Semiconductor package with gas release holes
View Patent ↗A semiconductor package includes a silicon substrate with an active surface and an inactive surface. A semiconductor device, such as an image, light, or optical sensor, is formed in the active surface and disposed on the substrate. A glass plate is coupled to the substrate with adhesive. The glass plate includes a sensor area that corresponds to the area of the semiconductor device and holes through the glass plate that are generally positioned around the sensor area of the glass plate. During formation of the package, the holes through the glass plate allow gas released by the adhesive to escape the package and prevent formation of a gas bubble.
1 . A device, comprising:
a substrate;
a semiconductor device on the substrate;
a glass plate on the substrate, the glass plate having a first surface, a second surface opposite to the first surface, and a sensor area corresponding to the semiconductor device;
an adhesive between the semiconductor device and the glass plate; and
a plurality of holes through the glass plate from the first surface to the second surface that each expose a top surface of the adhesive, the plurality of holes arranged around at least a portion of the sensor area of the glass plate.
2 . The device of claim 1 , wherein the sensor area includes a plurality of sides, the plurality of holes arranged on only one side of the sensor area of the glass plate.
3 . The device of claim 1 , wherein the plurality of holes are arranged around an entirety of the sensor area of the glass plate.
4 . The device of claim 1 , wherein the glass plate includes the plurality of holes only proximate the sensor area.
5 . The device of claim 1 , wherein the plurality of holes are aligned with the at least one side of the sensor area of the glass plate.
6 . The device of claim 1 , further comprising:
a filter between the semiconductor device and the glass plate.
7 . The device of claim 1 , wherein each of the plurality of holes:
i) defines a plurality of gas flow paths through the glass plate in communication with the top surface of the adhesive;
ii) is open to an external environment; or
iii) both i) and ii).
8 . A device, comprising:
a semiconductor device;
a glass plate on the semiconductor device having a sensor area;
an adhesive between the semiconductor device and the glass plate; and
a plurality of holes only through the glass plate proximate the sensor area of the glass plate, wherein the plurality of holes each expose a top surface of the adhesive.
9 . The device of claim 8 , further comprising:
a substrate, the semiconductor device disposed on the substrate.
10 . The device of claim 8 , wherein the glass plate includes a first surface facing the adhesive and a second surface opposite to the first surface, the plurality of holes extending through the glass plate from the first surface to the second surface.
11 . The device of claim 8 , wherein the sensor area of the glass plate corresponds to boundaries of the semiconductor device.
12 . The device of claim 8 , wherein the plurality of holes are arranged on at least two sides of the sensor area.
13 . The device of claim 8 , wherein the plurality of holes are arranged on every side of the sensor area.
14 . The device of claim 8 , wherein each of the plurality of holes:
i) defines a gas flow path through the glass plate in communication with the top surface of the adhesive;
ii) is open to an external environment; or
iii) both i) and ii).
15 . A device, comprising:
a substrate;
a semiconductor device on the substrate, the semiconductor device having a first side and a second side opposite to the first side;
a glass plate on the semiconductor device;
an adhesive between the semiconductor device and the glass plate; and
a plurality of holes through the glass plate, the plurality of holes aligned proximate the first side and the second side of the semiconductor device, wherein the plurality of holes each expose a top surface of the adhesive.
16 . The device of claim 15 , wherein the semiconductor device includes a third side and a fourth side, the plurality of holes aligned proximate the third side and the fourth side of the semiconductor device.
17 . The device of claim 15 , wherein the glass plate includes a first surface and a second surface, the plurality of holes extending through the glass plate from the first surface to the second surface.
18 . The device of claim 15 , wherein the plurality of holes include only a single row of holes or only a single column of holes aligned proximate the first side of the semiconductor device and only a single row of holes or a single column of holes aligned proximate the second side of the semiconductor device.
19 . The device of claim 18 , wherein each row or column of holes includes at least two holes.
20 . The device of claim 15 , wherein each of the plurality of holes:
i) defines a gas flow path through the glass plate in communication with the top surface of the adhesive;
ii) is open to an external environment; or
iii) both i) and ii).