Tunnel magnetoresistance element to detect out-of-plane changes in a magnetic field intensity of a magnetic field
In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a −z direction.
1 . A method comprising:
manufacturing a tunnel magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field, the manufacturing comprising:
depositing antiferromagnetic material on a seed layer, the antiferromagnetic material comprising a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction, a top layer of the plurality of antiferromagnetic layers having a magnetization direction in the first direction;
depositing a ferromagnetic layer directly on the top layer of the plurality of antiferromagnetic layers;
depositing a first multilayer structure directly on the ferromagnetic layer;
depositing a metal layer directly on the first multilayer structure; and
depositing a second multilayer structure directly on the metal layer,
wherein the ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane,
wherein the first direction is either in a z-direction or in a −z direction,
wherein a magnetization direction of the second multilayer structure is in the second direction and is determined by and is opposite of the magnetization direction of the top layer of the plurality of antiferromagnetic layer, and
wherein the magnetization direction of the second multilayer structure is a reference direction of the TMR element.
2 . The method of claim 1 , wherein the ferromagnetic layer is a first magnetic layer, and further comprising:
depositing a second ferromagnetic layer on the second multilayer structure;
depositing an insulator layer directly on the second ferromagnetic layer; and
depositing a free layer on the insulator layer.
3 . The method of claim 2 , wherein a magnetization direction of the free layer lies within the x-y plane.
4 . The method of claim 2 , further comprising depositing a striped domain structure on the free layer.
5 . The method of claim 4 , wherein depositing the striped domain structure on the free layer comprises depositing the striped domain structure comprising one or more sublayers.
6 . The method of claim 5 , wherein each sublayer comprises at least one heavy metal and at least one ferromagnetic material.
7 . The method of claim 5 , wherein each sublayer comprises at least one oxide layer and at least one ferromagnetic layer.
8 . The method of claim 7 , wherein each sublayer further comprises at least one heavy metal.
9 . The method of claim 5 , wherein each sublayer further comprises a buffer layer.
10 . The method of claim 2 , wherein the metal layer is a first metal layer, and further comprising depositing a second metal layer on the second multilayer structure before depositing the second ferromagnetic layer.
11 . The method of claim 1 , wherein a magnetization direction of the first multilayer structure is in the first direction and is determined by the magnetization direction of the top layer of the plurality of antiferromagnetic layers.
12 . The method of claim 11 , wherein the magnetization direction of the top layer of the plurality of antiferromagnetic layers is formed using a laser or with a current pulse through the TMR element.
13 . The method of claim 1 , wherein depositing the first multilayer structure comprises depositing sublayers, and
wherein each sublayer comprises a first heavy metal layer and a first ferromagnetic material layer.
14 . The method of claim 13 , wherein depositing the second multilayer structure comprises depositing sublayers, and
wherein each sublayer comprises a second heavy metal layer and a second ferromagnetic material layer.
15 . The method of claim 14 , wherein a total number of sublayers of the first multilayer structure is not equal to a total number of sublayers of the second multilayer structure.
16 . The method of claim 14 , wherein a total number of sublayers of the first multilayer structure is equal to a total number of sublayers of the second multilayer structure.
17 . The method of claim 14 , wherein the first heavy metal layer and/or the second heavy metal layer is a platinum layer, and the first ferromagnetic material layer and/or the second ferromagnetic material layer comprises a cobalt element.
18 . The method of claim 1 , where depositing the antiferromagnetic material comprises depositing iridium manganese, platinum manganese or iron manganese.
19 . A tunnel magnetoresistance (TMR) element comprising:
antiferromagnetic material comprising a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction, a top layer of the plurality of antiferromagnetic layers having a magnetization direction in the first direction;
a ferromagnetic layer in direct contact with the top layer of the plurality of antiferromagnetic layers;
a first multilayer structure in direct contact with the ferromagnetic layer;
a metal layer in direct contact with the first multilayer structure; and
a second multilayer structure in direct contact with the metal layer, wherein the second multilayer structure is part of a reference layer,
wherein the ferromagnetic layer, the first multilayer structure and the second multilayer structure are each parallel to an x-y plane,
wherein the first direction is either in a z-direction or in a −z direction,
wherein a magnetization direction of the second multilayer structure is in the second direction and is determined by and is opposite of the magnetization direction of the top layer of the plurality of antiferromagnetic layer, and
wherein the magnetization direction of the second multilayer structure is a reference direction of the TMR element.
20 . The TMR element of claim 19 , wherein the ferromagnetic layer is a first magnetic layer, and further comprising:
a second ferromagnetic layer on the second multilayer structure; and
an insulator layer in direct contact with the second ferromagnetic layer;
a free layer on the insulator layer.
21 . The TMR element of claim 20 , wherein a magnetization direction of the free layer lies within the x-y plane.
22 . The TMR element of claim 20 , further comprising a striped domain structure on the free layer.
23 . The TMR element of claim 22 , wherein the striped domain structure comprises one or more sublayers.
24 . The TMR element of claim 23 , wherein each sublayer comprises at least one heavy metal and at least one ferromagnetic material.
25 . The TMR element of claim 23 , wherein each sublayer comprises at least one oxide layer and at least one ferromagnetic layer.
26 . The TMR element of claim 25 , wherein each sublayer further comprises at least one heavy metal.
27 . The TMR element of claim 23 , wherein each sublayer comprises a buffer layer.
28 . The TMR element of claim 20 , wherein the metal layer is a first metal layer, and further comprising a second metal layer between the second ferromagnetic layer and the second multilayer structure.
29 . The TMR element of claim 19 , wherein a magnetization direction of the first multilayer structure is in the first direction and is determined by the magnetization direction of the top layer of the plurality of antiferromagnetic layers.
30 . The TMR element of claim 19 , wherein the first multilayer structure comprises sublayers, wherein each sublayer comprises a first heavy metal layer and a first ferromagnetic material layer.
31 . The TMR element of claim 30 , wherein the second multilayer structure comprises sublayers, wherein each sublayer comprises a second heavy metal layer and a second ferromagnetic material layer.
32 . The TMR element of claim 31 , wherein the first heavy metal layer and/or the second heavy metal layer is a platinum layer and the first ferromagnetic material layer and/or the second ferromagnetic material layer comprises a cobalt element.
33 . The TMR element of claim 31 , wherein a total number of sublayers of the first multilayer structure is not equal to a total number of sublayers of the second multilayer structure.
34 . The TMR element of claim 31 , wherein a total number of sublayers of the first multilayer structure is equal to a total number of sublayers of the second multilayer structure.
35 . The TMR element of claim 19 , where the antiferromagnetic material comprises iridium manganese, platinum manganese or iron manganese.
36 . A magnetic field sensor comprising:
a bridge comprising:
a source;
a first leg comprising:
a first tunnel magnetoresistance (TMR) element; and
a second TMR element electrically in series with the first TMR element and electrically closer to the source than the first TMR element; and
a second leg comprising:
a third TMR element; and
a fourth TMR element electrically in series with the third TMR element and electrically closer to the source than the third TMR element,
wherein the first TMR element, the second TMR element, the third TMR element and the fourth TMR elements each comprises:
antiferromagnetic material comprising a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction, a top layer of the plurality of antiferromagnetic layers having a magnetization direction in the first direction;
a ferromagnetic layer in direct contact with the top layer of the plurality of antiferromagnetic layers;
a first multilayer structure in direct contact with the ferromagnetic layer;
a metal layer in direct contact with the first multilayer structure; and
a second multilayer structure in direct contact with the metal layer, wherein the second multilayer structure is part of a reference layer,
wherein the ferromagnetic layer, the first multilayer structure and the second multilayer structure are each parallel to an x-y plane,
wherein the first direction is either in a z-direction or in a −z direction,
wherein a magnetization direction of the second multilayer structure is in the second direction and is determined by and is opposite of the magnetization direction of the top layer of the plurality of antiferromagnetic layer,
wherein the magnetization direction of the second multilayer structure is a reference direction of the TMR element, and
wherein the first TMR element and the fourth TMR element each have a reference direction in the z-direction, and
wherein the second TMR element and the third TMR element each have a reference direction in the −z-direction.