Semiconductor laser device
This semiconductor laser device comprises: a semiconductor laser element; a switching element connected in series to the semiconductor laser element, the switching element having a gate electrode, a drain electrode, and a source electrode; capacitors connected in parallel to the semiconductor laser element and the switching element; first drive electroconductive parts to which first terminals of the capacitors are connected; a second drive electroconductive part positioned apart from the first drive electroconductive parts; first drive connection members that connect the first drive electroconductive parts and the source electrode; and a second drive connection member that connects the second drive electroconductive part and the source electrode.
1 . A semiconductor laser device, comprising:
a semiconductor laser element:
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode; and
a second drive connection member connecting the second drive conductor and the second drive electrode;
a terminal conductor configured to be a terminal of the semiconductor laser device, wherein
the terminal conductor includes:
a first terminal conductor configured to be connected to a negative electrode of a power supply, the power supply being configured to supply power to the semiconductor laser device, and
a second terminal conductor configured to be connected to an input electrode of a driver circuit, the driver circuit being configured to apply a voltage to the control electrode of the switching element,
the first drive conductor is electrically connected to the first terminal conductor, and
the second drive conductor is electrically connected to the second terminal conductor.
2 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode; and
a second drive connection member connecting the second drive conductor and the second drive electrode; wherein
the semiconductor laser element, the switching element, and the second drive conductor are arranged in order in a predetermined first direction in a plan view of the semiconductor laser device, and
the first drive conductor and the switching element are arranged in order in a second direction that is orthogonal to the first direction in the plan view.
3 . The semiconductor laser device according to claim 2 , wherein the second drive conductor and the semiconductor laser element are located at opposite sides of the switching element in the first direction.
4 . The semiconductor laser device according to claim 2 , wherein the semiconductor laser element is located in a center in the second direction.
5 . The semiconductor laser device according to claim 2 , wherein the capacitor is located closer to the semiconductor laser element than the switching element in the first direction.
6 . The semiconductor laser device according to claim 2 , wherein the capacitor includes multiple capacitors.
7 . The semiconductor laser device according to claim 2 , wherein
the capacitor includes multiple capacitors located at opposite sides of the switching element in the second direction, and
the first drive conductors are located at opposite sides of the switching element in the second direction.
8 . The semiconductor laser device according to claim 2 , wherein the semiconductor laser element includes multiple semiconductor laser elements arranged in order in the second direction.
9 . The semiconductor laser device according to claim 8 , wherein adjacent ones of the semiconductor laser elements in the second direction have electrodes electrically connected to each other by an element connection member.
10 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode; and
a second drive connection member connecting the second drive conductor and the second drive electrode; wherein
the semiconductor laser element includes semiconductor light emitting layers arranged in order in the second direction, and
the semiconductor light emitting layers are connected to each other by a single electrode.
11 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode;
a second drive connection member connecting the second drive conductor and the second drive electrode; and
a third drive conductor connected to the first drive electrode of the switching element, wherein the semiconductor laser element is connected to the third drive conductor.
12 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode;
a second drive connection member connecting the second drive conductor and the second drive electrode; and
a fourth drive conductor connected to a second terminal of the capacitor, wherein
the semiconductor laser element, the switching element, and the second drive conductor are arranged in order in a predetermined first direction in a plan view of the semiconductor laser device, and
the fourth drive conductor and the first drive conductor are arranged in order in the first direction.
13 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode;
a second drive connection member connecting the second drive conductor and the second drive electrode;
a control conductor located separate from the first drive conductor and the second drive conductor and configured to be electrically connected to the control electrode; and
a control connection member configured to connect the control electrode and the control conductor,
wherein the control connection member and the second drive connection member are located adjacent to each other.
14 . The semiconductor laser device according to claim 13 , wherein the control conductor and the second drive conductor are located adjacent to each other.
15 . A semiconductor laser device, comprising:
a semiconductor laser element;
a switching element connected in series to the semiconductor laser element, the switching element including:
a control electrode,
a first drive electrode, and
a second drive electrode,
the switching element controlling a current flowing to the semiconductor laser element in accordance with a voltage applied to the control electrode;
a capacitor configured to be connected in parallel to the semiconductor laser element and the switching element;
a first drive conductor connected to a first terminal of the capacitor;
a second drive conductor located separate from the first drive conductor;
a first drive connection member connecting the first drive conductor and the second drive electrode;
a second drive connection member connecting the second drive conductor and the second drive electrode; and
a support substrate including a substrate main surface and a substrate back surface that face in opposite directions in a direction perpendicular to the substrate main surface, wherein
at least the first drive conductor is formed on the substrate main surface, and
a terminal conductor configured to be a terminal of the semiconductor laser device is formed on the substrate back surface.
16 . The semiconductor laser device according to claim 15 , wherein
the terminal conductor includes a first terminal conductor, a second terminal conductor, and a third terminal conductor,
the first terminal conductor is configured to be connected to a negative electrode of a power supply configured to supply power to the semiconductor laser device,
the second terminal conductor is configured to be connected to an input electrode of a driver circuit configured to apply a voltage to the control electrode of the switching element,
the third terminal conductor is configured to be connected to the first drive electrode of the switching element, and
the first terminal conductor is located separate from the third terminal conductor.
17 . The semiconductor laser device according to claim 16 , further comprising a third drive conductor connected to the first drive electrode of the switching element, wherein
the terminal conductor includes a third terminal conductor electrically connected to the third drive conductor, and
the first terminal conductor and the third terminal conductor are integrated with each other.
18 . The semiconductor laser device according to claim 15 , further comprising a joint configured to electrically connect the first drive conductor and the second drive conductor to the terminal conductor.
19 . The semiconductor laser device according to claim 1 , further comprising:
a sealing member sealing the semiconductor laser element, the switching element, the capacitor, the first drive conductor, the second drive conductor, the first drive connection member, and the second drive connection member,
wherein the sealing member includes a portion transmissive to a laser beam from the semiconductor laser element.