Vertical-cavity surface-emitting laser (VCSEL) having separate electrical and optical confinement
Vertical-cavity surface-emitting lasers (VCSELs) and associated methods of manufacturing are provided. An example VCSEL includes a first reflector, a second reflector, and an active region disposed between the first reflector and the second reflector. The VCSEL further includes an electrical aperture defining a current confinement region configured to direct current to the active region and an optical aperture defining a medium through which light produced by the active region is emitted from the VCSEL. At least one dimension of the optical aperture of the VCSEL is formed independent of the electrical aperture of the VCSEL. In some instances, the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture.
1 . A vertical-cavity surface-emitting laser (VCSEL) comprising:
a first reflector;
a second reflector;
an active region disposed between the first reflector and the second reflector;
a current confinement region defining an electrical aperture configured to direct current to the active region; and
an optical aperture disposed between the first reflector and the second reflector defining a medium through which light produced by the active region is emitted from the VCSEL,
wherein at least one dimension of the optical aperture is formed independent of the electrical aperture of the current confinement region.
2 . The VCSEL of claim 1 , wherein the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture of the current confinement region.
3 . The VCSEL of claim 2 , wherein the second diameter of the electrical aperture is greater than the first diameter of the optical aperture.
4 . The VCSEL of claim 2 , wherein the electrical aperture and the optical aperture each define respective circular cross-sectional shapes.
5 . The VCSEL of claim 4 , wherein an emission path of the optical aperture defining a direction at which light is emitted by the VCSEL and a central axis that intersects a center of the electrical aperture are not collinear.
6 . The VCSEL of claim 4 , wherein the electrical aperture and the optical aperture are nonconcentric.
7 . The VCSEL of claim 1 , wherein the optical aperture defines a first cross-sectional shape that is different than a second cross-sectional shape defined by the electrical aperture.
8 . The VCSEL of claim 1 , further comprising a plurality of optical apertures including the optical aperture, wherein the plurality of optical apertures are associated with the electrical aperture.
9 . The VCSEL of claim 1 , wherein the VCSEL is formed via an interrupted growth procedure.
10 . The VCSEL of claim 1 , wherein the electrical aperture is defined via an ion implantation procedure.
11 . The VCSEL of claim 1 , wherein the optical aperture is defined via a photolithography process.
12 . The VCSEL of claim 1 , wherein the first reflector and the second reflector each comprise distributed Bragg reflector (DBR) stacks.
13 . The VCSEL of claim 1 , wherein the active region further comprises a multi-quantum well (MQW) layer stack comprising a series of quantum wells disposed between a series of barriers.
14 . The VCSEL of claim 1 , wherein the electrical aperture is disposed between the first reflector and the second reflector.
15 . A method of manufacturing a VCSEL, the method comprising:
forming a first reflector on a substrate;
creating, on top of the first reflector, an active region;
forming a second reflector on top of the active region;
interrupting formation of the second reflector;
forming a current confinement region defining an electrical aperture configured to direct current to the active region;
forming an optical aperture disposed between the first reflector and the second reflector through which light produced in the active region is emitted from the VCSEL, wherein at least one dimension of the optical aperture is formed independent of the electrical aperture of the current confinement region; and
resuming formation of the second reflector.
16 . The method of claim 15 , wherein the dimension of the optical aperture is a first diameter that is formed independent of a second diameter defined by the electrical aperture.
17 . The method of claim 16 , wherein the second diameter of the electrical aperture is greater than the first diameter of the optical aperture.
18 . The method of claim 15 , wherein the electrical aperture and the optical aperture each define respective circular cross-sectional shapes that are nonconcentric.
19 . The method of claim 15 , wherein the optical aperture of the VCSEL is formed in the absence of an oxidation feature provided in forming the second reflector.
20 . The method of claim 15 , further comprising forming the electrical aperture via an ion implantation procedure.
21 . The method of claim 15 , further comprising forming the optical aperture via a photolithography process.