IP Library › Granted Patent US 12,585,596
Granted Patent B2
US 12,585,596 · App. 18/895,502 · Granted Mar 24, 2026

Data padding device and data padding method

Inventors: Bing Zhang (Shanghai, CN); Rui He Wang (Shanghai, CN); Yu Jie Qiu (Shanghai, CN); Wei Zhu (Shanghai, CN)
Assignee: SIGMASTAR TECHNOLOGY LTD.
G06F12/122G06F13/28
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,585,596
App. No.
18/895,502
Granted
Mar 24, 2026
Kind
B2
Abstract

A data padding device includes an internal memory, a direct memory access (DMA) circuit and a data processing circuit. The DMA circuit performs, according to a first padding control signal, data padding in a first direction on raw data during a process of reading the raw data from an external memory to generate first-direction padding data, and stores the first-direction padding data to the internal memory, wherein the first-direction padding data includes the raw data and first padding data originated from the raw data. The data processing circuit performs, according to a second padding control signal, data padding in a second direction on the first-direction padding data during a process of reading the first-direction padding data from the internal memory to generate second-direction padding data, wherein the second-direction padding data includes the first-direction padding data and second padding data originated from the first-direction padding data.

Claims (20)

1 . A data padding device, comprising:

an internal memory;

a direct access memory (DMA) circuit, performing, according to a first padding control signal, data padding in a first direction on raw data during a process of reading the raw data from an external memory to generate first-direction padding data, and storing the first-direction padding data to the internal memory, wherein the first-direction padding data comprises the raw data and first padding data originated from the raw data;

a data processing circuit, performing, according to a second padding control signal, data padding in a second direction on the first-direction padding data during a process of reading the first-direction padding data from the internal memory to generate second-direction padding data, wherein the second-direction padding data comprises the first-direction padding data and second padding data originated from the first-direction padding data; and

a padding controller, generating the first padding control signal according to an enable signal, wherein the first padding control signal comprises a starting address and a data length;

wherein the DMA circuit reads the raw data from the starting address of the external memory, and continues reading in a first reading direction for the data length to obtain first data of the raw data, and the first padding data comprises the first data.

2 . The data padding device according to claim 1 , wherein the first padding control signal further comprises a stride, and the DMA circuit, after obtaining the first data, skips by the data length, the stride and the data length in a second reading direction opposite to the first reading direction to a target address, and continues reading from the target address for the data length in the first reading direction to obtain second data in the raw data, wherein the first padding data further comprises the second data.

3 . The data padding device according to claim 1 , wherein the data processing circuit comprises:

a padding controller, generating the second padding control signal according to an enable signal, the second padding control signal comprising a plurality of data addresses, the data addresses comprising at least one repeated data address, the padding controller further reading the first-direction padding data from the internal memory according to the data addresses to generate the second-direction padding data, wherein the first-direction padding data read from the internal memory according to the at least one repeated data address is the second padding data.

4 . The data padding device according to claim 1 , wherein the data processing circuit further comprises:

a data rewriter, performing data rewriting on the second padding data in a mirror symmetry manner.

5 . The data padding device according to claim 4 , wherein the data rewriter obtains a plurality of sets of first least significant bits (LSB) valid data of the first padding data used as the second padding data, inverts the first LSB valid data to obtain a plurality of sets of inverted first LSB valid data, and pads the inverted first LSB valid data to a location of the second-direction padding data.

6 . The data padding device according to claim 4 , wherein the data rewriter inverts the first padding data used as the second padding data to obtain inverted second padding data, obtains a plurality of sets of second LSB valid data of the inverted second padding data, and pads the second LSB valid data to the location of the second-direction padding data.

7 . A data padding method, adapted for a data padding device comprising an internal memory, a direct memory access (DMA) circuit and a data processing circuit, the data padding method implemented by a processor executing a plurality of instructions, the data padding method comprising:

controlling the DMA circuit to perform, according to a first padding control signal, data padding in a first direction on raw data during a process of reading the raw data from an external memory to generate first-direction padding data, and to store the first-direction padding data to the internal memory, wherein the first-direction padding data comprises the raw data and first padding data originated from the raw data; and

controlling the data processing circuit to perform, according to a second padding control signal, data padding in a second direction on the first-direction padding data during a process of reading the first-direction padding data from an internal memory to generate second-direction padding data, wherein the second-direction padding data comprises the first-direction padding data and second padding data originated from the first-direction padding data,

wherein the data padding device further comprises a padding controller, and the controlling of the DMA circuit to perform, according to the first padding control signal, data padding in the first direction on the raw data during the process of reading the raw data from the external memory to generate the first-direction padding data comprises:

controlling the padding controller to generate the first padding control signal according to an enable signal, wherein the first padding control signal at least comprises a starting address and a data length; and

controlling the DMA circuit to read the raw data from the starting address of the external memory, and to continue reading for the data length to obtain first data of the raw data, wherein the first padding data comprises the first data.

8 . The data padding method according to claim 7 , wherein the first padding control signal further comprises a stride, and wherein the data padding method, after controlling the DMA circuit by the processor to obtain the first data, further comprises controlling the DMA circuit to skip by the data length, the stride and the data length in a second reading direction opposite to the first reading direction to a target address, and to continue reading from the target address for the data length in the first reading direction to obtain second data in the raw data, wherein the first padding data further comprises the second data.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2024
From: ZHANG, BING; WANG, RUI HE; QIU, YU JIE; ZHU, WEI
To: SIGMASTAR TECHNOLOGY LTD.
Reel/Frame 068703/0419 →
Priority Claims (1)
CN 202311675513.8 · Dec 6, 2023 · national
Continuity (1)
Related Publication 20250190365A1 · Jun 12, 2025
References Cited (2)
US 11500802B1 · Xu · 2022 [cited by examiner]
US 20110202695A1 · Nandan · 2011 [cited by examiner]