Granted Patent B1

US 12,578,094 · App. 19/215,969 · Granted Mar 17, 2026

Inventors: Evan B Callaway (Goleta, CA); Olivier H Sudre (Glastonbury, CT)

Assignee: RTX CORPORATION

F23R3/007F02C7/00C04B41/009C04B41/5059C04B41/52C04B41/89F05D2300/611

Abstract

Claims (27)

1 . A ceramic-containing material, comprising:

a substrate comprising a ceramic material;

an interface coating layer disposed on the ceramic material; and

a crystalline matrix disposed on the interface coating layer, the crystalline matrix being substantially free of an amorphous phase and comprising a boron-doped material having a boron dopant present in an amount of less than approximately 10 atomic percent.

2 . The ceramic-containing material of claim 1 , wherein the boron dopant present comprises approximately 2 atomic percent to approximately 10 atomic percent.

3 . The ceramic-containing material of claim 2 , wherein the boron dopant present comprises approximately 5 atomic percent to approximately 10 atomic percent.

4 . The ceramic-containing material of claim 1 , further comprising an interface protective coating layer disposed between the interface coating layer and the crystalline matrix.

5 . The ceramic-containing material of claim 4 , wherein the interface protective coating layer comprises a thickness of approximately 0.5 μm to approximately 2 μm.

6 . The ceramic-containing material of claim 4 , wherein the interface protective coating layer comprises silicon carbide.

7 . The ceramic-containing material of claim 1 , further comprising a seal coating layer disposed on the crystalline matrix and opposite an interface protective coating layer.

8 . The ceramic-containing material of claim 7 , wherein the seal coating layer comprises a thickness of approximately 1 μm to approximately 10 μm.

9 . The ceramic-containing material of claim 7 , wherein the seal coating layer comprises silicon carbide.

10 . The ceramic-containing material of claim 1 , wherein the boron dopant is dispersed throughout the crystalline matrix.

11 . The ceramic-containing material of claim 1 , wherein the boron dopant is graded throughout the crystalline matrix.

12 . The ceramic-containing material of claim 11 , wherein the boron dopant is present at a greater concentration proximate to the interface coating layer.

13 . The ceramic-containing material of claim 11 , wherein the boron dopant is present at a greater concentration opposite the interface coating layer.

14 . The ceramic-containing material of claim 1 , wherein the crystalline matrix comprises a thickness of approximately 50 am to approximately 200 μm.

15 . The ceramic-containing material of claim 1 , wherein the crystalline matrix comprises a boron-doped carbide-containing material.

16 . The ceramic-containing material of claim 15 , wherein the boron-doped carbide-containing material comprises a boron-doped silicon carbide.

17 . The ceramic-containing material of claim 1 , wherein the ceramic material comprises any one or more of the following: a ceramic fiber, a ceramic tow, a ceramic preform, and combinations thereof.

18 . The ceramic-containing material of claim 1 , wherein the amorphous phase comprises less than 5% by weight of the crystalline matrix.

19 . A gas turbine engine, comprising:

a fan section, a compressor section, a combustor section, a turbine section, an outer casing disposed radially outside of the compressor section, combustor section, and the turbine section, and a core gas path that extends through the compressor section, the combustor section, and the turbine section; and

at least one gas turbine engine component comprising:

a substrate comprising a ceramic material;

an interface coating layer disposed on the ceramic material; and

a crystalline matrix disposed on the interface coating layer, the crystalline matrix being substantially free of an amorphous phase and comprising a boron-doped material having a boron dopant present in an amount of less than approximately 10 atomic percent.

Assignments (1)

References Cited (18)