IP Library › Granted Patent US 12,587,760
Granted Patent B2
US 12,587,760 · App. 18/110,038 · Granted Mar 24, 2026

Image sensor including an auto focusing (AF) pixel

Inventor: Eun Sub Shim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H04N25/704H04N25/772H04N25/79
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Quick Facts
Patent No.
US 12,587,760
App. No.
18/110,038
Granted
Mar 24, 2026
Kind
B2
Abstract

An image sensor includes; a pixel array including at an auto focusing (AF) pixel and an AF adjacent pixel, which is adjacent to the AF pixel and is configured to share a floating diffusion region with the AF pixel; and a row driver configured to control the pixel array, wherein a first end of a photo diode included in the AF pixel is connected to a first transmission transistor, and a second end of the photo diode included in the AF pixel is connected to a ground through a first signal line, and wherein a first end of a photo diode included in the AF adjacent pixel is connected to a second transmission transistor, and a second end of the photo diode included in the AF adjacent pixel is connected to the row driver through a second signal line.

Claims (27)

1 . An image sensor, comprising:

a pixel array including an auto focusing (AF) pixel and an AF adjacent pixel, which is adjacent to the AF pixel and is configured to share a floating diffusion region with the AF pixel; and

a row driver configured to control the pixel array,

wherein a first end of a photo diode included in the AF pixel is connected to a first transmission transistor, and a second end of the photo diode included in the AF pixel is connected to a ground through a first signal line, and

wherein a first end of a photo diode included in the AF adjacent pixel is connected to a second transmission transistor, and a second end of the photo diode included in the AF adjacent pixel is connected to the row driver through a second signal line.

2 . The image sensor of claim 1 , wherein the row driver provides a high level voltage to the photo diode included in the AF adjacent pixel through the second signal line.

3 . The image sensor of claim 2 , wherein charges generated from the photo diode included in the AF adjacent pixel are drained toward the row driver.

4 . The image sensor of claim 1 , wherein the pixel array includes:

a plurality of pixel groups configured to generate an image signal; and

a plurality of AF pixel groups disposed between the plurality of pixel groups and configured to generate a phase signal,

wherein at least one of the plurality of AF pixel groups includes:

an AF pixel configured to generate a phase signal; and

a first AF adjacent pixel disposed adjacent to the AF pixel in a first direction, and

wherein a first end of a first photo diode included in the first AF adjacent pixel is connected to the row driver through the second signal line.

5 . The image sensor of claim 4 , wherein the at least one of the plurality of AF pixel groups further includes:

a second AF adjacent pixel disposed adjacent to the AF pixel in a second direction different from the first direction; and

a third AF adjacent pixel disposed adjacent to the AF pixel in a third direction different from the first and second directions, and

wherein a first end of a second photo diode included in the second AF adjacent pixel and a first end of a third photo diode included in the third AF adjacent pixel are connected to the row driver through the second signal line.

6 . The image sensor of claim 5 , wherein a first transmission transistor included in the first AF adjacent pixel, a second transmission transistor included in the second AF adjacent pixel, a third transmission transistor included in the third AF adjacent pixel, and a fourth transmission transistor included in the AF pixel are sequentially turned on while a ground level voltage is provided through the second signal line.

7 . The image sensor of claim 5 , wherein a first transmission transistor included in the first AF adjacent pixel, a second transmission transistor included in the second AF adjacent pixel, a third transmission transistor included in the third AF adjacent pixel, and a fourth transmission transistor included in the AF pixel are simultaneously turned on while a high level voltage is provided through the second signal line.

8 . The image sensor of claim 1 , wherein the pixel array includes a plurality of AF pixel groups,

wherein each of the plurality of AF pixel groups includes:

an AF pixel configured to generate a first phase signal for a first direction; and

an AF adjacent pixel disposed adjacent to the AF pixel and configured to generate a second phase signal for the first direction, and

wherein a first end of a photo diode included in the AF adjacent pixel is connected to the row driver through the second signal line.

9 . The image sensor of claim 8 , wherein a first transmission transistor included in the AF pixel and a second transmission transistor included in the AF adjacent pixel are sequentially turned on while a ground level voltage is provided through the second signal line.

10 . The image sensor of claim 8 , wherein a first transmission transistor included in the AF pixel and a second transmission transistor included in the AF adjacent pixel are simultaneously turned on while a high level voltage is provided through the second signal line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2023
From: SHIM, EUN SUB
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 062707/0166 →
Priority Claims (1)
KR 10-2022-0086053 · Jul 13, 2022 · national
Continuity (1)
Related Publication 20240022832A1 · Jan 18, 2024
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