IP Library › Granted Patent US 12,578,423
Granted Patent B2
US 12,578,423 · App. 18/493,695 · Granted Mar 17, 2026

High frequency circuit and radar device

Inventor: Takehiro Kishida (Sanda, JP)
Assignee: Furuno Electric Co., Ltd.
G01S7/03
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Quick Facts
Patent No.
US 12,578,423
App. No.
18/493,695
Granted
Mar 17, 2026
Kind
B2
Abstract

A high frequency circuit and radar device is disclosed. The high frequency circuit includes a microstrip line (MSL), a suspended line (SML), and a connector (MTP). The MSL includes a dielectric substrate having opposing first surfaces and second surfaces, a first signal conductor arranged on the first surface, and a ground conductor arranged on the second surface. The SML includes a dielectric substrate, a second signal conductor arranged on the first surface, and a metal housing arranged from the second surface through a cavity. The MTP includes a dielectric substrate, a signal conductor connecting the first signal conductor and the second signal conductor, and a metal housing arranged from the second surface through a lower cavity. The height of the lower cavity gradually increases from the first end to the second end.

Claims (49)

1 . A high-frequency circuit comprising:

a dielectric substrate having a first surface and a second surface opposed to each other;

a metal layer;

a microstrip line comprising:

a first signal conductor disposed on the first surface of the dielectric substrate; and

a ground conductor disposed between the second surface of the dielectric substrate and the metal layer;

a suspended line comprising:

a second signal conductor disposed on the first surface of the dielectric substrate; and

a lower cavity disposed between the second surface of the dielectric substrate and the metal layer; and

a connector comprising:

a connected conductor disposed on the first surface of the dielectric substrate, the connected conductor connecting the first signal conductor to the second signal conductor; and

a transitional lower cavity disposed between the second surface of the dielectric substrate and the metal layer, wherein:

a width of the connected conductor continuously increases from a first end connecting to the first signal conductor toward a second end connecting to the second signal conductor; and

a height of the transitional lower cavity continuously increases from the first end toward the second end.

2 . The high-frequency circuit of claim 1 , wherein the width of the connected conductor is designed:

to vary continuously; and

to be the width of the first signal conductor at the first end and the width of the second signal conductor at the second end.

3 . The high-frequency circuit of claim 1 , wherein the width of the connected conductor is designed:

to vary gradually and discretely; and

to be the width of the first signal conductor at the first end and the width of the second signal conductor at the second end.

4 . The high-frequency circuit of claim 1 , wherein the distance between the dielectric substrate and the metal layer at the transitional lower cavity is designed:

to vary continuously; and

to be the distance between the dielectric substrate and the metal layer at the lower cavity at the second end.

5 . The high-frequency circuit of claim 1 , wherein the distance between the dielectric substrate and the metal layer at the transitional lower cavity is designed:

to vary discretely; and

to be the distance between the dielectric substrate and the metal layer at the lower cavity at the second end.

6 . The high-frequency circuit of claim 1 , wherein the metal layer is a metal enclosure surrounding the microstrip line and the suspended line.

7 . The high-frequency circuit of claim 1 , wherein the metal layer is a metal film formed on an insulator.

8 . A radar comprising:

a high-frequency circuit according to claim 1 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

9 . A radar comprising:

a high-frequency circuit according to claim 2 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

10 . A radar comprising:

a high-frequency circuit according to claim 3 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

11 . A radar comprising:

a high-frequency circuit according to claim 4 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

12 . A radar comprising:

a high-frequency circuit according to claim 5 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

13 . A radar comprising:

a high-frequency circuit according to claim 6 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

14 . A radar comprising:

a high-frequency circuit according to claim 7 ; and

a high-frequency element for the radar to be mounted on the microstrip line of the high-frequency circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2023
From: KISHIDA, TAKEHIRO
To: FURUNO ELECTRIC CO., LTD.
Reel/Frame 065337/0921 →
Priority Claims (1)
JP 2022-172395 · Oct 27, 2022 · national
Continuity (1)
Related Publication 20240142569A1 · May 2, 2024
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