Granted Patent B2

US 12,563,729 · App. 17/933,513 · Granted Feb 24, 2026

Inventor: Christoph Kutter (Munich, DE)

Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

H10B43/27H10B41/27

Abstract

Claims (43)

1 . A method for generating a vertical channel structure in a layer stack when producing three-dimensionally integrated semiconductor memories, the method comprising:

providing a substrate with a layer stack arranged thereon, the layer stack comprising a plurality of single layers, wherein several single layers of a first material as well as several single layers of a different second material are deposited alternately on top of each other,

wherein the first material and the second material are each electrically conductive or semi-conductive,

structuring at least one vertical channel structure into the layer stack, wherein the vertical channel structure extends in a vertical direction at least partially through the layer stack, such that one or more of the single layers are exposed inside the vertical channel structure and are made accessible through the vertical channel structure,

wherein

the step of structuring the vertical channel structure in the layer stack is performed by applying an anodic etching method, wherein a first electric voltage potential is applied to a first portion of the layer stack, and wherein a different second electric voltage potential is applied to a different second portion of the layer stack, such that an electric current flows vertically through the layer stack between the first and the second portion,

which generates the vertical channel structure in the layer stack by directional anodic etching.

2 . The method according to claim 1 ,

wherein the vertical channel structure generated by means of the anodic etching method comprises an aspect ratio with respect to its length to width of more than 50:1 or more than 100:1.

3 . The method according to claim 1 ,

wherein the vertical channel structure generated by means of the anodic etching method comprises a diameter with a deviation of less than 50% across the entire length of the vertical channel structure and thus remains approximately constant.

4 . The method according to claim 1 ,

wherein the vertical channel structure extends in a straight line between the first portion of the layer stack and the second portion of the layer stack.

5 . The method according to claim 1 ,

wherein the vertical channel structure extends through multiple single layers of the layer stack or wherein the vertical recess extends through all single layers of the layer stack.

6 . The method according to claim 1 ,

wherein a plurality of vertical channel structures in a layer stack with more than 100 single layers or more than 200 single layers or more than 300 single layers can be generated with the applied anodic etching method.

7 . The method according to claim 1 ,

further comprising selectively removing the single layers of the first material from the layer stack by maintaining the single layers of the second material,

by applying an etching process, wherein an etching medium reaches the layer stack through the vertical channel structure and reaches the single layers of the first and second material that are exposed and made accessible inside the vertical channel structure and releases selectively the single layers of the first material from the layer stack.

8 . The method according to claim 1 ,

wherein the single layers of the first material and the single layers of the second material comprise an etching behavior that is different for specific etching media, such that the first material comprises a high etching selectivity relative to the second material.

9 . The method according to claim 1 ,

wherein the single layers of the first material comprise a first doped semiconductor material or consist of a first doped semiconductor material, and/or

wherein the single layers of the second material comprise a second doped semiconductor material or consist of a second doped semiconductor material,

wherein the first and the second doped semiconductor material are different.

10 . The method according to claim 9 ,

wherein the first doped semiconductor material comprises a different doping type or a different degree of doping compared to the second doped semiconductor material.

11 . The method according to claim 1 ,

wherein the single layers of the first material comprise germanium or silicon germanium or consist of germanium or silicon germanium, and/or

wherein the single layers of the second material comprise silicon or consist of silicon.

12 . The method according to claim 1 ,

wherein the single layers of the first material and/or the single layers of the second material each comprise an amorphous structure.

13 . The method according to claim 1 ,

wherein, during the application of the anodic etching behavior, a direct light source with a predetermined wavelength is directed onto the layer stack to increase the charge carrier density in the layer stack and to support thereby the directional anodic etching process.

14 . The method according to claim 1 ,

wherein the step of structuring the vertical channel structure in the layer stack using directional anodic etching is performed without presence of a catalyst.

15 . The method of claim 1 ,

further comprising a step of providing a first electrode for providing the first electric voltage potential to the first portion of the layer stack, and a step of providing a second electrode for providing the different second electric voltage potential to the different second portion of the layer stack,

wherein the electric current flowing vertically through the layer stack between the first and the second portions selectively removes only material residing between the first and second electrodes.

16 . The method according to claim 15 ,

wherein the first electrode is directly coupled to the first portion of the layer stack, and

wherein the second electrode is directly coupled to the second portion of the layer stack.

Assignments (1)

Continuity (1)

References Cited (39)