Highly integrated power electronics and methods of manufacturing the same
A method for manufacturing a power device fabrication panel includes aligning a first alignment mark in a lead frame of a power device substrate array with a second alignment mark in a bonding fixture. The power device substrate array includes a plurality of power device pockets, the bonding fixture includes a plurality of power device openings, and the power device openings are in assembly alignment with the power device pockets when the first alignment mark is aligned with the second alignment mark. And with the bonding fixture power device openings in assembly alignment with the power device pockets of the power device substrate array, a plurality of power devices are moved at least partially through the aligned power device openings and into the power device pockets where they are bonded.
1 . A method comprising:
aligning a first alignment mark in a lead frame of a power device substrate array comprising a plurality of power device pockets with a second alignment mark in a bonding fixture comprising a plurality of power device openings such that the power device openings are in assembly alignment with the power device pockets; and
assembling a plurality of power devices onto the power device substrate array by moving the plurality of power devices at least partially through the aligned power device openings and into the power device pockets.
2 . The method according to claim 1 , wherein the first alignment mark is an aperture extending through the lead frame.
3 . The method according to claim 2 , wherein the second alignment mark is an aperture extending through the bonding fixture.
4 . The method according to claim 3 further comprising inserting an alignment pin through the first alignment mark and the second alignment mark.
5 . The method according to claim 1 further comprising:
aligning the first alignment mark on the lead frame with a third alignment mark on a dielectric substrate comprising a plurality of substrate pockets such that the power device substrate array is in assembly alignment with the plurality of substrate pockets; and
assembling the power device substrate array onto the dielectric substrate by moving the power device substrate array into the substrate pockets.
6 . The method according to claim 5 , wherein the first alignment mark is an aperture extending through the lead frame.
7 . The method according to claim 6 , wherein the third alignment mark is an aperture extending through the dielectric substrate.
8 . The method according to claim 7 further comprising inserting an alignment pin through the first alignment mark and the third alignment mark.
9 . The method according to claim 5 , wherein the dielectric substrate is an FR4 substrate.
10 . The method according to claim 5 further comprising bonding the power device substrate array into the substrate pockets and forming a power device fabrication layer.
11 . The method according to claim 10 further comprising bonding the power device fabrication layer to a multi-layer printed circuit board (PCB) and forming an integrated power electronics (IPEs) embedded PCB fabrication panel.
12 . The method according to claim 11 further comprising bonding the IPEs embedded PCB fabrication panel to a cold plate fabrication panel and forming an IPEs embedded PCB-cold plate fabrication panel.
13 . The method according to claim 12 further comprising cutting the IPEs embedded PCB-cold plate fabrication panel into a plurality of individual highly IPEs embedded PCB-cold plate assemblies.
14 . A method comprising:
registering a first alignment mark in a lead frame of a power device substrate array comprising a plurality of power device substrates with a plurality of power device pockets, the first alignment mark comprising an aperture extending through the lead frame;
registering a second alignment mark on a bonding fixture comprising a plurality of power device openings, the second alignment mark comprising an aperture extending through the bonding fixture;
positioning the bonding fixture proximate to the power device substrate array and aligning the first alignment mark with the second alignment mark such that the plurality of power device openings in the bonding fixture are in assembly alignment with the plurality of power device pockets in the power device substrate array; and
assembling a plurality of power devices onto the power device substrate array by moving the plurality of power devices at least partially through the aligned power device openings and into the power device pockets.
15 . The method according to claim 14 further comprising:
aligning the first alignment mark on the lead frame with a third alignment mark on a dielectric substrate comprising a plurality of substrate pockets such that the power device substrate array is in assembly alignment with the substrate pockets, the third alignment mark comprising an aperture through the dielectric substrate; and
assembling the power device substrate array onto the dielectric substrate by moving the power device substrate array into the plurality of substrate pockets.
16 . The method according to claim 15 further comprising inserting an alignment pin through at least one of the first alignment mark and the third alignment mark, and the first alignment mark and the third alignment mark.
17 . The method according to claim 16 further comprising bonding the power device substrate array into the substrate pockets and forming a power device fabrication layer.
18 . The method according to claim 17 further comprising bonding the power device fabrication layer to a multi-layer printed circuit board (PCB) and forming an integrated power electronics (IPEs) embedded PCB fabrication panel, bonding the IPEs embedded PCB fabrication panel to a cold plate fabrication panel and forming an IPEs embedded PCB-cold plate fabrication panel, and cutting the IPEs embedded PCB-cold plate fabrication panel into a plurality of individual highly IPEs embedded PCB-cold plate assemblies.
19 . A method comprising:
registering a first alignment mark in a lead frame structure of a power device substrate array comprising a plurality of power device substrates with a plurality of power device pockets, the first alignment mark comprising an aperture extending through the lead frame structure;
registering a second alignment mark on a bonding fixture comprising a plurality of power device openings, the second alignment mark comprising an aperture extending through the bonding fixture;
positioning the bonding fixture proximate to the power device substrate array and aligning the first alignment mark with the second alignment mark such that the plurality of power device openings in the bonding fixture are in assembly alignment with the plurality of power device pockets in the power device substrate array;
assembling a plurality of power devices onto the power device substrate array by moving the plurality of power devices at least partially through the aligned power device openings and into the power device pockets; and
bonding the plurality of power devices into the power device pockets and forming a power device fabrication layer.
20 . The method according to claim 19 further comprising bonding the power device fabrication layer to a multi-layer printed circuit board (PCB) and forming an integrated power electronics (IPEs) embedded PCB fabrication panel, bonding the IPEs embedded PCB fabrication panel to a cold plate fabrication panel and forming an IPEs embedded PCB-cold plate fabrication panel, and cutting the IPEs embedded PCB-cold plate fabrication panel into a plurality of individual IPEs embedded PCB-cold plate assemblies.