Display device and method of manufacturing the same
A display device includes a substrate including a flat area and a trench area, which is recessed from the flat area; an electrode pattern disposed on the substrate, where the electrode pattern includes a dent portion, which is bent along a profile of the trench area of the substrate; a planarization layer inserted in the dent portion; a first insulating layer covering the substrate, the electrode pattern, and the planarization layer; and a light-emitting element disposed on the first insulating layer, where the planarization layer includes an organic-inorganic composite material.
1 . A display device comprising:
a substrate including a flat area and a trench area, which is recessed from the flat area;
an electrode pattern disposed on the substrate, wherein the electrode pattern includes a dent portion, which is bent along a profile of the trench area of the substrate;
a planarization layer inserted in the dent portion;
a first insulating layer covering the substrate, the electrode pattern, and the planarization layer; and
a light-emitting element disposed on the first insulating layer,
wherein the planarization layer includes an organic-inorganic composite material.
2 . The display device of claim 1 , wherein
the organic-inorganic composite material includes an organic material and an inorganic material, and
a content of the inorganic material is greater than a content of the organic material.
3 . The display device of claim 2 , wherein
the organic material includes siloxane, and
the inorganic material includes silicon oxide (SiO 2 ).
4 . The display device of claim 1 , wherein
the electrode pattern includes an exposed surface exposed by the flat area of the substrate and the planarization layer, and
a top surface of the flat area, the exposed surface, and a top surface of the planarization layer are disposed on a same plane.
5 . The display device of claim 4 , further comprising:
a thin-film transistor disposed between the first insulating layer and the light-emitting element,
wherein a semiconductor layer of the thin-film transistor overlaps with the electrode pattern.
6 . The display device of claim 4 , wherein
the light-emitting element includes a first electrode, a light-emitting layer, which is disposed on the first electrode, and a second electrode, which is disposed on the light-emitting layer,
the display device further comprises a thin-film transistor disposed between the first insulating layer and the light-emitting element, and
the first electrode of the light-emitting element and the thin-film transistor are electrically connected to each other.
7 . The display device of claim 6 , wherein the first electrode is in direct contact with the exposed surface of the electrode pattern through a contact hole defined through the first insulating layer.
8 . The display device of claim 6 , wherein the first electrode is in direct contact with the electrode pattern through a contact hole defined through the first insulating layer and the planarization layer.
9 . The display device of claim 1 , wherein
the electrode pattern includes an exposed surface exposed by the flat area of the substrate and the planarization layer, and
the exposed surface is curved.
10 . The display device of claim 9 , wherein the electrode pattern includes copper (Cu).
11 . A display device comprising:
a first insulating layer disposed on a substrate, wherein the first insulating layer includes a flat area and a trench area, which is recessed from the flat area;
an electrode pattern disposed on the substrate, wherein the electrode pattern includes a dent portion, which is bent along a profile of the trench area;
a planarization layer inserted in the dent portion;
a second insulating layer covering the substrate, the electrode pattern, and the planarization layer; and
a light-emitting element disposed on the second insulating layer,
wherein the planarization layer includes an organic-inorganic composite material.
12 . The display device of claim 11 , wherein
the organic-inorganic composite material includes an organic material and an inorganic material, and
a content of the inorganic material is greater than a content of the organic material.
13 . The display device of claim 12 , wherein
the organic material includes siloxane, and
the inorganic material includes silicon oxide (SiO 2 ).
14 . The display device of claim 11 , wherein
the electrode pattern includes an exposed surface exposed by the flat area of the substrate and the planarization layer, and
a top surface of the flat area, the exposed surface and a top surface of the planarization layer are disposed on a same plane.
15 . The display device of claim 14 , further comprising:
a thin-film transistor disposed between the first insulating layer and the light-emitting element,
wherein a semiconductor layer of the thin-film transistor overlaps the electrode pattern.
16 . The display device of claim 14 , wherein
the light-emitting element includes a first electrode, a light-emitting layer, which is disposed on the first electrode, and a second electrode, which is disposed on the light-emitting layer,
the display device further comprises a thin-film transistor disposed between the first insulating layer and the light-emitting element, and
the first electrode of the light-emitting element and the thin-film transistor are electrically connected to each other.
17 . The display device of claim 14 , further comprising:
a thin-film transistor disposed between the substrate and the light-emitting element,
wherein the electrode pattern is a gate electrode of the thin-film transistor.
18 . A method of manufacturing a display device, the method comprising:
preparing a substrate;
forming a flat area and a trench area, which is recessed from the flat area, on the substrate;
forming an electrode material layer, which is bent in part along a profile of the trench area, on the substrate;
forming an organic-inorganic composite material layer on the electrode material layer;
forming a planarization layer, which is disposed on a part of the electrode material layer, by etching the organic-inorganic composite material layer;
forming an electrode layer by selectively etching a part of the electrode material layer not covered by the planarization layer; and
forming a first insulating layer on the flat area of the substrate, the planarization layer, and the electrode layer.
19 . The method of claim 18 , wherein
each of the organic-inorganic composite material layer and the organic-inorganic composite layer includes an organic material and an inorganic material, and
a content of the inorganic material is greater than a content of the organic material.
20 . The method of claim 19 , wherein
the organic material includes siloxane, and
the inorganic material includes silicon oxide (SiO 2 ).