device isolation pattern has a second top surface, wherein the second top surface approaches the bottom surface of the substrate in a direction toward the peripheral region.
1 . An image sensor, comprising:
a substrate that includes an active region and a peripheral region;
a plurality of unit pixels disposed on the active region;
a plurality of device isolation patterns, wherein the plurality of unit pixels is defined by the plurality of device isolation patterns:
a light-shield layer disposed on the substrate and having a grid structure, wherein a plurality of optical transmission regions is defined based on the grid structure;
a plurality of color filters disposed on the light-shield layer; and
a plurality of microlenses disposed on the color filters,
wherein the device isolation patterns include a plurality of first device isolation patterns and a second device isolation pattern, wherein the first device isolation patterns are disposed on a central portion of the active region, and the second device isolation pattern is disposed between the first device isolation patterns and the peripheral region,
wherein each of the plurality of first device isolation patterns has a first top surface parallel to a bottom surface of the substrate; and
wherein the second device isolation pattern has a second top surface,
wherein the second top surface of the second sub-device isolation pattern has a lowermost end that is nearest to the peripheral region, and an uppermost end that stands opposite to the peripheral region, and
wherein the second top surface approaches the bottom surface of the substrate in a direction to the lowermost end from the uppermost end toward the peripheral region.
2 . The image sensor of claim 1 , wherein an uppermost end of the second top surface of the second device isolation patter is at a level the same as a level of the first top surface of a first device isolation pattern of the plurality of device isolation patterns.
3 . The image sensor of claim 2 , wherein a height difference between a height of the uppermost end of the second top surface of the second device isolation pattern and a height of the lowermost end of the second top surface of the second device isolation pattern ranges from about 1 μm to about 2 μm.
4 . The image sensor of claim 1 , wherein the first top surface of each of the first device isolation patterns is at a level the same as a level of a top surface of the substrate on the peripheral region.
5 . The image sensor of claim 1 , wherein
the substrate has a recess on a top surface of the substrate on the peripheral region, and
the recess is disposed on the second device isolation pattern at a boundary between the peripheral region and the active region.
6 . The image sensor of claim 5 , wherein
a bottom surface of the recess approaches the bottom surface of the substrate in a direction toward the active region, and
a lowermost end of the bottom surface of the recess is at a level the same as a level of the lowermost end of the second top surface of the second device isolation pattern.
7 . The image sensor of claim 1 , wherein a top surface of the substrate on the peripheral region is parallel to the bottom surface of the substrate.
8 . The image sensor of claim 1 , wherein the substrate includes silicon (Si), and the device isolation patterns include silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON).
9 . The image sensor of claim 1 , wherein the device isolation patterns penetrate the substrate, and each of the device isolation patterns includes:
a conductive isolation pattern; and
a dielectric isolation pattern disposed between the conductive isolation pattern and the substrate.
10 . The image sensor of claim 1 , wherein each of the plurality of unit pixels includes a photoelectric conversion region.
11 . The image sensor of claim 1 , further comprising:
a plurality of transfer transistors and a plurality of logic transistors disposed on the substrate; and
a conductive line pattern disposed in an interlayer dielectric layer and electrically connected to the transfer transistors and the logic transistors, wherein the interlayer dielectric layer is disposed on the substrate.
12 . An image sensor, comprising:
a substrate including an active region and a peripheral region at least partially surrounding the active region;
a plurality of device isolation patterns extending from a top surface of the substrate and penetrating the substrate on the active region, wherein a plurality of unit pixels is disposed between the plurality of device isolation patterns;
a plurality of photoelectric conversion regions in the substrate and at the plurality of unit pixels;
a plurality of impurity regions in the substrate and respectively at the plurality of unit pixels, wherein the plurality of impurity regions is adjacent to a bottom surface of the substrate;
a conductive line pattern in the substrate or on the bottom surface of the substrate, wherein the conductive line pattern vertically overlaps the device isolation pattern;
a color filter disposed on the top surface of the substrate; and
a microlens array disposed on the color filter,
wherein a plurality of first device isolation patterns that are outermost positioned among the device isolation patterns have a first top surface at a level lower than a level of the top surface of the substrate on the peripheral region, and
wherein each of a plurality of second device isolation patterns of the device isolation patterns has a second top surface on the same plane as the top surface of the substrate on the peripheral region, wherein the second device isolation patterns are in an area surrounded by the first device isolation patterns.
13 . The image sensor of claim 12 ,
wherein the first top surface of the first device isolation patterns approaches the bottom surface of the substrate in a direction toward the peripheral region, and
wherein the second top surface of the second device isolation patterns is parallel to the bottom surface of the substrate.
14 . The image sensor of claim 13 , wherein an uppermost end of the first top surface of the first device isolation pattern is at a level the same as a level of the second top surface of the second device isolation pattern.
15 . The image sensor of claim 14 , wherein a height difference between the height of uppermost end of the first top surface of the second device isolation pattern and the height of a lowermost end of the first top surface of the first device isolation pattern ranges from about 1 μm to about 14 μm.
16 . The image sensor of claim 13 , wherein the top surface of the substrate has a recess, and
a bottom surface of the recess becomes increasingly distant from the bottom surface of the substrate as the recess extends away from a lowermost end of the first top surface, of each of the plurality of first device isolation patterns, in a direction from the active region toward the peripheral region.
17 . The image sensor of claim 12 , wherein each of the device isolation patterns includes:
a dielectric isolation pattern; and
a conductive isolation pattern in the dielectric isolation pattern.