Solid state electric field sensor
This disclosure relates to an electrical field sensor. The sensor comprises a diamond substrate with a conducting surface providing positive charge carriers and multiple defects disposed in the diamond substrate. The sensor further comprises an optical apparatus to initialise and readout the multiple defect vacancies to determine the electrical field based on a detected fluorescence of the multiple defects. The multiple defects are located at a depth below the surface to enable the positive charge carriers to reach and positively charge the multiple defect vacancies under an influence of an external negative electric field to thereby alter the fluorescence of at least some of the multiple defects. Since the fluorescence can be measured optically, no electrical connections or amplifiers are required on the surface, which means significantly higher densities of sensors can be implemented.
1 . An electrical field sensor comprising:
a diamond substrate with a conducting surface providing positive charge carriers;
multiple defects disposed in the diamond substrate at a density to create a sensing surface suitable for imaging; and
an optical apparatus to initialize and readout the multiple defects to determine the electrical field based on a detected fluorescence of the multiple defects by imaging photoluminescence emissions from the multiple defects;
wherein the multiple defects are located at a depth below the surface to enable the positive charge carriers to reach and positively charge the multiple defects under an influence of an external negative electric field to thereby alter the fluorescence of at least some of the multiple defects.
2 . The electrical field sensor of claim 1 , wherein the multiple defects comprise Nitrogen vacancies.
3 . The electrical field sensor of claim 1 , wherein the conducting surface comprises a layer of hydrogen that provides the positive charge carriers.
4 . The electrical field sensor of claim 3 , wherein the hydrogen is partially oxidized to increase a sensitivity of the electrical field sensor.
5 . The electrical field sensor of claim 1 , wherein the optical apparatus comprises a light source configured to excite the multiple defects and a photo sensor camera to sense light emitted by the multiple defects as a result of the fluorescence.
6 . The electric field sensor of claim 1 , wherein the multiple defects are located at a depth of less than 7 nm below the surface.
7 . The electric field sensor of claim 1 , wherein the multiple defects are disposed in the diamond substrate at a density of 3e20 cm3 to 1e19 cm3.
8 . The electric field sensor of claim 7 , wherein the density is 2e20 cm3.
9 . The electric field sensor of claim 1 , wherein the positive charge carriers are provided by the conducting surface at a density of at least 1e13 cm2.
10 . The electric field sensor of claim 1 , wherein the diamond substrate and the conducting surface have a shape defining an array of protrusions and the optical apparatus is configured to readout each of the protrusions separately to obtain one intensity for each protrusion.
11 . The electric field sensor of claim 10 , wherein the protrusions have a frustoconical shape and wherein the protrusions are shaped with a density of protrusions of 510,000/mm2 or a resolution of 1.4 μm.
12 . A method for manufacturing an electric field sensor, the method comprising:
providing a diamond substrate;
incorporating defects into the diamond substrate at a density to create a sensing surface suitable for imaging;
disposing a conducting surface providing positive charge carriers onto the diamond substrate with incorporated defects;
wherein disposing the conducting surface is performed with a process that avoids diffusion into the diamond substrate and maintains the defects that are located at a depth below the surface to enable the positive charge carriers to reach and positively charge the multiple defects under an influence of an external negative electric field to thereby alter the fluorescence of at least some of the multiple defects.
13 . The method of claim 12 , wherein disposing the conducting surface comprises exposing the diamond surface to a hydrogen plasma.
14 . The method of claim 13 , wherein exposing the diamond surface to the hydrogen plasma comprises protecting the diamond surface from impact of protons reacting with the defects.
15 . The method of claim 14 , wherein protecting the diamond surface comprises placing the diamond surface under a shield to protect the diamond surface.
16 . The method of claim 15 , wherein the shield comprises openings to provide for plasma flow to the diamond surface.
17 . The method of claim 15 , wherein the openings of the shield constitute tunnels having a length that is longer than a diffusion length of the protons.
18 . The method of claim 12 , wherein the method further comprises partly oxidising the conductive surface on the diamond substrate.
19 . The method of claim 18 , wherein partly oxidising the conductive surface comprises multiple iterations of:
partly oxidising the conductive surface, and
measuring a sensitivity of the electric field sensor,
until a desired sensitivity is obtained.
20 . A method for measuring an electrical field, the method comprising:
exposing a diamond substrate with a conducting surface providing positive charge carriers to the electric field; and
optically initialising using a light source and imaging photoluminescence emissions from multiple defects disposed in the diamond substrate at a density to create a sensing surface suitable for imaging to measure, by measuring a change in fluorescence, an increase in an amount of positively charged defects as a result of more positive charge carriers reaching the multiple defects due to the electric field.