IP Library › Granted Patent US 12,568,825
Granted Patent B2
US 12,568,825 · App. 18/115,545 · Granted Mar 3, 2026

Semiconductor package and method of manufacturing semiconductor package

Inventors: Yongjin Seol (Suwon-si, KR); Jungeun Koo (Suwon-si, KR); Tongsuk Kim (Suwon-si, KR); Youngjun Yoon (Suwon-si, KR); Mijeong Jeong (Suwon-si, KR); Younghun Jung (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L23/585H01L23/3128H01L23/49822H01L25/16H01Q9/0407
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,568,825
App. No.
18/115,545
Granted
Mar 3, 2026
Kind
B2
Abstract

Provided is a semiconductor package including a redistribution structure including first surface and a second surface opposite to each other, the redistribution structure including a redistribution layer, a semiconductor chip on the first surface of the redistribution structure, the semiconductor chip being electrically connected to the redistribution layer, an encapsulant on the semiconductor chip, at least one antenna pattern on the encapsulant, a side wiring line extending along a surface of the encapsulant from one end of the antenna pattern to the redistribution layer, and electronic devices on the second surface of the redistribution structure, the electronic devices being electrically connected to the redistribution layer, wherein the semiconductor chip and the antenna pattern are configured to transmit and receive a signal to and from each other through the electronic devices.

Claims (49)

1 . A semiconductor package comprising:

a redistribution structure comprising a first surface and a second surface opposite to each other, the redistribution structure comprising a redistribution layer;

a semiconductor chip on the first surface of the redistribution structure, the semiconductor chip being electrically connected to the redistribution layer;

an encapsulant on the semiconductor chip;

at least one antenna pattern on the encapsulant;

a side wiring line extending along a surface of the encapsulant from one end of the antenna pattern to the redistribution layer; and

electronic devices on the second surface of the redistribution structure, the electronic devices being electrically connected to the redistribution layer,

wherein the semiconductor chip and the antenna pattern are configured to transmit and receive a signal to and from each other through the electronic devices,

wherein the surface of the encapsulant comprises an upper surface opposite to the first surface, and a side surface extending from the upper surface toward the first surface,

wherein the side wiring line extends along the side surface of the encapsulant, and

wherein the side wiring line is in a trench extending along the side surface of the encapsulant.

2 . The semiconductor package of claim 1 , wherein the electronic devices comprise at least one of a power amp module (PAM), a frequency filter, a radio frequency (RF) switch, and passive devices.

3 . The semiconductor package of claim 1 , wherein the side wiring line comprises a first side wiring line connected to a first end of the antenna pattern and a second side wiring line connected to a second end of the antenna pattern.

4 . The semiconductor package of claim 3 , wherein the first side wiring line is configured to transmit a signal generated by the semiconductor chip to the antenna pattern, and

wherein the second side wiring line is configured to transmit a signal received by the antenna pattern to the semiconductor chip.

5 . The semiconductor package of claim 1 , further comprising:

a dielectric layer between the encapsulant and the antenna pattern.

6 . The semiconductor package of claim 5 , wherein the dielectric layer comprises a photosensitive resin, and

wherein the encapsulant comprises a non-photosensitive resin.

7 . The semiconductor package of claim 5 , wherein a thickness of the dielectric layer is greater than or equal to 200 μm in a direction perpendicular to the first surface.

8 . The semiconductor package of claim 1 , wherein the antenna pattern comprises a seed layer on the encapsulant and a plating layer stacked on the seed layer.

9 . The semiconductor package of claim 8 , wherein the seed layer comprises titanium (Ti) or a titanium (Ti) alloy, and

wherein the plating layer comprises copper (Cu) or a copper (Cu) alloy.

10 . The semiconductor package of claim 1 , further comprising:

a core member on the first surface of the redistribution structure and adjacent to the semiconductor chip.

11 . A semiconductor package comprising:

a redistribution structure comprising a first surface and a second surface opposite to each other, the redistribution structure comprising a redistribution layer;

a semiconductor chip on the first surface of the redistribution structure, the semiconductor chip being electrically connected to the redistribution layer;

an encapsulant on the semiconductor chip;

at least one antenna pattern on the encapsulant, the antenna pattern comprising a first end and a second end spaced apart from each other;

a dielectric layer between the encapsulant and the at least one antenna pattern;

a first side wiring line extending from the first end of the antenna pattern to the redistribution layer;

a second side wiring line extending from the second end of the antenna pattern to the redistribution layer; and

electronic devices comprising first devices on the second surface of the redistribution structure and electrically connected to the first side wiring line through the redistribution layer, and second devices electrically connected to the second side wiring line through the redistribution layer.

12 . The semiconductor package of claim 11 , wherein the first devices comprise a power amp module (PAM), a frequency filter, a radio frequency (RF) switch, and a passive device.

13 . The semiconductor package of claim 11 , wherein the second devices include a frequency filter, a radio frequency (RF) switch, and a passive device.

14 . The semiconductor package of claim 11 , wherein the first side wiring line is configured to transmit a signal generated by the semiconductor chip to the antenna pattern, and

wherein the second side wiring line is configured to transmit a signal received by the antenna pattern to the semiconductor chip.

15 . A semiconductor package comprising:

a redistribution structure comprising a first surface and a second surface opposite to each other, the redistribution structure comprising an insulating layer and a redistribution layer in the insulating layer;

a semiconductor chip on the first surface of the redistribution structure, the semiconductor chip being electrically connected to the redistribution layer;

an encapsulant on the semiconductor chip on the first surface;

at least one antenna pattern on the encapsulant;

a side wiring line extending from one end of the antenna pattern to the redistribution layer, the side wiring line comprising a first side surface being in contact with the one end of the antenna pattern, the encapsulant, and the insulating layer, and a second side surface opposite to the first side surface, the second side surface being exposed from the encapsulant and the insulating layer; and

electronic devices on the second surface of the redistribution structure, the electronic devices being electrically connected to the redistribution layer.

16 . The semiconductor package of claim 15 , wherein the semiconductor package comprises a side surface provided by the encapsulant and the insulating layer, and

wherein the second side surface is coplanar with the side surface of the semiconductor package.

17 . The semiconductor package of claim 15 , wherein the insulating layer comprises a photosensitive resin, and

wherein the encapsulant comprises a non-photosensitive resin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2023
From: SEOL, YONGJIN; KOO, JUNGEUN; KIM, TONGSUK; YOON, YOUNGJUN; JEONG, MIJEONG; JUNG, YOUNGHUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 062903/0201 →
Priority Claims (1)
KR 10-2022-0055918 · May 6, 2022 · national
Continuity (1)
Related Publication 20230361054A1 · Nov 9, 2023
References Cited (19)
US 10403511B2 · Saraswat et al. · 2019 [cited by applicant]
US 10644388B2 · Yamada et al. · 2020 [cited by applicant]
US 10685926B2 · Lim et al. · 2020 [cited by applicant]
US 20160379915A1 · Lee · 2016 [cited by examiner]
US 20190252351A1 · Lin et al. · 2019 [cited by applicant]
US 20200091608A1 · Alpman et al. · 2020 [cited by applicant]
US 20200243441A1 · Hsiao et al. · 2020 [cited by applicant]
US 20200303331A1 · Liang et al. · 2020 [cited by applicant]
US 20200328167A1 · Chang Chien et al. · 2020 [cited by applicant]
US 20200381812A1 · Yeh · 2020 [cited by examiner]
US 20210313302A1 · Kadan · 2021 [cited by examiner]
US 20220006173A1 · Lee et al. · 2022 [cited by applicant]
US 20220359420A1 · Kim · 2022 [cited by examiner]
CN 111199957A · 2020 [cited by applicant]
CN 112071808A · 2020 [cited by applicant]
CN 215183915U · 2021 [cited by applicant]
KR 1020210131477A · 2021 [cited by applicant]
KR 1020220000329A · 2022 [cited by applicant]
Communication dated Oct. 16, 2025 issued by the Korean Intellectual Property Office in Korean Patent Application No. 10-2022-0055918. [cited by applicant]