IP Library › Granted Patent US 12,575,217
Granted Patent B2
US 12,575,217 · App. 18/625,099 · Granted Mar 10, 2026

Solar cell and solar cell module

Inventors: Menglei Xu (Shanghai, CN); Jie Yang (Shanghai, CN); Xinyu Zhang (Shanghai, CN); Hao Jin (Shanghai, CN)
Assignee: JINKO SOLAR CO., LTD.
H10F77/227H10F77/1645H10F77/955
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Quick Facts
Patent No.
US 12,575,217
App. No.
18/625,099
Granted
Mar 10, 2026
Kind
B2
Abstract

Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

Claims (38)

1 . A solar cell, comprising:

a substrate having a first side, an opposing second side, a first surface on the first side, and a second surface on the second side, wherein the solar cell has a first region and a second region;

a tunneling layer formed on the second surface, the tunneling layer having a first part in the first region and a second part in the second region, wherein the second surface has a step between the first region and the second region, and the first part is closer to the first side than the second part;

a first emitter disposed in the first region on the first part of the tunneling layer;

a second emitter formed on the second part of the tunneling layer and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter;

a first electrode formed over the first region of the substrate and configured to electrically connect with the first emitter by penetrating through the second emitter; and

a second electrode formed on the second region of the substrate and configured to electrically connect with the second emitter;

wherein the first emitter has a third surface facing away from the tunneling layer, the second emitter has a fourth surface in contact with the second part of the tunneling layer, and the third surface is flush with the fourth surface or closer to the first side than the fourth surface, and wherein a vertical distance between the third surface and the fourth surface in a direction perpendicular to the second surface is less than 5 μm wherein part of the second emitter is formed on the third surface.

2 . The solar cell according to claim 1 , wherein a sidewall surface of the first emitter is in contact with a sidewall surface of the second emitter.

3 . The solar cell according to claim 1 , wherein the second emitter has a thickness of 30 nm to 200 nm in the direction perpendicular to the second surface.

4 . The solar cell according to claim 1 , wherein the second emitter includes a first doped portion and a second doped portion, at least part of the second doped portion is formed between the first doped portion and the first electrode, doping concentration anywhere in the first doped portion is greater than or equal to doping concentration anywhere in the second doped portion, and doping concentration in the second doped portion decreases in a direction from the first doped portion towards the first electrode.

5 . The solar cell according to claim 4 , wherein a concentration gradient of the second doped portion is in a range of 5E16 atoms×cm −3 /cm to 2E22 atoms×cm −3 /cm.

6 . The solar cell according to claim 4 , wherein a width of the second doped portion is greater than 20 μm in the direction of the first doped portion towards the first electrode.

7 . The solar cell according to claim 1 , wherein a material of the substrate is a carbon simple substance, an organic material or a multicomponent compound.

8 . The solar cell according to claim 7 , wherein the multicomponent compound includes perovskite, gallium arsenide, cadmium telluride, and copper indium selenium.

9 . The solar cell according to claim 1 , further including a first passivation layer covering surfaces of the first emitter and the second emitter facing away from the substrate, and a second passivation layer covering the first surface.

10 . The solar cell according to claim 9 , wherein a material of the first passivation layer includes at least one of silicon nitride, silicon oxynitride, silicon carbonitride oxide, titanium oxide, hafnium oxide, or aluminum oxide, and a material of the second passivation layer includes silicon nitride or silicon oxide.

11 . A solar cell module, comprising:

at least one cell string formed by connecting a plurality of solar cells;

at least one encapsulation film configured to cover a surface of the at least one cell string; and

at least one cover plate configured to cover a surface of the at least one encapsulation film facing away from the at least one cell string;

wherein each solar cell of the plurality of solar cells includes:

a substrate having a first side, an opposing second side, a first surface on the first side, and a second surface on the second side, wherein the solar cell has a first region and a second region;

a tunneling layer formed on the second surface, the tunneling layer having a first part in the first region and a second part in the second region, wherein the second surface has a step between the first region and the second region, and the first part is closer to the first side than the second part;

a first emitter disposed in the first region on the first part of the tunneling layer;

a second emitter formed on the second part of the tunneling layer and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter;

a first electrode formed over the first region of the substrate and configured to electrically connect with the first emitter by penetrating through the second emitter; and

a second electrode formed on the second region of the substrate and configured to electrically connect with the second emitter;

wherein the first emitter has a third surface facing away from the tunneling layer, the second emitter has a fourth surface in contact with the second part of the tunneling layer, and the third surface is flush with the fourth surface or closer to the first side than the fourth surface, and wherein a vertical distance between the third surface and the fourth surface in a direction perpendicular to the second surface is less than 5 μm wherein part of the second emitter is formed on the third surface.

12 . The solar cell module according to claim 11 , wherein a sidewall surface of the first emitter is in contact with a sidewall surface of the second emitter.

13 . The solar cell module according to claim 11 , wherein the second emitter has a thickness of 30 nm to 200 nm in the direction perpendicular to the second surface.

14 . The solar cell module according to claim 11 , wherein the second emitter includes a first doped portion and a second doped portion, at least part of the second doped portion is formed between the first doped portion and the first electrode, doping concentration anywhere in the first doped portion is greater than or equal to doping concentration anywhere in the second doped portion, and doping concentration in the second doped portion decreases in a direction from the first doped portion towards the first electrode.

15 . The solar cell module according to claim 14 , wherein a concentration gradient of the second doped portion is in a range of 5E16 atoms×cm −3 /cm to 2E22 atoms×cm −3 /cm.

16 . The solar cell module according to claim 14 , wherein a width of the second doped portion is greater than 20 μm in the direction of the first doped portion towards the first electrode.

17 . The solar cell module according to claim 11 , wherein a material of the substrate is a carbon simple substance, an organic material or a multicomponent compound.

18 . The solar cell module according to claim 17 , wherein the multicomponent compound includes perovskite, gallium arsenide, cadmium telluride, and copper indium selenium.

19 . The solar cell module according to claim 11 , further including a first passivation layer covering surfaces of the first emitter and the second emitter facing away from the substrate, and a second passivation layer covering the first surface.

20 . The solar cell module according to claim 19 , wherein a material of the first passivation layer includes at least one of silicon nitride, silicon oxynitride, silicon carbonitride oxide, titanium oxide, hafnium oxide, or aluminum oxide, and a material of the second passivation layer includes silicon nitride or silicon oxide.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2025
From: JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD.; ZHEJIANG JINKO SOLAR CO., LTD.
To: JINKO SOLAR CO., LTD.
Reel/Frame 071333/0309 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2025
From: XU, MENGLEI; YANG, JIE; ZHANG, XINYU; JIN, HAO
To: ZHEJIANG JINKO SOLAR CO., LTD.; JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD.
Reel/Frame 070522/0473 →
Priority Claims (1)
CN 202110738433.7 · Jun 30, 2021 · national
Continuity (4)
Continuation 18428217 · Jan 31, 2024
Continuation 18341600 · Jun 26, 2023
Continuation 17390857 · Jul 30, 2021
Related Publication 20240250192A1 · Jul 25, 2024
References Cited (28)
US 10629758B2 · Rim et al. · 2020 [cited by applicant]
US 20090223562A1 · Niira et al. · 2009 [cited by applicant]
US 20120021557A1 · Kim et al. · 2012 [cited by applicant]
US 20120104460A1 · Nie et al. · 2012 [cited by applicant]
US 20130008494A1 · Bateman et al. · 2013 [cited by applicant]
US 20130133728A1 · Wu · 2013 [cited by examiner]
US 20130213469A1 · Kramer et al. · 2013 [cited by applicant]
US 20130247965A1 · Swanson et al. · 2013 [cited by applicant]
US 20150144183A1 · Yang et al. · 2015 [cited by applicant]
US 20150171230A1 · Kapur et al. · 2015 [cited by applicant]
US 20150179838A1 · Rim et al. · 2015 [cited by applicant]
US 20150357491A1 · Kimoto · 2015 [cited by applicant]
US 20160020342A1 · Heng et al. · 2016 [cited by applicant]
US 20160071996A1 · Swanson et al. · 2016 [cited by applicant]
US 20190386160A1 · Seno · 2019 [cited by examiner]
US 20200279968A1 · Bende et al. · 2020 [cited by applicant]
CN 105794004B · 2018 [cited by applicant]
CN 107068778B · 2020 [cited by applicant]
CN 112466960A · 2021 [cited by applicant]
DE 102013207189A1 · 2014 [cited by applicant]
WO 2013096500A1 · 2013 [cited by applicant]
WO 2016140309A1 · 2016 [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd. et al., US Non-Final Rejection, U.S. Appl. No. 17/390,857, Oct. 14, 2022, 11 pgs. [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd. et al., US Final Rejection, U.S. Appl. No. 17/390,857, Dec. 30, 2022, 19 pgs. [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd. et al., US Notice of Allowance, U.S. Appl. No. 17/390,857, Mar. 30, 2023, 10 pgs. [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd., et al., Extended European Search Report, EP 21188064.6, Nov. 12, 2021, 8 pgs. [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd. et al. , AU First Office Action, AU 2021209203, Jun. 17, 2022, 6 pgs. [cited by applicant]
Jinko Green Energy (Shanghai) Management Co., Ltd., et al., Non-Final Rejection, U.S. Appl. No. 18/341,600, Sep. 16, 2024, 30 pgs. [cited by applicant]