IP Library › Granted Patent US 12,581,780
Granted Patent B2
US 12,581,780 · App. 18/265,172 · Granted Mar 17, 2026

Display device

Inventors: Myoungsoo Kim (Seoul, KR); Minwoo Lee (Seoul, KR); Jungsub Kim (Seoul, KR); Junghoon Kim (Seoul, KR)
Assignee: LG ELECTRONICS INC.
H10H20/8506H01L25/167H10D86/441H10D86/60
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Quick Facts
Patent No.
US 12,581,780
App. No.
18/265,172
Granted
Mar 17, 2026
Kind
B2
Abstract

The display device includes a substrate, a first wiring line on the substrate, a second wiring line on the substrate, and a first insulating member on the first wiring line and the second wiring line, a blocking member disposed across the first wiring line and the second wiring line, a second insulating member including a plurality of assembly holes, and a plurality of light emitting devices disposed in each of the plurality of assembly holes. Each of the plurality of assembly holes includes a first region closer to the blocking member and a second region farther than the first region from the blocking member. A part of the blocking member is disposed in the first area of the assembly hole.

Claims (39)

1 . A display device comprising:

a substrate;

a first wiring line on the substrate;

a second wiring line on the substrate;

a first insulating member on the first wiring line and the second wiring line;

a blocking member disposed across the first wiring line and the second wiring line;

a second insulating member comprising a plurality of assembly holes; and

a plurality of light emitting devices disposed in each of the plurality of assembly holes,

wherein each of the plurality of assembly holes comprises a first region close to the blocking member and a second region farther from the blocking member than the first region,

wherein a part of the blocking member is disposed in the first region of an assembly hole, and

wherein each of the plurality of light emitting devices comprises:

a first conductivity-type semiconductor layer;

an active layer on the first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer on the active layer;

a first and second insulating layers on at least both side surfaces of the first conductivity-type semiconductor layer; and

a first metal layer surrounding at least the second conductivity-type semiconductor layer.

2 . The display device according to claim 1 , wherein the first insulating layer overlaps a portion of the first wiring line in the assembly hole and the second insulating layer overlaps a portion of the second wiring line in the assembly hole.

3 . The display device according to claim 1 , wherein a thickness of the first metal layer is equal to a thickness of the blocking member.

4 . The display device according to claim 1 , wherein the first and second insulating layers are disposed on at least both side surfaces of each of the active layer and the second conductivity-type semiconductor layer, and

wherein the first metal layer is disposed on the first and second insulating layers.

5 . The display device according to claim 1 , wherein the first and second insulating layers of a light emitting device are disposed in the first region of the assembly hole.

6 . The display device according to claim 1 , wherein the first and second insulating layers of a light emitting device are configured to be in contact with the part of the blocking member in the assembly hole.

7 . The display device according to claim 1 , wherein the first metal layer of a light emitting device is disposed farther from a portion of the blocking member than the first and second insulating layers.

8 . The display device according to claim 1 , wherein the first metal layer of a light emitting device is disposed in the second region of the assembly hole.

9 . The display device according to claim 1 , wherein the first metal layer of a light emitting device is configured to be in contact with the first insulating member in the assembly hole.

10 . The display device according to claim 1 , wherein a width of the part of the blocking member overlaps 0.5 to 1 time a thickness of the first conductivity-type semiconductor layer of a light emitting device.

11 . The display device according to claim 1 , wherein a width of the part of the blocking member is greater than a length of the first metal layer of a light emitting device.

12 . The display device according to claim 1 , wherein the first conductivity-type semiconductor layer of a light emitting device is disposed on the first region of the assembly hole, and

wherein the second conductivity-type semiconductor layer of the light emitting device is disposed on the second region of the assembly hole.

13 . The display device according to claim 1 , wherein the blocking member comprises a metal material.

14 . The display device according to claim 1 , further comprising:

a first connection electrode connecting the first wiring line and the first metal layer of a light emitting device through a first contact hole; and

a second connection electrode connecting the second wiring line and the first conductivity-type semiconductor layer of the light emitting device through a second contact hole.

15 . The display device according to claim 1 , wherein a light emitting device comprises one of a plate light emitting device, a cylindrical light emitting device, a disk light emitting device, a micro light emitting device, a nano light emitting device, or a rod light emitting device.

16 . The display device according to claim 1 , wherein a thickness of the first metal layer is equal to or greater than a thickness of the blocking member.

17 . The display device according to claim 1 , further comprising a second metal layer on the second conductivity-type semiconductor layer.

18 . The display device according to claim 17 , wherein the second metal layer comprises a magnetic material.

19 . The display device according to claim 17 , wherein the first metal layer is configured to surround the second metal layer.

20 . The display device according to claim 17 , wherein a sum of thicknesses of the second conductivity-type semiconductor layer and the second metal layer is equal to a thickness of the first conductivity-type semiconductor layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: KIM, MYOUNGSOO; LEE, MINWOO; KIM, JUNGSUB; KIM, JUNGHOON
To: LG ELECTRONICS INC.
Reel/Frame 063857/0830 →
Continuity (1)
Related Publication 20230420618A1 · Dec 28, 2023
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