Semiconductor device
A backside conductors is configured such that an electrode for electrical connection to an outside is formed in addition to a heat sink in correspondence with each of a plurality of cavity structures, and a support member is formed so as to be at a position separated from dicing lines for dividing each of the cavity structures into an individual piece, arranged closer to the dicing lines than to the heat sink and the electrode, and interposed between a molding die and a board at a time of integral molding with the mold material.
1 . A semiconductor device in which a plurality of cavity structures are formed in a matrix form by a board in which a plurality of openings are arranged in a matrix form and by backside conductors arranged on a backside of the board, and a portion of the backside conductors that blocks each of the plurality of openings from the backside functions as a heat sink on which a semiconductor element is mounted, and that is an article integrally molded with a mold material sealing a front side of the board including the semiconductor element, the semiconductor device comprising:
the backside conductors in which a portion thereof serving as an electrode for electrical connection to an outside is formed in addition to the heat sink so as to correspond to each of the plurality of cavity structures, and a portion thereof that is at a position separated from dicing lines for dividing each of the cavity structures into an individual piece and is arranged closer to the dicing lines than to the heat sink and the electrode is formed to function as a support member interposed between a molding die and the board at a time of integral molding with the mold material.
2 . The semiconductor device according to claim 1 , wherein the support member is arranged between double dicing lines drawn with an interval between adjacent individual pieces.
3 . The semiconductor device according to claim 2 , wherein the double dicing lines are drawn in one of a longitudinal direction and a lateral direction.
4 . The semiconductor device according to claim 3 , wherein the double dicing lines are drawn in a direction parallel to a short side of the semiconductor device.
5 . The semiconductor device according to claim 1 , wherein the support member is arranged at a position on an inner side to the dicing line in each individual piece.
6 . The semiconductor device according to claim 1 , wherein the backside conductors have a thickness of 50 μm or more.
7 . The semiconductor device according to claim 2 , wherein the backside conductors have a thickness of 50 μm or more.
8 . The semiconductor device according to claim 3 , wherein the backside conductors have a thickness of 50 μm or more.
9 . The semiconductor device according to claim 4 , wherein the backside conductors have a thickness of 50 μm or more.
10 . The semiconductor device according to claim 5 , wherein the backside conductors have a thickness of 50 μm or more.
11 . The semiconductor device according to claim 6 , wherein the backside conductors have a thickness of 100 μm or more.
12 . The semiconductor device according to claim 7 , wherein the backside conductors have a thickness of 100 μm or more.
13 . The semiconductor device according to claim 8 , wherein the backside conductors have a thickness of 100 μm or more.
14 . The semiconductor device according to claim 9 , wherein the backside conductors have a thickness of 100 μm or more.
15 . The semiconductor device according to claim 10 , wherein the backside conductors have a thickness of 100 μm or more.