IP Library › Granted Patent US 12,567,845
Granted Patent B2
US 12,567,845 · App. 17/979,148 · Granted Mar 3, 2026

Amplifier and electronic system including the same

Inventors: Jae Hoon Lee (Suwon-si, KR); Yong Lim (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
H03F3/45269H03F1/086H03F2200/451
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Quick Facts
Patent No.
US 12,567,845
App. No.
17/979,148
Granted
Mar 3, 2026
Kind
B2
Abstract

An amplifier and an electronic system including the same are provided. An amplifier includes a first NMOS transistor configured to receive a first input, a second NMOS transistor configured to receive a second input, the second NMOS transistor including a source connected to a source of the first NMOS transistor, a first resistor including a first end connected to a drain of the first NMOS transistor and a second end connected to a first output, a second resistor including a first end connected to a drain of the second NMOS transistor, and a second end connected to a second output, and the amplifier is configured to generate the first output and the second output based on the first input, the second input, a resistance value of the first resistor, and a resistance value of the second resistor.

Claims (79)

1 . An amplifier comprising:

a first sub-dynamic amplifier; and

a second sub-dynamic amplifier;

the first sub-dynamic amplifier including:

a first-a NMOS transistor configured to receive a first input;

a second-a NMOS Transistor configured to receive a second input, the second-a NMOS transistor including a source connected to a source of the first-a NMOS transistor;

a first resistor including a first end connected to a drain of the first-a NMOS transistor and a second end connected to a first-a output;

a second resistor including a first end connected to a drain of the second-a NMOS Transistor, and a second end connected to a second-a output, and

the second sub-dynamic amplifier including:

a first-b NMOS transistor configured to receive an output of a drain of the first-a NMOS transistor, the first-b NMOS transistor including a drain connected to a first-b output;

a second-b NMOS transistor configured to receive an output of a drain of the second-a NMOS transistor, the second-b NMOS transistor including a source connected to a source of the first-b NMOS transistor, and the drain of the second-b NMOS transistor is connected to a second-b output, and

wherein the amplifier is configured to generate the first-b output and the second-b output based on the first input, the second input, a resistance value of the first resistor, and a resistance value of the second resistor,

wherein the first-a output and the second-a output are connected to a first reset switch block, and the first reset switch block is configured to reset the first-a output and the second-a output to a common voltage,

wherein the first-b output and the second-b output are connected to a second reset switch block, and the second reset switch block is configured to reset the first-b output and the second-b output to the common voltage.

2 . The amplifier of claim 1 , wherein the resistance values of the first resistor and the second resistor are equal to each other.

3 . The amplifier of claim 1 , wherein the resistance values of the first resistor and the second resistor are different from each other.

4 . The amplifier of claim 1 , wherein the amplifier further comprises: a third resistor connected to the first-a output;

a fourth resistor connected to the second-a output;

a first-a PMOS transistor connected in series with the third resistor, the first-a PMOS transistor configured to receive the first input; and

a second-a PMOS transistor connected in series with the fourth resistor, the second-a PMOS transistor including a source connected to a source of the first-a PMOS transistor, and the second-a PMOS transistor is configured to receive the second input.

5 . The amplifier of claim 4 , wherein the resistance values of the first resistor and the second resistor and resistance values of the third resistor and the fourth resistor are equal to each other.

6 . The amplifier of claim 4 , wherein the resistance values of the first resistor and the second resistor and resistance values of the third resistor and the fourth resistor are different from each other.

7 . The amplifier of claim 4 , wherein

the resistance values of each of the first resistor and the second resistor is equal to a first resistance value; and

resistance values of each of the third resistor and the fourth resistor is equal to a second resistance value different from the first resistance value.

8 . The amplifier of claim 1 , wherein the first sub-dynamic amplifier further includes:

a first-a PMOS transistor including a source configured to receive a power voltage,

a second-a PMOS transistor including a source configured to receive the power voltage, and

wherein the sources of the first-a PMOS transistor and the second-a PMOS transistor are connected to each other, and

wherein the second sub-dynamic amplifier further includes:

a first-b PMOS transistor including a drain and a source, the drain connected to the first-b output, and the source configured to receive the power voltage, and

a second-b PMOS transistor including a drain and a source, the drain connected to the second-b output, and the source configured to receive the power voltage, and

wherein the sources of the first-b PMOS transistor and the second-b PMOS transistor are connected to each other.

9 . An amplifier comprising:

a first sub-dynamic amplifier; and

a second sub-dynamic amplifier;

the first sub-dynamic amplifier including:

a first-a NMOS transistor configured to receive a first input,

a second-a NMOS transistor configured to receive a second input, the second-a NMOS transistor including a source connected to a source of the first-a NMOS transistor,

a first resistor including a first end connected to a drain of the first-a NMOS transistor and a second end connected to a first-a output, and

a second resistor including a first end connected to a drain of the second-a NMOS transistor and a second end connected to a second-a output;

the second sub-dynamic amplifier including:

a first-b NMOS transistor configured to receive an output of a drain of the first-a NMOS transistor, the first-b NMOS transistor including a drain connected to a first-b output;

a second-b NMOS transistor configured to receive an output of a drain of the second-a NMOS transistor, the second-b NMOS transistor including a source connected to a source of the first-b NMOS transistor, and the drain of the second-b NMOS transistor is connected to a second-b output; and

wherein the first sub-dynamic amplifier further includes:

a first-a PMOS transistor including a source configured to receive a power voltage, and

a second-a PMOS transistor including a source configured to receive the power voltage,

wherein the sources of the first-a PMOS transistor and the second-a PMOS transistor are connected to each other, and

wherein the amplifier is configured to generate the first-b output and the second-b output based on the first input, the second input, a resistance value of the first resistor, and a resistance value of the second resistor.

10 . The amplifier of claim 9 , wherein the resistance values of the first resistor and the second resistor are equal to each other.

11 . The amplifier of claim 9 , wherein the resistance values of the first resistor and the second resistor are different from each other.

12 . The amplifier of claim 9 , wherein

the second sub-dynamic amplifier further includes:

a first-b PMOS transistor including a drain and a source, the drain connected to the first-b output, and the source configured to receive the power voltage, and

a second-b PMOS transistor including a drain and a source, the drain connected to the second-b output, and the source configured to receive the power voltage,

wherein the sources of the first-b PMOS transistor and the second-b PMOS transistor are connected to each other.

13 . The amplifier of claim 9 , wherein the first sub-dynamic amplifier further includes:

a third resistor connected to the first-a output; and

a fourth resistor connected to the second-a output.

14 . The amplifier of claim 13 , wherein the resistance values of the first resistor and the second resistor, and resistance values of the third resistor and the fourth resistor are equal to each other.

15 . The amplifier of claim 13 , wherein the resistance values of the first resistor and the second resistor, and resistance values of the third resistor and the fourth resistor are different from each other.

16 . The amplifier of claim 13 , wherein

the resistance values of each of the first resistor and the second resistor are equal to a first resistance value; and

resistance values of each of the third resistor and the fourth resistor are equal to a second resistance value different from the first resistance value.

17 . The amplifier of claim 13 , wherein

the first-a output and the second-a output are connected to a first reset switch block; the first reset switch block is configured to reset the first-a output and the second-a output to a common voltage;

the first-b output and the second-b output are connected to a second reset switch block; and

the second reset switch block is configured to reset the first-b output and the second-b output to the common voltage.

18 . An electronic system comprising:

at least one processor;

a communication interface configured to communicate with the at least one processor, the communication interface including the amplifier according to claim 9 .

19 . The electronic system of claim 18 , wherein the first sub-dynamic amplifier further includes:

a third resistor connected to the first-a output; and

a fourth resistor connected to the second-a output;

wherein the first-a PMOS transistor is connected in series with the third resistor; and

wherein the second-a PMOS transistor is connected in series with the fourth resistor.

20 . The electronic system of claim 18 , wherein the second sub-dynamic amplifier further includes:

a first-b PMOS transistor including a drain and a source, the drain connected to the first-b output, and the source configured to receive the power voltage, and

a second-b PMOS transistor including a drain and a source, the drain connected to the second-b output, and the source configured to receive the power voltage, and wherein the sources of the first-b PMOS transistor and the second-b PMOS transistor are connected to each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2022
From: LEE, JAE HOON; LIM, YONG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 061646/0217 →
Priority Claims (2)
KR 10-2022-0003407 · Jan 10, 2022 · national
KR 10-2022-0055958 · May 6, 2022 · national
Continuity (1)
Related Publication 20230223906A1 · Jul 13, 2023
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