Methods of determining overlayer reference wavelength
A method of determining an overlay reference wavelength, the method comprising: forming a pattern structure including a wafer and overlay keys on the wafer; obtaining first setup values of the pattern structure for first measurement wavelengths, respectively; selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values; obtaining second setup values of the pattern structure for the second measurement wavelengths, respectively; and selecting a reference wavelength among the second measurement wavelengths based on the second setup values, wherein each of the first setup values is proportional to a deviation value of target sigma values of the overlay keys at a respective first measurement wavelength, and wherein each of the second setup values is inversely proportional to a deviation value of stack sensitivity values of the overlay keys at a respective second measurement wavelength.
1 . A method of determining an overlay reference wavelength, the method comprising:
forming a pattern structure including a wafer and overlay keys on the wafer;
obtaining first setup values of the pattern structure for first measurement wavelengths, respectively;
selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values;
obtaining second setup values of the pattern structure for the second measurement wavelengths, respectively; and
selecting a reference wavelength among the second measurement wavelengths based on the second setup values,
wherein each of the first setup values is proportional to a deviation value of target sigma values of the overlay keys at a respective first measurement wavelength among the first measurement wavelengths, and
wherein each of the second setup values is inversely proportional to a deviation value of stack sensitivity values of the overlay keys at a respective second measurement wavelength among the second measurement wavelengths.
2 . The method of claim 1 , wherein the obtaining the first setup values of the pattern structure includes:
obtaining the target sigma values of the overlay keys for each of the first measurement wavelengths; and
obtaining the first setup values of the pattern structure for each of the first measurement wavelengths from the target sigma values of the overlay keys at the respective first measurement wavelength among the first measurement wavelengths.
3 . The method of claim 1 , wherein each of the first setup values is proportional to an average value of the target sigma values of the overlay keys at the respective first measurement wavelength among the first measurement wavelengths.
4 . The method of claim 1 , wherein the obtaining the second setup values of the pattern structure includes:
obtaining the stack sensitivity values of the overlay keys for each of the second measurement wavelengths; and
obtaining the second setup values of the pattern structure for each of the second measurement wavelengths from the stack sensitivity values of the overlay keys at the respective second measurement wavelength among the second measurement wavelengths.
5 . The method of claim 1 , wherein each of the second setup values is proportional to an average value of the stack sensitivity values of the overlay keys at the respective second measurement wavelength among the second measurement wavelengths.
6 . The method of claim 1 , further comprising:
forming measurement reference maps of the pattern structure by obtaining overlay measurement values of the overlay keys for each of the first measurement wavelengths,
wherein the filtering the first measurement wavelengths is further based on the measurement reference maps.
7 . The method of claim 1 , wherein each of the overlay keys is an image based overlay (IBO) key, a diffraction based overlay (DBO) key, and/or a fringe based overlay (FBO) key.
8 . The method of claim 1 , wherein each of the overlay keys includes a lower pattern on the wafer, an upper layer on the lower pattern, and a photoresist pattern on the upper layer.
9 . The method of claim 8 , wherein each of the second setup values represents an alignment of the photoresist pattern with respect to the lower pattern.
10 . The method of claim 1 , wherein obtaining the first setup values comprises using a first equation that includes the target sigma values,
wherein obtaining the second setup values comprises using a second equation that includes the stack sensitivity values, and
wherein the first equation is different from the second equation.
11 . The method of claim 1 , wherein the target sigma values represent accuracies of the overlay keys at the respective first measurement wavelength among the first measurement wavelengths, and
wherein the stack sensitivity values represent resolutions of the overlay keys at the respective second measurement wavelength among the second measurement wavelengths.
12 . The method of claim 1 , wherein each of the first setup values is proportional to a first reference constant, and
wherein each of the second setup values is proportional to a second reference constant.
13 . A method of determining an overlay reference wavelength, the method comprising:
forming a pattern structure including a wafer and overlay keys on the wafer;
obtaining target sigma values of the overlay keys for each of first measurement wavelengths;
obtaining first setup values of the pattern structure for each of the first measurement wavelengths from the target sigma values of the overlay keys at a respective first measurement wavelength among the first measurement wavelengths; and
selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values,
wherein each of the first setup values is proportional to an average value and a deviation value of the target sigma values of the overlay keys at the respective first measurement wavelength among the first measurement wavelengths.
14 . The method of claim 13 , further comprising:
forming measurement reference maps of the pattern structure by obtaining overlay measurement values of the overlay keys for each of the first measurement wavelengths,
wherein the filtering the first measurement wavelengths is further based on the measurement reference maps.
15 . The method of claim 13 , wherein each of the overlay keys is an image based overlay (IBO) key, a diffraction based overlay (DBO) key, and/or a fringe based overlay (FBO) key.
16 . The method of claim 13 , wherein each of the overlay keys includes a lower pattern on the wafer, an upper layer on the lower pattern, and a photoresist pattern on the upper layer.
17 . A method of determining an overlay reference wavelength, the method comprising:
forming a pattern structure including a wafer and overlay keys on the wafer;
obtaining first setup values of the pattern structure for each of first measurement wavelengths;
selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values;
obtaining stack sensitivity values of the overlay keys for each of the second measurement wavelengths;
obtaining second setup values of the pattern structure for each of the second measurement wavelengths from the stack sensitivity values of the overlay keys at a respective second measurement wavelength among the second measurement wavelengths; and
selecting a reference wavelength among the second measurement wavelengths based on the second setup values,
wherein each of the second setup values is proportional to an average value of the stack sensitivity values of the overlay keys at the respective second measurement wavelength among the second measurement wavelengths and inversely proportional to a deviation value of the stack sensitivity values of the overlay keys at the respective second measurement wavelength among the second measurement wavelengths.
18 . The method of claim 17 , further comprising:
forming measurement reference maps of the pattern structure by obtaining overlay measurement values of the overlay keys for each of the first measurement wavelengths,
wherein the filtering the first measurement wavelengths is further based on the measurement reference maps.
19 . The method of claim 17 , wherein each of the overlay keys is an image based overlay (IBO) key, a diffraction based overlay (DBO) key, and/or a fringe based overlay (FBO) key.
20 . The method of claim 17 , wherein each of the overlay keys includes a lower pattern on the wafer, an upper layer on the lower pattern, and a photoresist pattern on the upper layer.