Image-sensor structure and method of making thereof
Some embodiments relate to an integrated circuit (IC) image sensor having an array of pixel elements. Each pixel element of the array includes a semiconductor substrate having a first surface and an opposite second surface, a photodetector disposed within the substrate, and a portion of an interconnect structure disposed over the first surface of the semiconductor substrate. The interconnect structure includes conductive interconnects embedded in dielectric layers. The portion of the interconnect structure includes a photodetector gate electrode over the photodetector, and a capacitor. The pixel element has a footprint over the first surface. The capacitor has a footprint over the first surface. The footprint of the capacitor covers more than half of the footprint of the pixel element, which provides increased protection to the photodetector during manufacturing.
1 . An integrated circuit (IC) image sensor comprising:
an array of pixel elements, each pixel element of the array comprising:
a semiconductor substrate having a front side and an opposite back side;
a photodetector disposed within the semiconductor substrate; and
a portion of an interconnect structure disposed on the front side of the semiconductor substrate and comprising conductive interconnects embedded in one or more dielectric layers, the portion of the interconnect structure comprising a capacitor, wherein:
the pixel element has a footprint;
the capacitor has a footprint; and
the footprint of the capacitor covers more than half of the footprint of the pixel element.
2 . The IC image sensor of claim 1 , wherein the footprint of the capacitor covers between 70% and 90% of the footprint of the pixel element.
3 . The IC image sensor of claim 1 , wherein the footprint of the capacitor covers over 90% of the footprint of the pixel element.
4 . The IC image sensor of claim 1 , wherein:
the photodetector has a footprint; and
the footprint of the capacitor covers an entirety of the footprint of the photodetector.
5 . The IC image sensor of claim 1 , wherein:
the footprint of the pixel element corresponds to an orthographic projection of the pixel element onto a surface of the front side of the semiconductor substrate;
the footprint of the capacitor corresponds to an orthographic projection of the capacitor onto the surface of the front side of the semiconductor substrate; and
the footprint of the photodetector corresponds to an orthographic projection of the photodetector onto the surface of the front side of the semiconductor substrate.
6 . The IC image sensor of claim 1 , wherein the capacitor is a metal-insulator-metal (MIM) capacitor comprising two metal plates separated by an insulator layer.
7 . The IC image sensor of claim 1 , wherein:
the IC image sensor comprises a photodetector gate electrode over the photodetector;
the photodetector gate electrode has a footprint; and
the photodetector gate electrode footprint is one of a rectangle, a rounded rectangle, a triangle, and a hexagon.
8 . The IC image sensor of claim 1 , wherein:
the image sensor is a backlit image sensor;
each pixel element of the array further comprises:
an optical lens element on the back side of the semiconductor substrate; and
a color-filter element on the back side of the semiconductor substrate disposed between the optical lens element and the photodetector.
9 . The IC image sensor of claim 1 , wherein each pixel element further comprises an isolation feature in the semiconductor substrate separating the pixel element from adjoining pixel elements of the array.
10 . The IC image sensor of claim 1 , further comprising a second IC die bonded to the interconnect structure, the second IC die comprising semiconductor devices configured to operate with the image sensor IC.
11 . An integrated circuit (IC) image sensor comprising:
an array of pixel elements, each pixel element of the array comprising:
a semiconductor substrate having a front side and an opposite back side;
a photodetector disposed within the semiconductor substrate; and
a portion of an interconnect structure disposed on the front side of the semiconductor substrate and comprising conductive interconnects embedded in one or more dielectric layers, the portion of the interconnect structure comprising a shared capacitor, wherein:
the capacitor is shared with one or more other pixel elements;
the pixel element has a footprint;
the capacitor has a footprint; and
the footprint of the capacitor covers more than half of the footprint of the corresponding pixel elements.
12 . The IC image sensor of claim 11 , wherein a pair of adjoining pixel elements in the array of pixel elements share the capacitor.
13 . The IC image sensor of claim 12 , wherein:
the pair of adjoining pixel elements also share an optical lens element; and
the pair of adjoining pixel elements form a dual photo-diode (DPD) pair configured for phase detection auto-focus.
14 . The IC image sensor of claim 11 , wherein four pixel elements of a two-by-two set of adjoining pixel elements in the array of pixel elements share the capacitor.
15 . The IC image sensor of claim 14 , wherein:
the four pixel elements of the two-by-two set also share an optical lens element; and
the four pixel elements form a quad photo-diode (QPD) set configured for phase detection auto-focus.
16 . A method for forming an integrated circuit (IC) image sensor, the method comprising:
forming a photodetector of a pixel element in a front side of a semiconductor substrate, the semiconductor substrate comprising a back side opposite the front side;
forming a photodetector gate electrode on the photodetector;
forming a conductive interconnect in a dielectric layer on the front side of the semiconductor substrate; and
forming a capacitor connected to the conductive interconnect on the front side of the semiconductor substrate, wherein:
the pixel element has a footprint;
the capacitor has a footprint; and
the footprint of the capacitor covers more than half of the footprint of the pixel element.
17 . The method of claim 16 , wherein:
the capacitor comprises an insulator interposed between a bottom electrode and a top electrode; and
forming the capacitor comprises:
depositing a first metal layer for the bottom electrode;
depositing a dielectric layer for the insulator;
depositing a second metal layer for the top electrode; and
etching the first metal layer, the dielectric layer, and the second metal layer to form the capacitor.
18 . The method of claim 17 , wherein the etching comprises dry etching with plasma.
19 . The method of claim 16 , wherein the footprint of the capacitor covers between 70% and 90% of the footprint of the pixel element.
20 . The method of claim 16 , further comprising forming corresponding color filter elements and optical lens elements on the back side of the semiconductor substrate to allow for backside-illuminated operation of the IC image sensor.