Light-emitting device, manufacturing method therefor, and display apparatus
A light-emitting device includes: a light-emitting device core including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; an electrode layer on the second semiconductor layer of the light-emitting device core, and an insulating film around a side surface of the light-emitting device core, wherein a side surface of the electrode layer protrudes outward from a side surface of the second semiconductor layer.
1 . A light-emitting device comprising:
a light-emitting device core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;
an electrode layer on the second semiconductor layer of the light-emitting device core; and
an insulating film around a side surface of the light-emitting device core,
wherein a side surface of the electrode layer protrudes outwardly from a side surface of the second semiconductor layer, and
wherein a minimum diameter of the second semiconductor layer is greater than a maximum diameter of the first semiconductor layer.
2 . The light-emitting device of claim 1 , wherein one surface of the electrode layer toward the second semiconductor layer comprises a first region overlapping the second semiconductor layer and a second region that does not overlap the second semiconductor layer, and
wherein the insulating film is on the second region.
3 . The light-emitting device of claim 2 , wherein the insulating film exposes at least a portion of the side surface of the electrode layer.
4 . The light-emitting device of claim 3 , wherein the insulating film is not on the side surface of the electrode layer.
5 . The light-emitting device of claim 4 , wherein a diameter of an outer surface of the insulating film on the one surface of the electrode layer is same as a diameter of the one surface of the electrode layer.
6 . The light-emitting device of claim 2 , wherein the second region is around the first region.
7 . The light-emitting device of claim 6 , wherein an area of the first region is greater than an area of the second region.
8 . The light-emitting device of claim 2 , wherein an outer surface of the insulating film in a region adjacent to the second region is aligned with the side surface of the electrode layer.
9 . The light-emitting device of claim 1 , wherein a diameter of the second semiconductor layer decreases from the electrode layer toward the active layer.
10 . The light-emitting device of claim 9 , wherein a diameter of the active layer decreases from the second semiconductor layer toward the first semiconductor layer.
11 . The light-emitting device of claim 10 , wherein the maximum diameter of the first semiconductor layer is smaller or equal to a minimum diameter of the active layer.
12 . The light-emitting device of claim 3 , wherein a first thickness of the insulating film on the second region is different from a second thickness of the insulating film on the side surface of the electrode layer.
13 . The light-emitting device of claim 12 , wherein the first thickness is greater than the second thickness.
14 . The light-emitting device of claim 1 , wherein the insulating film has a thickness in a range of 20 nm to 100 nm, and
wherein a protrusion length of the side surface of the electrode layer protruding from the second semiconductor layer in a thickness direction of the insulating film is in a range of about 20 nm to about 120 nm.
15 . A manufacturing method for a light-emitting device, the method comprising:
forming a light-emitting device core and an electrode layer on a substrate, the electrode layer being on the light-emitting device core; and
forming an insulating film around a side surface of the light-emitting device core,
wherein the forming of the light-emitting device core and the electrode layer comprises forming the electrode layer having a side surface that protrudes outwardly from the side surface of the light-emitting device core,
wherein the light-emitting device core comprises:
a first semiconductor layer on the substrate;
a second semiconductor layer between the first semiconductor layer and the electrode layer; and
an active layer between the first semiconductor layer and the second semiconductor layer,
wherein one surface of the electrode layer adjacent the second semiconductor layer includes a first region overlapping the second semiconductor layer and a second region that does not overlap the second semiconductor layer,
wherein the insulating film is on the second region, and
wherein a minimum diameter of the second semiconductor layer is greater than a maximum diameter of the first semiconductor layer.
16 . The manufacturing method for the light-emitting device of claim 15 , wherein the insulating film exposes at least a portion of the side surface of the electrode layer.
17 . The manufacturing method for the light-emitting device of claim 15 , wherein the forming of the insulating film comprises:
forming an insulating coating covering outer surfaces of the light-emitting device core and the electrode layer; and
exposing another surface of the electrode layer opposite to the one surface of the electrode layer and at least a portion of the side surface of the electrode layer by removing a portion of the insulating coating.
18 . The manufacturing method for the light-emitting device of claim 16 , wherein a diameter of the second semiconductor layer decreases from the electrode layer toward the active layer, and
wherein a diameter of the active layer decreases from the second semiconductor layer toward the first semiconductor layer.
19 . A display apparatus comprising:
a substrate;
a first electrode on the substrate;
a second electrode on the substrate and spaced from the first electrode; and
a light-emitting device between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode,
wherein the light-emitting device comprises:
a light-emitting device core comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;
an electrode layer on the second semiconductor layer of the light-emitting device core; and
an insulating film around a side surface of the light-emitting device core,
wherein a side surface of the electrode layer protrudes outwardly from a side surface of the second semiconductor layer, and
wherein a minimum diameter of the second semiconductor layer is greater than a maximum diameter of the first semiconductor layer.
20 . The display apparatus of claim 19 , wherein one surface of the electrode layer toward the second semiconductor layer has a first region overlapping the second semiconductor layer and a second region that does not overlap the second semiconductor layer, and
wherein the insulating film is on the second region.
21 . The display apparatus of claim 20 , wherein the insulating film exposes at least a portion of the side surface of the electrode layer.
22 . The display apparatus of claim 20 , further comprising:
a first contact electrode on the first electrode and one end of the light-emitting device; and
a second contact electrode on the second electrode and another end of the light-emitting device,
wherein the first contact electrode and the second contact electrode are electrically insulated from each other.
23 . The display apparatus of claim 22 , wherein the first contact electrode is on another surface of the electrode layer opposite to the one surface of the electrode layer and a portion of the side surface of the electrode layer.
24 . The display apparatus of claim 23 , wherein the second region includes a third region that does not overlap the insulating film, and
wherein the first contact electrode is further on the third region.