Resist compound, method for forming pattern using same, and method for manufacturing semiconductor device using same
Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:
1 . A compound represented by Formula 1:
wherein, in Formula 1,
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 are each independently one selected from hydrogen, deuterium, and a C 1 -C 3 alkyl,
R 10 is a single bond, a linear C 1 -C 11 alkyl, or a branched C 1 -C 11 alkyl,
R 20 is a C 2 -C 11 perhalogenated alkyl or a C 2 -C 11 perhalogenated alkyl ether perhalogenated alkyl,
X is one selected from H, F, Cl, Br, and I,
n is an integer from 10 to 150, and
wherein a total number of Sn is equal to a total number of R 20 .
2 . The compound of claim 1 , wherein, in Formula 1,
R 20 is represented by C b X 2b O Z , wherein
X is one selected from F and I,
b is an integer from 2 to 11, and
z is an integer selected from 0, 1, 2, and 3.
3 . The compound of claim 1 , wherein, in Formula 1, the C 2 -C 11 perhalogenated alkyl or the C 2 -C 11 perhalogenated alkyl ether perhalogenated alkyl in R 20 is a C 2 -C 11 perfluoroalkyl or a C 2 -C 11 perflouroalkyl ether perflouroalkyl.
4 . The compound of claim 1 , wherein the compound represented by Formula 1 comprises a compound represented by Formula 2:
wherein, in Formula 2,
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 are each independently one selected from hydrogen, deuterium, and a C 1 -C 3 alkyl,
X is one selected from F, Cl, Br, and I,
a is an integer selected from 0 to 11,
b is an integer selected from 2 to 11,
z is an integer selected from 0, 1, 2, and 3, and
n is an integer from 10 to 150.
5 . The compound of claim 4 , wherein
in Formula 2, X is F.
6 . The compound of claim 1 , wherein the compound represented by Formula 1 comprises a compound represented by Formula 3 or a compound represented by Formula 4:
wherein, in Formula 3, n is an integer from 10 to 150,
wherein, in Formula 4, n is an integer from 10 to 150.
7 . The compound of claim 6 , wherein
the compound represented by Formula 1 comprises the compound represented by Formula 3.
8 . The compound of claim 6 , wherein the compound represented by Formula 1 comprises the compound represented by Formula 4.
9 . A method of forming a pattern, the method comprising:
forming a film using the compound of claim 1 ; and
patterning the film.
10 . A method of manufacturing a semiconductor device, the method comprising:
forming a resist film by coating a substrate with a compound represented by Formula 1; and
patterning the resist film,
wherein, in Formula 1,
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 are each independently one selected from hydrogen, deuterium, and a C 1 -C 3 alkyl,
R 10 is a single bond, a linear C 1 -C 11 alkyl, or a branched C 1 -C 11 alkyl,
R 20 is C 2 -C 11 perhalogenated alkyl or C 2 -C 11 perhalogenated alkyl ether perhalogenated alkyl,
X is one selected from H, F, Cl, Br, and I,
n is an integer from 10 to 150,
wherein a total number of Sn is equal to a total number of R 20 .
11 . The method of claim 10 , wherein, in Formula 1,
R 20 is represented by C b X 2b O Z ,
X is one selected from F and I, b is an integer from 2 to 11, and z is an integer selected from 0, 1, 2, and 3.
12 . The method of claim 10 , wherein, in Formula 1, the C 2 -C 11 perhalogenated alkyl or the C 2 -C 11 perhalogenated alkyl ether perhalogenated alkyl in R 20 is a C 2 -C 11 perfluoroalkyl, and X is F.
13 . The method of claim 12 , wherein the patterning of the resist film comprises:
irradiating a light on the resist film; and
removing a portion of the resist film using a developing solution,
wherein the light includes an electron beam or an extreme ultraviolet ray, and
the developing solution includes a highly fluorinated solution.
14 . The method of claim 10 , wherein the compound represented by Formula 1 comprises a compound represented by Formula 2:
wherein, in Formula 2,
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 are each independently one selected from hydrogen, deuterium, and a C 1 -C 3 alkyl,
X is one selected from F and I,
a is an integer selected from 0 to 11,
b is an integer selected from 2 to 11,
z is an integer selected from 0, 1, 2, and 3, and
n is an integer from 10 to 150.
15 . The method of claim 14 , wherein
in Formula 2, X is F.
16 . The method of claim 14 , wherein the compound represented by Formula 2 comprises a compound represented by Formula 3:
wherein, in Formula 3, n is an integer from 10 to 150.
17 . The method of claim 14 , wherein the compound represented by Formula 2 comprises a compound represented by Formula 4:
wherein, in Formula 4, n is an integer from 10 to 150.