Tapered bi-layer near field transducer for heat-assisted magnetic recording write heads
The present embodiments relate to a heat-assisted magnetic recording (HAMR) write head with a NFT bi-layer structure with a bottom taper, which can be applied to one or both layers of the two layers. A heat-assisted magnetic recording (HAMR) write head can include a main pole including a tip portion configured to interact with a magnetic recording medium at an air-bearing surface (ABS). The HAMR write head can further include a near-field transducer (NFT) that includes a dielectric waveguide, a plasmon generator (PG) layer, and a second layer. The second layer can include a thermo-mechanically stable material disposed adjacent to the PG layer. Further, the PG layer and the second layer can form a taper angle relative to the ABS ranging between 30 and 60 degrees.
1 . A method for manufacturing a heat-assisted magnetic recording (HAMR) write head, the method comprising:
forming a near-field transducer (NFT) by:
providing an alumina layer adjacent to a dielectric waveguide;
depositing a plasmon generator (PG) layer over the alumina layer that is disposed adjacent to a dielectric waveguide; and
depositing a second layer over both the PG layer and the alumina layer such that a bottom surface of the second layer contacts both the PG layer and the alumina layer, wherein a length of the second layer is greater than a length of the PG layer; and
depositing a main pole adjacent to a heat sink.
2 . The method of claim 1 , wherein the PG layer comprises gold, and wherein the PG layer and the second layer form a taper angle relative to an air-bearing surface (ABS) ranging between 30 and 60 degrees.
3 . The method of claim 1 , wherein the second layer comprises a thermo-mechanically stable material that includes any of Rhodium, Iridium, and platinum.
4 . The method of claim 1 , further comprising:
depositing the alumina layer over the dielectric waveguide;
adding a first photo-resist (PR) mask over a portion of the alumina layer;
performing an ion beam etching (IBE) process to remove another portion of the alumina layer not covered by the first PR mask; and
removing the first PR mask.
5 . The method of claim 4 , further comprising:
removing a portion of the PG layer via an etching process;
adding a second PR mask over the second layer;
performing the etching process to remove parts of the second layer, PG layer, and the alumina layer not over the second PR mask; and
removing the second PR mask.
6 . The method of claim 5 , further comprising:
depositing a silicon dioxide (SiO 2 ) layer over the second layer, PG layer, and the alumina layer;
coating a third PR mask over the SiO 2 layer; and
performing an reactive-ion etching (RIE) process to remove a portion of the SiO 2 layer not under the third PR mask.
7 . The method of claim 1 , further comprising:
depositing a RIE stopper layer between the alumina layer and the PG layer; and
performing a RIE process to taper the PG layer and the second layer.
8 . A method comprising:
disposing an alumina layer over the dielectric waveguide;
depositing a plasmon generator (PG) layer over the alumina layer that is disposed adjacent to a dielectric waveguide; and
depositing a second layer over both the PG layer and the alumina layer such that a bottom surface of the second layer contacts both the PG layer and the alumina layer, wherein a length of the second layer is greater than a length of the PG layer.
9 . The method of claim 8 , wherein the second layer comprises thermo-mechanically stable material comprising any of: Rhodium, Iridium, and Platinum, and wherein any of the PG layer and the second layer form a taper angle relative to an air-bearing surface (ABS) ranging between 30 and 60 degrees.
10 . The method of claim 8 , wherein the second layer comprises a peg region adjacent to the ABS with a thickness of the peg region of around 25 nanometers.
11 . The method of claim 8 , further comprising:
adding a first photo-resist (PR) mask over a portion of the alumina layer;
performing an ion beam etching (IBE) process to remove another portion of the alumina layer not covered by the first PR mask; and
removing the first PR mask.
12 . The method of claim 8 , further comprising:
removing a portion of the PG layer via an etching process;
depositing the second layer over the alumina layer and a remaining portion of the PG layer;
adding a second PR mask over the second layer;
performing the etching process to remove parts of the second layer, PG layer, and the alumina layer not over the second PR mask; and
removing the second PR mask.
13 . The method of claim 8 , further comprising:
depositing a silicon dioxide (SiO 2 ) layer over the second layer, PG layer, and the alumina layer;
coating a third PR mask over the SiO 2 layer;
performing an reactive-ion etching (RIE) process to remove a portion of the SiO 2 layer not under the third PR mask;
depositing a heat sink; and
depositing a main pole.