IP Library › Granted Patent US 12,567,719
Granted Patent B2
US 12,567,719 · App. 17/915,948 · Granted Mar 3, 2026

Optical semiconductor chip

Inventors: Shigeru Kanazawa (Musashino, JP); Yuta Ueda (Musashino, JP); Takahiko Shindo (Musashino, JP); Meishin Chin (Musashino, JP)
Assignee: NTT, Inc.
H01S5/0427H01S5/04254H01S5/04256H01S5/2213H01S5/06226H01S5/222H01S5/227
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Quick Facts
Patent No.
US 12,567,719
App. No.
17/915,948
Granted
Mar 3, 2026
Kind
B2
Abstract

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide constituting a laser. The depletion layer capacitance generated in an active layer of the optical waveguide is cancelled by an inductance component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

Claims (17)

1 . An optical semiconductor chip, comprising:

a laser light source having an optical waveguide structure, the structure having a first type semiconductor base layer, an active layer and a second type semiconductor layer arranged in this order;

an electrode pad receiving a modulation signal;

a modulation electrode being formed on the second type semiconductor layer; and

a meander wiring connecting the electrode pad and the modulation electrode and providing inductance in series with respect to a depletion layer capacitance of the optical waveguide,

wherein a portion under the meander wiring and the electrode pad is composed of a material having a dielectric constant lower than a dielectric constant of the semiconductor base layer; and

a thickness of the material is set such that a height of the meander wiring and the electrode pad is higher than a top surface of the optical waveguide.

2 . The optical semiconductor chip according to claim 1 ,

wherein a line width of the meander wiring is narrower than a width of the electrode pad.

3 . The optical semiconductor chip according to claim 1 ,

wherein the amount of inductance of the meander wiring is 0.18 nH or less.

4 . The optical semiconductor chip according to claim 1 ,

wherein the laser light source is a direct modulation laser.

5 . An optical modulator assembly, comprising:

the optical semiconductor chip according to claim 1 ;

a chip in which terminators are integrated; and

a wiring board for leading the modulation signal.

Assignments (2)
CHANGE OF NAME Recorded Aug 18, 2025
From: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
To: NTT, INC.
Reel/Frame 072507/0679 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2022
From: KANAZAWA, SHIGERU; UEDA, YUTA; SHINDO, TAKAHIKO; CHIN, MEISHIN
To: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
Reel/Frame 061260/0570 →
Continuity (1)
Related Publication 20230163563A1 · May 25, 2023
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