Metal nitride core-shell particle die-attach material
Die attach materials are provided. In one example, the die-attach material includes a plurality of core-shell particles. Each core-shell particle includes a core and a shell on the core. The core includes a conducting material. The shell includes a metal nitride.
1 . A die-attach material, comprising:
a plurality of core-shell particles, each core-shell particle comprising a core and a shell on the core;
wherein the core comprises a conducting material; and
wherein the shell comprises a copper nitride.
2 . The die-attach material of claim 1 , wherein the metal copper nitride reduces oxidation of the core.
3 . The die-attach material of claim 1 , wherein the die-attach material is an ink.
4 . The die-attach material of claim 1 , wherein the die-attach material is a paste.
5 . The die-attach material of claim 1 , wherein the metal copper nitride decomposes into a metal and a nitrogen gas during bonding of the die-attach material.
6 . The die-attach material of claim 1 , wherein the conducting material of the core comprises copper.
7 . The die-attach material of claim 1 , wherein the plurality of core-shell particles are dispersed in a solution.
8 . The die-attach material of claim 7 , wherein the solution comprises ethylene glycol.
9 . The die-attach material of claim 1 , wherein the plurality of core-shell particles are grafted to a polymer matrix.
10 . The die-attach material of claim 1 , wherein the core has a size of about 1 μm or less.
11 . The die-attach material of claim 1 , wherein the core has a size of in a range of about 1 μm to about 50 μm.
12 . The die-attach material of claim 1 , wherein the shell has a thickness in a range of about 50 nm to about 100 nm.
13 . A die-attach material, comprising:
a plurality of core-shell particles, each core-shell particle comprising a core and a shell on the core;
wherein the core comprises copper and the shell comprises copper nitride; and
wherein the die-attach material is an ink or a paste.
14 . A device, comprising:
a semiconductor die comprising a wide band gap semiconductor material;
a substrate; and
a die-attach material between the semiconductor die and the substrate, the die-attach material comprising a plurality of bonded conductive particles and a metal nitride.
15 . The device of claim 14 , wherein the plurality of bonded conductive particles comprise a plurality of bonded copper particles.
16 . The device of claim 14 , wherein the metal nitride comprises a copper nitride.
17 . The device of claim 14 , wherein the semiconductor die comprises silicon carbide.
18 . The device of claim 14 , wherein the semiconductor die comprises a Group III-nitride.
19 . The device of claim 14 , wherein the metal nitride is interspersed between the plurality of bonded conductive particles.